Thin-film target for DT neutron production
A novel thin-film target can the life of tritium targets for the production of 14 MeV neutrons by the 3 H( 2 H,n) 4 He nuclear reaction while using only a small fraction of the amount of tritium compared to a standard thick-film target. With the thin-film target, the incident deuterium is implanted through the front tritide film into the underlying substrate material. A thin permeation barrier layer between the tritide film and substrate reduces the rate of tritium loss from the tritide film. As an example, good thin-film target performance was achieved using W and Fe for the barrier and substrate materials, respectively.
1. A thin-film target for DT neutron production, comprising:
an iron substrate having a high D permeability,
a tungsten permeation barrier layer having a low D permeability on the iron substrate to inhibit D permeation from the iron substrate therethrough, and
a front-surface tritide layer on the tungsten permeation barrier layer that reacts with an incident D beam to produce DT neutrons,
wherein the combined thickness of the tritide layer and the tungsten permeation barrier layer is less than the range of an incident D beam having an energy.
2. The thin-film target of claim 1 , wherein the combined thickness of the tritide layer and the tungsten permeation barrier layer if less than 50% of the range of the incident D beam.
3. The thin-film target of claim 2 , wherein the combined thickness is less than approximately 10% of the range of the incident D beam.
4. The thin-film target of claim 1 , wherein the tritide comprises a metal tritide.
5. The thin-film target of claim 4 , wherein the metal tritide comprises titanium tritide.