Method of forming transition metal dichalcogenide thin film

1. A method of forming a transition metal dichalcogenide thin film on a substrate, the method comprising:

treating the substrate with a metal organic material; and

providing a transition metal precursor and a chalcogen precursor around the substrate to synthesize a transition metal dichalcogenide on the substrate, the transition metal precursor including a transition metal element and the chalcogen precursor including a chalcogen element, wherein

the treating the substrate provides a metal on a surface of the substrate,

the treating the substrate is performed without using H 2 S and includes heat-treating a vicinity of the substrate at a process temperature of 300° C. to 500° C. to decompose the metal organic material,

wherein the substrate includes at least one of silicon, silicon oxide, aluminum oxide, magnesium oxide, silicon carbide, silicon nitride, glass, quartz, sapphire, graphite, graphene, polyimide copolymer, polyimide, polyethylene naphthalate (PEN), a fluoropolymer (FEP), and polyethylene terephthalate (PET),

wherein the metal organic material includes at least one of trimethylaluminum, tris(demethylamido)aluminum, triisbutylaluminum, titanium isopropoxide, tetrakis(dimethylamido)titanium, bis(cyclopentadinenyl)nickel, and bis(ethylcyclopentadienyl)nickel.

2. The method of claim 1 , wherein

the metal organic material includes a metal for inducing adsorption of the transition metal precursor and the chalcogen precursor onto the substrate.

3. The method of claim 1 , wherein

the transition metal dichalcogenide is represented by Formula 1 below:

M 1-a M a ′X 2(1-b) X 2b ′  <Formula 1>

wherein, in Formula 1,

M and M′ are different transition metal elements from each other,

X and X′ are different chalcogen elements from each other,

0≤a<1, and

0≤b<1.

4. The method of claim 1 , wherein

the transition metal element includes at least one of Ti, Zr, Hf, V, Nb, Ta, Mo, W, Tc, Re, Co, Rh, Ir, Ni, Pd, Pt, Zn, and Sn, and

the chalcogen element includes at least one of S, Se, and Te.

5. The method of claim 1 , wherein

the transition metal precursor includes a transition metal halide.

6. The method of claim 5 , wherein

the transition metal halide includes at least one of MoF 3 , MoF 6 , MoF 4 , Mo 4 F 20 , MoCl 2 , MoCl 3 , MoCl 6 , MoCl 4 , MoCl 5 , MoBr 3 , MoBr 4 , MoI 2 , MoI 3 , MoI 4 , WF 6 , WF 4 , [WF 5 ] 4 , WCl 2 , WCl 6 , WCl 4 , [WCl 5 ] 2 , [W 6 Cl 12 ]Cl 6 , WBr 3 , WBr 6 , WBr 4 , WBr 5 , W 6 Br 14 , WI 2 , WI 3 , WI 4 , VF 2 , VF 3 , VF 4 , VF 5 , VCl 2 , VCl 3 , VCl 4 , VBr 2 , VBr 3 , VBr 4 , VI 2 , VI 3 , VI 4 , NbCl 3 , NbCl 4 , NbCl 5 , NbBr 4 , NbBr 5 , NbI 3 , NbI 4 , NbI 5 , TaF 3 , [TaF 5 ] 4 , TaCl 3 , TaCl 4 , TaCl 5 , TaBr 3 , TaBr 4 , TaBr 5 , TaI 4 , TaI 5 , TiF 2 , TiF 3 , TiF 4 , TiCl 4 , TiCl 3 , TiCl 2 , TiBr 3 , TiBr 4 , HfCl 4 , HfBr 2 , HfBr 4 , HfI 3 , HfI 4 , ZrF 4 , ZrCl 2 , ZrCl 3 , ZrCl 4 , ZrBr 3 , ZrBr 4 , ZrI 2 , ZrI 3 , ZrI 4 , TcF 6 , TcF 5 , TcCl 4 , TcCl 6 , TcBr 4 , ReF 6 , ReF 4 , ReF 5 , ReF 7 , Re 3 Cl 9 , ReCl 5 , ReCl 4 , ReCl 6 , ReBr 3 , ReBr 4 , ReBr 5 , ReI 3 , ReI 4 , CoF 2 , CoF 3 , CoF 4 , CoCl 2 , CoCl 3 , CoBr 2 , CoI 2 , RhF 3 , RhF 6 , RhF 4 , [RhF 5 ] 4 , RhCl 3 , RhBr 3 , RhI 3 , IrF 3 , IrF 6 , IrF 4 , [IrF 5 ] 4 , IrCl 2 , IrCl 3 , IrCl 4 , IrBr 2 , IrBr 3 , IrBr 4 , IrI 2 , IrI 3 , IrI 4 , NiF 2 , NiCl 2 , NiBr 2 , NiI 2 , PdF 2 , PdF 4 , PdCl 2 , PdBr 2 , PdI 2 , PtF 6 , PtF 4 , [PtF 5 ] 4 , PtCl 2 , PtCl 3 , PtCl 4 , Pt 6 Cl 12 , PtBr 2 , PtBr 3 , PtBr 4 , PtI 2 , PtI 3 , PtI 4 , GaF 3 , GaCl 2 , GaCl 3 , GaBr 3 , GaI 3 , SnF 2 , SnF 4 , SnCl 2 , SnCl 4 , SnBr 2 , SnBr 4 , SnI 2 , and SnI 4 .

