Semiconductor device and method of testing a semiconductor device

1. A semiconductor device, comprising:

a semiconductor substrate;

a process control monitor test element group (PCMTEG) region formed on a surface of the semiconductor substrate, the PCMTEG has a plurality of test-element-groups (TEGs) each of which is classified by a type;

a main PCMTEG region and a sub-PCMTEG region arranged in the PCMTEG region; and

wherein: some of the TEGs having specifications for electrical characteristic values selected from respective types of the TEGs are arranged in the sub-PCMTEG region, and

the TEGs having no specifications for electrical characteristic values are arranged in the main PCMTEG region.

2. The semiconductor device according to claim 1 , wherein some of the TEGs having specifications for electrical characteristic values are further arranged in the main PCMTEG region.

3. The semiconductor device according to claim 1 , wherein the types of the TEGs include at least an N-type MOS transistor, a P-type MOS transistor, a resistor, and a capacitor.

4. The semiconductor device according to claim 1 , further comprising a TEG for checking probing is arranged adjacent to the sub-PCMTEG region.

5. A method of testing a semiconductor device having a process control monitor test element group (PCMTEG) region formed on a surface of a semiconductor substrate, the method comprising:

identifying a sub-PCMTEG region in the PCMTEG region, test-element-groups (TEGs) being arranged in the sub-PCMTEG region;

checking probing through use of a TEG for checking probing;

performing probing test with respect to all TEGs in the sub-PCMTEG region in order from a TEG arranged closer to the TEG for checking probing; and

determining electrical characteristic values of the all TEGs in the sub-PCMTEG region with reference to specifications.