Self-aligned subtractive interconnect patterning

1. A method of forming a semiconductor device, the method comprising:

forming a first set and second set of mandrel and spacer lines extending along a first direction on a film stack comprising a metal stack with a hard mask stack on the metal stack, each of the first set and second set of mandrel and spacer lines including a mandrel line with a spacer line on either side thereof, the first set and second set separated by a gap exposing a top surface of the hard mask stack;

memorizing a first cut location into a first material of the hard mask stack;

forming a second hard mask to protect the first cut location and define a via location spaced a distance along the first direction from the first cut location;

removing the second hard mask and extending the first cut location into a second material of the hard mask stack, the second material etch selective to the first material and spaced from the first material by a dielectric material, and memorize the via location in the first material;

depositing a material in the gap between the first set and second set of mandrel and spacer lines;

removing the mandrel lines from the first set and second set of mandrel and spacer lines to form mandrel openings;

memorizing a second cut location into the first material of the hard mask stack;

forming a third hard mask to protect the second cut location and define a second via location spaced a distance along the first direction from the second cut location;

removing the third hard mask and extending the second cut location into the second material of the hard mask stack and memorize the second via location in the first material;

forming replacement mandrel lines in the mandrel openings; and

removing the spacer lines, first material, dielectric material and second material of the hard mask stack to form a trench between the first cut location and second cut locations.

2. The method of claim 1 , wherein the first set and the second set of mandrel lines independently comprise one or more of an organic planarizing layer (OPL), an advanced pattern film (APF), amorphous silicon, or a spin-on hardmask (SOH).

3. The method of claim 1 , wherein the first set and second set of spacer lines independently comprising one or more of amorphous silicon, silicon oxide, silicon nitride or metal oxide.

4. The method of claim 1 , wherein the film stack comprises one or more of a tetraethylorthosilicate layer, a silicon oxynitride layer, a titanium nitride layer, a tantalum nitride layer, a metallization layer, an aluminum oxide layer, and a silicon nitride layer.

5. The method of claim 4 , wherein the metallization layer comprises ruthenium (Ru).

6. A method of forming a semiconductor device, the method comprising:

forming a metal stack;

forming a hard mask stack on the metal stack, the hard mask stack comprising a first material and a second material;

forming a first set and second set of mandrel and spacer lines extending along a first direction on the hard mask stack on the metal stack, each of the first set and second set of mandrel and spacer lines including a mandrel line with a spacer line on either side thereof, the first set and second set separated by a gap exposing a top surface of the hard mask stack;

memorizing a first opening into the first material of the hard mask stack;

forming a second hard mask to fill the first opening and form a via location spaced a distance along the first direction from the first opening;

removing the second hard mask and extending the first opening into the second material of the hard mask stack, the second material etch selective to the first material and spaced from the first material by a dielectric material, and memorize the via location in the first material;

depositing a gap fill in the gap between the first set and second set of mandrel and spacer lines;

removing the mandrel lines from the first set and second set of mandrel and spacer lines to form mandrel openings;

memorizing a second opening into the first material of the hard mask stack;

forming a third hard mask to fill the second opening and define a second via location spaced a distance along the first direction from the second opening;

removing the third hard mask and extending the second opening into the second material of the hard mask stack and memorizing the second via location in the first material;

forming replacement mandrel lines in the mandrel openings; and

removing the spacer lines, first material, dielectric material and second material of the hard mask stack to form a trench between the first opening and the second opening.

7. The method of claim 6 , wherein the first set and the second set of mandrel lines independently comprise one or more of an organic planarizing layer (OPL), an advanced pattern film (APF), or a spin-on hardmask (SOH).

8. The method of claim 6 , wherein the first set and second set of spacer lines independently comprising one or more of amorphous silicon, silicon oxide, silicon nitride or metal oxide.

9. The method of claim 6 , wherein the metal stack comprises one or more of a tetraethylorthosilicate layer, a barrier layer, and a metallization layer.

10. The method of claim 9 , wherein the metallization layer comprises ruthenium (Ru).

11. The method of claim 6 , wherein the first material and the second material independently comprises one or more of a titanium nitride layer and an aluminum oxide layer.

12. The method of claim 6 , wherein the dielectric material comprises one or more of a silicon nitride layer or a silicon oxynitride layer.

13. A non-transitory computer readable medium including instructions, that, when executed by a controller of a processing chamber, causes the processing chamber to perform operations of:

form a first set and second set of mandrel and spacer lines extending along a first direction on a film stack comprising a metal stack with a hard mask stack on the metal stack, each of the first set and second set of mandrel and spacer lines including a mandrel line with a spacer line on either side thereof, the first set and second set separated by a gap exposing a top surface of the hard mask stack;

memorize a first cut location into a first material of the hard mask stack;

form a second hard mask to protect the first cut location and define a via location spaced a distance along the first direction from the first cut location;

remove the second hard mask and extending the first cut location into a second material of the hard mask stack, the second material etch selective to the first material and spaced from the first material by a dielectric material, and memorize the via location in the first material;

deposit a material in the gap between the first set and second set of mandrel and spacer lines;

remove the mandrel lines from the first set and second set of mandrel and spacer lines to form mandrel openings;

memorize a second cut location into the first material of the hard mask stack;

form a third hard mask to protect the second cut location and define a second via location spaced a distance along the first direction from the second cut location;

remove the third hard mask and extending the second cut location into the second material of the hard mask stack and memorize the second via location in the first material;

form replacement mandrel lines in the mandrel openings; and

remove the spacer lines, first material, dielectric material and second material of the hard mask stack to form a trench between the first cut location and second cut locations.

14. The non-transitory computer readable medium of claim 13 , wherein the first set and the second set of mandrel lines independently comprise one or more of an organic planarizing layer (OPL), an advanced pattern film (APF), amorphous silicon, or a spin-on hardmask (SOH).

15. The non-transitory computer readable medium of claim 13 , wherein the first set and second set of spacer lines independently comprising one or more of amorphous silicon, silicon oxide, silicon nitride or metal oxide.

16. The non-transitory computer readable medium of claim 13 , wherein the film stack comprises one or more of a tetraethylorthosilicate layer, a silicon oxynitride layer, a titanium nitride layer, a tantalum nitride layer, a metallization layer, an aluminum oxide layer, and a silicon nitride layer.

17. The non-transitory computer readable medium of claim 16 , wherein the metallization layer comprises ruthenium (Ru).

18. The non-transitory computer readable medium of claim 13 , wherein the metal stack comprises one or more of a tetraethylorthosilicate layer, a barrier layer, and a metallization layer.

19. The non-transitory computer readable medium of claim 13 , wherein the first material and the second material independently comprises one or more of a titanium nitride layer and an aluminum oxide layer.

20. The non-transitory computer readable medium of claim 13 , wherein the dielectric material comprises one or more of a silicon nitride layer or a silicon oxynitride layer.