7. The method of claim 1 , wherein

the chalcogen precursor includes at least one of sulfur, hydrogen sulfide (H 2 S), diethyl sulfide, dimethyl disulfide, ethyl methyl sulfide, (Et 3 Si) 2 S, selenium vapor, hydrogen selenide (H 2 Se), diethyl selenide, dimethyl diselenide, ethyl methyl selenide, (Et 3 Si) 2 Se, selenium vapor, tellurium vapor, hydrogen telluride (H 2 Te), dimethyl telluride, diethyl telluride, ethyl methyl telluride, and (Et 3 Si) 2 Te.

8. The method of claim 1 , wherein

the treating the substrate with the metal organic material includes providing the metal organic material around the substrate.

9. The method of claim 8 , wherein

the heat-treating the vicinity of the substrate produces a metal by the decomposition of the metal organic material on the substrate.

10. The method of claim 1 , wherein

the providing the transition metal precursor and the chalcogen precursor around the substrate forms the transition metal dichalcogenide thin film by an atomic layer deposition (ALD) process or a chemical vapor deposition (CVD) process.

11. The method of claim 1 , wherein

the treating the substrate with the metal organic material is performed before the providing the transition metal precursor and the chalcogen precursor around the substrate to synthesize the transition metal dichalcogenide or during the providing the transition metal precursor and the chalcogen precursor around the substrate to synthesize the transition metal dichalcogenide.

12. The method of claim 1 , wherein

the transition metal precursor and the chalcogen precursor are provided simultaneously to the substrate or provided alternately to the substrate.

13. A method of forming a transition metal dichalcogenide thin film on a substrate, the method comprising:

treating the substrate with a metal organic material; and

synthesizing a transition metal dichalcogenide on the substrate using an atomic layer deposition (ALD) process, wherein

the treating the substrate provides a metal on a surface of the substrate, and

the treating the substrate is performed without using H 2 S and includes heat-treating a vicinity of the substrate at a process temperature of 300° C. to 500° C. to decompose the metal organic material,

wherein the substrate includes at least one of silicon, silicon oxide, aluminum oxide, magnesium oxide, silicon carbide, silicon nitride, glass, quartz, sapphire, graphite, graphene, polyimide copolymer, polyimide, polyethylene naphthalate (PEN), a fluoropolymer (FEP), and polyethylene terephthalate (PET),

wherein the metal organic material includes at least one of trimethylaluminum, tris(demethylamido)aluminum, triisbutylaluminum, titanium isopropoxide, tetrakis(dimethylamido)titanium, bis(cyclopentadinenyl)nickel, and bis(ethylcyclopentadienyl)nickel.

14. The method of claim 13 , wherein

the forming of the transition metal dichalcogenide thin film is performed at 300° C. to 500° C.

15. A method of forming a transition metal dichalcogenide thin film on a substrate, the method comprising:

treating the substrate with a metal organic material; and

synthesizing a transition metal dichalcogenide on the substrate using a chemical vapor deposition (CVD) process, wherein

the treating the substrate provides a metal on a surface of the substrate, and

the treating the substrate is performed without using H 2 S and includes heat-treating a vicinity of the substrate at a process temperature of 300° C. to 500° C. to decompose the metal organic material,

wherein the substrate includes at least one of silicon, silicon oxide, aluminum oxide, magnesium oxide, silicon carbide, silicon nitride, glass, quartz, sapphire, graphite, graphene, polyimide copolymer, polyimide, polyethylene naphthalate (PEN), a fluoropolymer (FEP), and polyethylene terephthalate (PET),

wherein the metal organic material includes at least one of trimethylaluminum, tris(demethylamido)aluminum, triisbutylaluminum, titanium isopropoxide, tetrakis(dimethylamido)titanium, bis(cyclopentadinenyl)nickel, and bis(ethylcyclopentadienyl)nickel.

16. The method of claim 15 , wherein

the forming of the transition metal dichalcogenide thin film is performed at 300° C. to 500° C.

17. A method of forming a transition metal dichalcogenide thin film on a substrate, the method comprising:

treating a substrate to provide a metal on a surface of the substrate,

the metal including at least one of Al, Ti, and Ni; and

depositing a transition metal dichalcogenide layer on the surface of the substrate, wherein

the treating the substrate and the depositing the transition metal dichalcogenide layer are performed at process chamber temperatures in a range of 300° C. to 500° C. and

the treating the substrate is performed using a metal organic material and without using H 2 S,

wherein the substrate includes at least one of silicon, silicon oxide, aluminum oxide, magnesium oxide, silicon carbide, silicon nitride, glass, quartz, sapphire, graphite, graphene, polyimide copolymer, polyimide, polyethylene naphthalate (PEN), a fluoropolymer (FEP), and polyethylene terephthalate (PET),

wherein the metal organic material includes at least one of trimethylaluminum, tris(demethylamido)aluminum, triisbutylaluminum, titanium isopropoxide, tetrakis(dimethylamido)titanium, bis(cyclopentadinenyl)nickel, and bis(ethylcyclopentadienyl)nickel.

18. The method of claim 17 , wherein

the depositing the transition metal dichalcogenide layer is an atomic layer deposition (ALD) process or a chemical vapor deposition (CVD) process.

19. The method of claim 17 , wherein the treating the substrate is performed before the depositing the transition metal dichalcogenide layer.

20. The method of claim 17 , wherein the treating the substrate is performed during the depositing the transition metal dichalcogenide layer.