Substrate support assembly and substrate processing device including the same
A substrate support assembly arranged in a chamber includes: a support plate including a first surface on which a substrate is seated; a driver configured to tilt the support plate such that the first surface is inclined with respect to a reference surface by a lower inclination angle; and a controller configured to control the driver such that the lower inclination angle is adjusted based on an upper inclination angle formed by the inclination of the gas supplier coupled to the upper surface of the chamber with respect to the reference surface.
1. A plasma generation device, comprising:
a plurality of high-frequency power sources configured to supply power to a plurality of plasma generators, respectively; and
a plurality of matchers installed between the plurality of high-frequency power sources and the plurality of plasma generators, and configured to respectively match load impedances of the plasma generators with output impedances of the high-frequency power sources, wherein at least one high-frequency power source of the plurality of high- frequency power sources comprises:
a high-frequency oscillator configured to oscillate a high-frequency;
a directional coupler disposed at a subsequent stage of the high-frequency oscillator, and configured to extract a part of a traveling wave component from the high-frequency oscillator and a part of a reflected wave component from a corresponding matcher of the plurality of matchers;
a filter configured to remove a noise signal included in the reflected wave component extracted by the directional coupler; and
a power monitor configured to:
measure the reflected wave component after passing through the filter and the traveling wave component extracted by the directional coupler and then passed through the filter; and
feedback-control the corresponding matcher to reduce a ratio between the reflected wave component and the traveling wave component measured by the power monitor, and
wherein the plurality of plasma generators includes buffer structures configured to generate plasma, respectively, and each of the buffer structures includes two first electrodes connected to the high-frequency power source and a second electrode that is disposed between the two first electrodes and grounded.
2. The substrate support assembly of claim 1 ,
wherein the controller is further configured to
determine whether a difference value between the lower inclination angle and the upper inclination angle is not within a predefined error range.
3. The substrate support assembly of claim 1 ,
wherein the controller is further configured to
communicate with at least one of a lower angle sensor configured to measure the lower inclination angle and an upper angle sensor configured to measure the upper inclination angle.
4. The substrate support assembly of claim 1 ,
wherein the link unit comprises:
a first link connected to the motor and configured to be driven in a vertical direction; and
a second link connecting the first link and the tilting plate and configured to be tilted with respect to a central axis of the first link,
wherein the first link and the second link are joint-coupled.
5. The substrate support assembly of claim 4 , wherein
the first link and the second link are coupled to each other by at least one of ball joint coupling and universal joint coupling.
6. The substrate support assembly of claim 1 , wherein
the link unit is plural, and
each of the link units is disposed to be equally symmetric with respect to a center of the tilting plate.
7. A substrate processing apparatus, comprising:
a process chamber in which a substrate is processed;
a gas supplier configured to supply a predetermined process gas into the process chamber; and
a plasma generation device comprising: a plurality of high-frequency power sources configured to supply power to a plurality of plasma generators, respectively; and
a plurality of matchers installed between the plurality of high-frequency power sources and the plurality of plasma generators, and configured to respectively match load impedances of the plasma generators with output impedances of the high-frequency power sources, wherein at least one high-frequency power source of the plurality of high-frequency power sources comprises:
a high-frequency oscillator configured to oscillate a high-frequency;
a directional coupler disposed at a subsequent stage of the high-frequency oscillator, and configured to extract a part of a traveling wave component from the high-frequency oscillator and a part of a reflected wave component from a corresponding matcher of the plurality of matchers;
a filter configured to remove a noise signal included in the reflected wave component extracted by the directional coupler; and
a power monitor configured to:
measure the reflected wave component after passing through the filter and the traveling wave component extracted by the directional coupler and then passed through the filter; and
feedback-control the corresponding matcher to reduce a ratio between the reflected wave component and the traveling wave component measured by the power monitor, and
wherein the plurality of plasma generators includes buffer structures configured to generate plasma, respectively, and each of the buffer structures includes two first electrodes connected to the high-frequency power source and a second electrode that is disposed between the two first electrodes and grounded.
8. A substrate processing device comprising:
a chamber;
a substrate support assembly configured to support a substrate in the chamber; and
a gas supplier coupled to an upper surface of the chamber and configured to define a reaction space of a reactor together with the substrate support assembly and to supply gas to the reaction space,
wherein the substrate support assembly comprises:
a support plate comprising a first surface on which the substrate is seated;
a driver configured to tilt the support plate such that the first surface is inclined with respect to a reference surface by a lower inclination angle greater than zero and less than 90 degree; and
a controller configured to control the driver
such that the lower inclination angle is adjusted based on an upper inclination angle greater than zero and less than 90 degree formed by the inclination of the gas supplier with respect to the reference surface,
wherein the reference surface is a bottom surface of the chamber,
wherein the driver comprises:
a motor;
a link unit connected to the motor and configured to be driven in a vertical direction;
a tilting plate connected to the link unit; and
a connecting arm extending from the tilting plate and coupled to the support plate, wherein the substrate processing device further comprises:
a lower angle sensor configured to measure the lower inclination angle; and
an upper angle sensor configured to measure the upper inclination angle.
9. The substrate processing device of claim 8 ,
wherein the controller is further configured to
control the driver such that the lower inclination angle and the upper inclination angle are equal to each other.
10. The substrate processing device of claim 8 ,
wherein
the controller is further configured to
communicate with the lower angle sensor.
11. The substrate processing device of claim 8 ,
wherein
the controller is further configured to
communicate with the upper angle sensor.
12. The substrate processing device of claim 8 ,
wherein
the controller is further configured to
determine whether a difference value between the lower inclination angle measured by the lower angle sensor and the upper inclination angle measured by the upper angle sensor is not within a predefined error range.
13. The substrate processing device of claim 8 ,
wherein the link unit comprises:
a first link connected to the motor and configured to be driven in a vertical direction first link; and
a second link connecting the first link and the tilting plate and configured to be tilted with respect to a central axis of the first link,
wherein the first link and the second link are joint-coupled.
14. The substrate processing device of claim 13 ,
wherein the first link and the second link are coupled to each other by at least one of ball joint coupling and universal joint coupling.
15. The substrate processing device of claim 8 ,
wherein the link unit is plural, and
each of the link units is disposed to be equally symmetric with respect to a center of the tilting plate.
16. The substrate processing device of claim 15 ,
wherein the controller is further configured to
individually control the motors respectively coupled to the link units.
17. The substrate processing device of claim 8 ,
wherein the driver further comprises:
a fixing plate comprising a hole,
wherein the fixing plate is between the tilting plate and the motor, and
the link unit is connected to the tilting plate through the hole.