Die cleaning systems and related methods
Implementations of methods of forming a plurality of semiconductor die may include forming a damage layer beneath a surface of a die street in a semiconductor substrate, singulating the semiconductor substrate along the die street into a plurality of semiconductor die, and removing one or more particulates in the die street after singulating through applying sonic energy to the plurality of semiconductor die.
1. A method of forming a plurality of semiconductor die, the method comprising:
forming a damage layer beneath a surface of a die street in a semiconductor substrate using a laser;
ablating only a portion of material of the die street using the laser;
singulating the semiconductor substrate into a plurality of semiconductor die through sawing along the die street;
removing one or more particulates in the die street after singulating through applying sonic energy to the plurality of semiconductor die; and
spraying the plurality of semiconductor die with a liquid while applying the sonic energy;
wherein the sonic energy is applied directly to a spindle coupled with a chuck and transmitted to the chuck through the spindle, wherein the semiconductor substrate is upon the chuck.
2. The method of claim 1 , wherein the semiconductor substrate is silicon carbide.
3. The method of claim 1 , wherein forming a damage layer further comprises irradiating the die street with a laser beam at a focal point within the semiconductor substrate at one or more spaced apart locations beneath the surface of the die street to form the damage layer.
4. The method of claim 1 , wherein forming a damage layer further comprises:
irradiating the die street with a laser beam at a focal point at a first depth within the semiconductor substrate at one or more spaced apart locations beneath the surface of the die street; and
irradiating the die street with a laser beam at a focal point at a second depth within the semiconductor substrate at one or more spaced apart locations beneath the surface of the die street.
5. The method of claim 1 , wherein applying sonic energy further comprises applying sonic energy between 20 kHz to 3 GHz.
6. A method of forming a plurality of semiconductor die, the method comprising:
irradiating a semiconductor substrate with a laser beam at a focal point below a die street to form a damage layer;
scribing the semiconductor substrate along the die street using a stylus;
sawing the semiconductor substrate along the die street into a plurality of semiconductor die;
removing one or more particulates in the die street after sawing through applying sonic energy to the plurality of semiconductor die; and
spraying the plurality of semiconductor die with a liquid while applying the sonic energy;
wherein the sonic energy is applied directly to a spindle coupled with a chuck and transmitted to the chuck through the spindle, wherein the semiconductor substrate is upon the chuck.
7. The method of claim 6 , wherein applying sonic energy further comprises applying sonic energy between 20 kHz to 3 GHz.
8. The method of claim 6 , wherein the semiconductor substrate is silicon carbide.
9. The method of claim 6 , wherein irradiating the semiconductor substrate further comprises:
irradiating the die street with a laser beam at a focal point at a first depth within the semiconductor substrate at one or more spaced apart locations beneath a surface of the die street; and
irradiating the die street with a laser beam at a focal point at a second depth within the semiconductor substrate at one or more spaced apart locations beneath the surface of the die street.
10. The method of claim 6 , further comprising applying sonic energy to a saw blade while cutting the semiconductor substrate.
11. The method of claim 6 , wherein scribing the semiconductor substrate forms a crack that propagates only partially through the die street.
12. A method of forming a plurality of semiconductor die, the method comprising:
forming a damage layer beneath a surface of a die street in a semiconductor substrate;
singulating the semiconductor substrate along the die street into a plurality of semiconductor die;
removing one or more particulates in the die street after singulating through applying sonic energy to the plurality of semiconductor die; and
spraying the plurality of semiconductor die with a liquid while applying the sonic energy;
wherein the sonic energy is applied directly to a spindle coupled with a chuck and transmitted to the chuck through the spindle, wherein the semiconductor substrate is upon the chuck; and
wherein the sonic energy is applied to the spindle after singulating the semiconductor substrate.
13. The method of claim 12 , wherein forming a damage layer further comprises:
irradiating the die street with a laser beam at a focal point at a first depth within the semiconductor substrate at one or more spaced apart locations beneath the surface of the die street; and
irradiating the die street with a laser beam at a focal point at a second depth within the semiconductor substrate at one or more spaced apart locations beneath the surface of the die street;
wherein the first depth is deeper than the second depth; and
wherein irradiating the die street at the first depth is prior to irradiating the die street at the second depth.