Spin-orbit-torque type magnetoresistance effect element and magnetic memory
A spin-orbit-torque type magnetoresistance effect element includes: a first ferromagnetic layer; a second ferromagnetic layer; a non-magnetic layer which is located between the first ferromagnetic layer and the second ferromagnetic layer; and a spin-orbit-torque wiring which has the first ferromagnetic layer laminated thereon, wherein the spin-orbit-torque wiring extends in a second direction intersecting a first direction corresponding to an orthogonal direction of the first ferromagnetic layer, wherein the first ferromagnetic layer includes a first laminated structure and an interface magnetic layer in order from the spin-orbit-torque wiring, wherein the first laminated structure is a structure in which a ferromagnetic conductor layer and an inorganic compound containing layer are disposed in order from the spin-orbit-torque wiring, wherein the ferromagnetic conductor layer contains a ferromagnetic metal element, and wherein the inorganic compound containing layer contains at least one inorganic compound selected from a group consisting of carbide, nitride, and sulfide.
1. A spin-orbit-torque type magnetoresistance effect element comprising: a first ferromagnetic layer configured to change the magnetization direction; a second ferromagnetic layer; a non-magnetic layer which is located between the first ferromagnetic layer and the second ferromagnetic layer; and a spin-orbit-torque wiring which has the first ferromagnetic layer laminated thereon, wherein the spin-orbit-torque wiring extends in a second direction intersecting a first direction corresponding to an orthogonal direction of the first ferromagnetic layer, wherein the first ferromagnetic layer includes a first laminated structure and an interface magnetic layer in order from the spin-orbit-torque wiring, the interface magnetic layer being configured for the magnetization to be changed, wherein the first laminated structure is a structure in which a ferromagnetic conductor layer and an inorganic compound containing layer are disposed in order from the spin-orbit-torque wiring, wherein the ferromagnetic conductor layer contains a ferromagnetic metal element, wherein the inorganic compound containing layer contains at least one inorganic compound selected from a group consisting of carbide, nitride, and sulfide wherein cationic components in the inorganic compound of the inorganic compound containing layer are light metal elements selected from the group consisting of Mg, Al, Si, Ti, V, Cr, Mn, Cu, Zn, Ga, and Ge, wherein one or more second laminated structures in which a ferromagnetic conductor layer and an inorganic compound containing layer are laminated are inserted between the first laminated structure and the interface magnetic layer, and wherein a film thickness of the ferromagnetic conductor layer of the first laminated structure is thicker than a film thickness of the ferromagnetic conductor layer of the one or more second laminated structures.
2. The spin-orbit-torque type magnetoresistance effect element according to claim 1 ,
wherein one or more second laminated structure in which a ferromagnetic conductor layer and an inorganic compound containing layer are laminated are inserted between the first laminated structure and the interface magnetic layer.
3. The spin-orbit-torque type magnetoresistance effect element according to claim 1 ,
wherein a film thickness of the inorganic compound containing layer is 1.0 nm or less.
4. The spin-orbit-torque type magnetoresistance effect element according to claim 1 ,
wherein the first ferromagnetic layer includes a diffusion preventing layer and the diffusion preventing layer is located on a surface opposite to a contact side to the nonmagnetic layer in the interface magnetic layer.
5. The spin-orbit-torque type magnetoresistance effect element according to claim 1 ,
wherein the interface magnetic layer contains at least one element selected from a group consisting of Co, Fe, and B.
6. A magnetic memory comprising:
a plurality of the spin-orbit-torque type magnetoresistance effect element according to claim 1 .
7. A spin-orbit-torque type magnetoresistance effect element comprising: a first ferromagnetic layer configured to change the magnetization direction; a second ferromagnetic layer; a non-magnetic layer which is located between the first ferromagnetic layer and the second ferromagnetic layer; and a spin-orbit-torque wiring which has the first ferromagnetic layer laminated thereon, wherein the spin-orbit-torque wiring extends in a second direction intersecting a first direction corresponding to an orthogonal direction of the first ferromagnetic layer, wherein the first ferromagnetic layer includes a first laminated structure and an interface magnetic layer in order from the spin-orbit-torque wiring, the interface magnetic layer being configured for the magnetization to be changed, wherein the first laminated structure is a structure in which a ferromagnetic conductor layer and an inorganic compound containing layer are disposed in order from the spin-orbit-torque wiring, wherein the ferromagnetic conductor layer contains a ferromagnetic metal element, wherein the inorganic compound containing layer contains at least one inorganic compound selected from a group consisting of carbide, nitride, and sulfide, wherein cationic components in the inorganic compound of the inorganic compound containing layer are heavy metal elements selected from the group consisting of Mo, Ru, Rh, Pd, Ag, Cd, Hf, Ta, W, Re, Os, Ir, Pt, and Au, wherein one or more second laminated structures in which a ferromagnetic conductor layer and an inorganic compound containing layer are laminated are inserted between the first laminated structure and the interface magnetic layer, and wherein a film thickness of the ferromagnetic conductor layer of the first laminated structure is thicker than a film thickness of the ferromagnetic conductor layer of the one or more second laminated structures.
