Stacked transistors with different channel widths
A semiconductor device includes a first stack of nanowires above a substrate with a first gate structure over, around, and between the first stack of nanowires and a second stack of nanowires above the substrate with a second gate structure over, around, and between the second stack of nanowires. The device also includes a first source/drain region contacting a first number of nanowires of the first nanowire stack and a second source/drain region contacting a second number of nanowires of the second nanowire stack such that the first number and second number of contacted nanowires are different.
1. A semiconductor integrated circuit comprising:
a first stack of nanowires above a substrate;
a first gate structure over, around, and between the first stack of nanowires;
a second stack of nanowires above the substrate;
a second gate structure over, around, and between the second stack of nanowires;
a first source/drain region contacting a first number of nanowires of the first nanowire stack;
a second source/drain region contacting a second number of nanowires of the second nanowire stack;
wherein the first number and second number of contacted nanowires are different;
a first dielectric region between the first source/drain region and the substrate; and
a second dielectric region between the second source/drain region and the substrate,
wherein the first and second dielectric regions are different in thickness.
2. The semiconductor integrated circuit of claim 1 , wherein the first and second dielectric regions comprise a low-k dielectric material.
3. The semiconductor integrated circuit of claim 1 , wherein the first and second dielectric regions comprise silicon oxide, silicon nitride, or silicon oxynitride.
4. The semiconductor integrated circuit of claim 1 , wherein the first and second dielectric regions comprise SiOCN or SiBCN.
5. The semiconductor integrated circuit of claim 1 , further comprising:
a third stack of nanowires above the substrate;
a third gate structure over, around, and between the third stack of nanowires; and
a third source/drain region contacting a third number of nanowires of the third nanowire stack;
wherein the first, second, and third numbers of contacted nanowires are different.
6. The semiconductor integrated circuit of claim 1 ,
wherein the bottom surface of the first dielectric region is substantially coplanar with the bottom surface of the second gate structure.
7. The semiconductor integrated circuit of claim 1 , wherein the first and second stacks of nanowires comprise the same number of nanowires, and wherein nanowires which do not contact source/drain regions contact dielectric material instead.
8. The semiconductor integrated circuit of claim 1 , wherein the uppermost nanowire of the first nanowire stack contacting the first source/drain region is substantially coplanar with the uppermost nanowire of the second nanowire stack contacting the second source/drain region.
9. The semiconductor integrated circuit of claim 1 , further comprising a low-k interlevel dielectric above the first and second source/drain regions.
10. A semiconductor integrated circuit comprising:
a first stack of nanowires above a substrate;
a first gate structure over, around, and between the first stack of nanowires;
a second stack of nanowires above the substrate;
a second gate structure over, around, and between the second stack of nanowires;
a first source/drain region contacting a first number of nanowires of the first nanowire stack;
a second source/drain region contacting a second number of nanowires of the second nanowire stack;
wherein the first number and second number of contacted nanowires are different and the number of nanowires in the first and second nanowire stacks is the same;
a first dielectric region between the first source/drain region and the substrate; and
a second dielectric region between the second source/drain region and the substrate, wherein the first and second dielectric regions are different in thickness.
11. The semiconductor integrated circuit of claim 10 , wherein the first and second dielectric regions comprise a low-k dielectric.
12. The semiconductor integrated circuit of claim 10 , wherein the first and second dielectric regions comprise silicon oxide, silicon nitride, or silicon oxynitride.
13. The semiconductor integrated circuit of claim 10 , wherein the first and second dielectric regions comprise SiOCN or SiBCN.
14. The semiconductor integrated circuit of claim 10 , further comprising:
a third stack of nanowires above the substrate;
a third gate structure over, around, and between the third stack of nanowires; and
a third source/drain region contacting a third number of nanowires of the third nanowire stack;
wherein the number of nanowires in the first, second, and third nanowire stacks is the same, and wherein the first, second, and third numbers of contacted nanowires are different.
15. The semiconductor integrated circuit of claim 10 ,
wherein the bottom surface of the first dielectric region is substantially coplanar with the bottom surface of the second gate structure.
16. The semiconductor integrated circuit of claim 10 , wherein the uppermost nanowire of the first nanowire stack contacting a source/drain region is substantially coplanar with the uppermost nanowire of the second nanowire stack contacting a source/drain region.
17. The semiconductor integrated circuit of claim 10 , further comprising a low-k interlevel dielectric above the first and second source/drain regions.