Tunable infrared pixels having unpatterned graphene layer and conductive metasurface
A monolithically integrated, tunable infrared pixel comprises a combined broadband detector and graphene-enabled tunable metasurface filter that operate as a single solid-state device with no moving parts. Functionally, tunability results from the plasmonic properties of graphene that are acutely dependent upon the carrier concentration within the infrared. Voltage induced changes in graphene's carrier concentration can be leveraged to change the metasurface filter's transmission thereby altering the “colors” of light reaching the broadband detector and hence its spectral responsivity. The invention enables spectrally agile infrared detection with independent pixel-to-pixel spectral tunability.
1. A tunable infrared pixel, comprising:
an infrared detector;
a bottom dielectric layer disposed on the infrared detector;
an unpatterned graphene layer on the bottom dielectric layer;
a top dielectric layer on the unpatterned graphene layer; and
a conductive metasurface on the top dielectric layer, wherein the metasurface is patterned to excite plasmons within the unpatterned graphene layer and wherein the metasurface is adapted to apply a voltage bias to the unpatterned graphene layer, thereby changing the Fermi level of the graphene and tuning the resonance response of the pixel to incident infrared light.
2. The tunable infrared pixel of claim 1 , wherein the infrared detector comprises a gallium-free type-II superlattice detector.
3. The tunable infrared pixel of claim 1 , wherein the infrared detector comprises a compound semiconductor.
4. The tunable infrared pixel of claim 3 , wherein the compound semiconductor comprises HgCdTe, InAs, InSb, or InGaAs.
5. The tunable infrared pixel of claim 1 , wherein the infrared detector comprises a pyroelectric or bolometric detector.
6. The tunable infrared pixel of claim 5 , wherein the pyroelectric or bolometric detector comprises deuterated triglycine sulfate or lead zirconate titanate.
7. The tunable infrared pixel of claim 1 , wherein the bottom dielectric layer comprises alumina.
8. The tunable infrared pixel of claim 1 , wherein the bottom dielectric layer comprises hafnium dioxide, magnesium oxide, lead zirconium titanate, or silicon dioxide, barium fluoride, silicon carbide, aluminum nitride or other polar dielectrics.
9. The tunable infrared pixel of claim 1 , wherein the bottom dielectric layer has a thickness of between 50 and 1000 nm.
10. The tunable infrared pixel of claim 1 , wherein the top dielectric layer comprises a high-κ gate dielectric.
11. The tunable infrared pixel of claim 10 , wherein κ is greater than 10.
12. The tunable infrared pixel of claim 1 , wherein the top dielectic layer comprises hafnium dioxide.
13. The tunable infrared pixel of claim 1 , wherein the top dielectric layer comprises hexagonal boron nitride, silicon dioxide, magnesium oxide, lead zirconium titanate, or alumina.
14. The tunable infrared pixel of claim 1 , wherein the metasurface comprises a conductive grating.
15. The tunable infrared pixel of claim 1 , wherein the metasurface comprises a metal.
16. The tunable infrared pixel of claim 1 , wherein the metasurface comprises a conductive oxide, conductive polymer, or other conductive non-metal.
17. The tunable infrared pixel of claim 1 , wherein the metasurface pattern has a periodicity that is subwavelength to the incident infrared light.
18. The tunable infrared pixel of claim 1 , wherein the wavelength of the incident infrared light is between 1 microns and 60 microns.
19. The tunable infrared pixel of claim 18 , wherein the wavelength of the incident infrared light is between 6 and 18 microns.
20. The tunable infrared pixel of claim 1 , further comprising at least one additional tunable infrared pixel to provide an array of detecting pixels.