8. The spin-orbit-torque type magnetoresistance effect element according to claim 7 ,
wherein one or more second laminated structure in which a ferromagnetic conductor layer and an inorganic compound containing layer are laminated are inserted between the first laminated structure and the interface magnetic layer.
9. The spin-orbit-torque type magnetoresistance effect element according to claim 7 ,
wherein a film thickness of the inorganic compound containing layer is 1.0 nm or less.
10. The spin-orbit-torque type magnetoresistance effect element according to claim 7 ,
wherein the first ferromagnetic layer includes a diffusion preventing layer and the diffusion preventing layer is located on a surface opposite to a contact side to the nonmagnetic layer in the interface magnetic layer.
11. The spin-orbit-torque type magnetoresistance effect element according to claim 7 ,
wherein the interface magnetic layer contains at least one element selected from a group consisting of Co, Fe, and B.
12. A magnetic memory comprising:
a plurality of the spin-orbit-torque type magnetoresistance effect element according to claim 7 .
13. A spin-orbit-torque type magnetoresistance effect element comprising: a first ferromagnetic layer configured to change the magnetization direction; a second ferromagnetic layer; a non-magnetic layer which is located between the first ferromagnetic layer and the second ferromagnetic layer; and a spin-orbit-torque wiring which has the first ferromagnetic layer laminated thereon, wherein the spin-orbit-torque wiring extends in a second direction intersecting a first direction corresponding to an orthogonal direction of the first ferromagnetic layer, wherein the first ferromagnetic layer includes a first laminated structure and an interface magnetic layer in order from the spin-orbit-torque wiring, the interface magnetic layer being configured for the magnetization to be changed, wherein the first laminated structure is a structure in which a ferromagnetic conductor layer and an inorganic compound containing layer are disposed in order from the spin-orbit-torque wiring, wherein the ferromagnetic conductor layer contains a ferromagnetic metal element, wherein the inorganic compound containing layer contains at least one inorganic compound selected from a group consisting of carbide, nitride, and sulfide, wherein one or more second laminated structures in which a ferromagnetic conductor layer and an inorganic compound containing layer are laminated are inserted between the first laminated structure and the interface magnetic layer, and wherein a film thickness of the ferromagnetic conductor layer of the first laminated structure is thicker than a film thickness of the ferromagnetic conductor layer of the one or more second laminated structures.
14. The spin-orbit-torque type magnetoresistance effect element according to claim 13 ,
wherein cationic components in the inorganic compound of the inorganic compound containing layer are light metal elements selected from the group consisting of Mg, Al, Si, Ti, V, Cr, Mn, Cu, Zn, Ga, and Ge.
15. The spin-orbit-torque type magnetoresistance effect element according to claim 13 ,
wherein cationic components in the inorganic compound of the inorganic compound containing layer are heavy metal elements selected from the group consisting of Mo, Ru, Rh, Pd, Ag, Cd, Hf, Ta, W, Re, Os, Ir, Pt, and Au.
16. The spin-orbit-torque type magnetoresistance effect element according to claim 13 ,
wherein a film thickness of the inorganic compound containing layer is 1.0 nm or less.
17. The spin-orbit-torque type magnetoresistance effect element according to claim 13 ,
wherein the first ferromagnetic layer includes a diffusion preventing layer and the diffusion preventing layer is located on a surface opposite to a contact side to the nonmagnetic layer in the interface magnetic layer.
18. The spin-orbit-torque type magnetoresistance effect element according to claim 13 ,
wherein the interface magnetic layer contains at least one element selected from a group consisting of Co, Fe, and B.
19. A magnetic memory comprising:
a plurality of the spin-orbit-torque type magnetoresistance effect element according to claim 13 .