Fabrication method of semiconductor die and chip-on-plastic packaging of semiconductor die

1. A semiconductor chip packaging method, the method comprising:

forming an interlayer insulating film, metal wirings, and metal pads on a wafer including a semiconductor substrate;

forming a passivation insulating film on the semiconductor substrate;

patterning the passivation insulating film to expose the metal pads;

forming metal bumps connected to the exposed metal pads;

forming a coating film covering the metal bumps;

performing a laser grooving process after the coating film is formed on the metal bumps;

performing a plasma etching process on the grooved coating film;

exposing the metal bumps by removing the coating film covering the metal bumps;

fabricating a semiconductor die by performing a mechanical sawing of the wafer; and

packaging the semiconductor die, comprising:

preparing a flexible substrate comprising a bonding pad;

attaching an anisotropic conductive film (ACF) comprising conductive balls to the flexible substrate; and

attaching the metal bumps and the bonding pad of the flexible substrate to each other by using the conductive balls.

2. The method of claim 1 , further comprising:

preparing the semiconductor substrate comprising a semiconductor die region, a seal-ring region and a test region on the wafer.

3. The method of claim 2 , wherein, by performing the laser grooving process and the plasma etching process, the interlayer insulating film in the seal-ring region has a thickness less than a thickness of the interlayer insulating film in the semiconductor die region.

4. The method of claim 1 , wherein performing of the laser grooving process comprises:

exposing the semiconductor substrate of the wafer by removing the interlayer insulating film using a laser light source.

5. The method of claim 1 , wherein performing of the plasma etching process comprises:

performing a first plasma etching using oxygen (O 2 ) gas in a plasma state; and

performing a second plasma etching using fluorine (F) gas in a plasma state.

6. The method of claim 5 , wherein the first plasma etching further uses one of nitrogen (N 2 ), argon (Ar), and helium (He) gases, and

wherein the second plasma etching further uses oxygen gas, and the fluorine gas comprises one of carbon tetrafluoride (CF 4 ), sulfur hexafluoride (SF 6 ), octafluorocyclobutane (C 4 F 8 ), fluoromethane (CH 3 F), and nitrogen trifluoride (NF 3 ).

7. The method of claim 1 , wherein the plasma etching process is performed under a condition of a pressure of 5 to 700 mTorr and 10 to 10000 W of plasma power.

8. The method of claim 1 , wherein the packaging of the semiconductor die further comprises forming an organic light emission display panel on the flexible substrate,

wherein the semiconductor die comprises a display driving chip, and

wherein the packaging is chip-on plastic packaging (COP).

9. The method of claim 1 , wherein performing of the laser grooving process produces a grooving burr and debris, and

wherein performing of the plasma etching process removes the grooving burr and the debris.

10. A fabrication method of a semiconductor die, the method comprising:

preparing a semiconductor substrate comprising a semiconductor die region and a seal-ring region;

forming an interlayer insulating film, a metal wiring, and a metal pad on the semiconductor substrate;

forming a passivation insulating film on the substrate;

patterning the passivation insulating film;

forming a metal bump connected to the exposed metal pad;

forming a coating film covering the metal bump;

performing a laser grooving process after the coating film is formed on the metal bump;

performing a plasma etching process on the grooved coating film; and

exposing the metal bump by removing the coating film covering the metal bump,

wherein a thickness of the interlayer insulating film in the seal-ring region is smaller than a thickness of the interlayer insulating film in the semiconductor die region, and

wherein a trench isolation is formed in the seal-ring region where the interlayer insulating film, the metal wiring, the metal pad, and the passivation insulating film are formed.

11. The method of claim 10 , further comprising:

performing a mechanical sawing process on the semiconductor substrate to fabricate a semiconductor die.

12. The method of claim 11 , further comprising:

packaging the semiconductor die, wherein the packaging of the semiconductor die comprises:

preparing a flexible substrate comprising a bonding pad;

attaching an anisotropic conductive film (ACF) comprising conductive balls to the flexible substrate; and

connecting the metal bump of the semiconductor die to the bonding pad through the conductive balls.

13. The method of claim 12 , wherein the packaging of the semiconductor die further comprises forming an organic light emission display (OLED) panel on the flexible substrate, and

wherein a type of the packaging is chip-on plastic packaging (COP).

14. The method of claim 10 , wherein the plasma etching process removes a burr or debris generated by the laser grooving process.