Display device including an auxiliary layer
A display device is provided including a substrate. A second semiconductor layer is disposed on the substrate. The second semiconductor layer includes Si. A second gate lower electrode overlaps a channel region of the second semiconductor layer. A second gate insulating layer is disposed on the second gate lower electrode. A second gate upper electrode and a light blocking layer are disposed on the second gate insulating layer. A first auxiliary layer is disposed on the second gate upper electrode and the light blocking layer. A first semiconductor layer overlaps the light blocking layer. The first semiconductor layer includes an oxide semiconductor. A first gate electrode overlaps a channel region of the first semiconductor layer. The first auxiliary layer includes an insulating layer including at least one compound selected from SiNx, SiOx, and SiON, and at least one material selected from F, Cl, and C.
1. A display device, comprising:
a substrate;
a second semiconductor layer disposed on the substrate, the second semiconductor layer including Si;
a second gate lower electrode overlaps a channel region of the second semiconductor layer;
a second gate insulating layer disposed on the second gate lower electrode;
a second gate upper electrode and a light blocking layer disposed on the second gate insulating layer;
a first auxiliary layer disposed on the second gate upper electrode and the light blocking layer;
a first semiconductor layer overlaps the light blocking layer, the first semiconductor layer includes an oxide semiconductor; and
a first gate electrode overlaps a channel region of the first semiconductor layer,
wherein the first auxiliary layer includes an insulating layer including at least one compound selected from SiNx, SiOx, and SiON, and at least one material selected from F, Cl, and C,
wherein a content of the at least one material selected from F, Cl, and C included in the first auxiliary layer is three times or more greater than that of at least one material selected from F, Cl, and C included in the second gate insulating layer.
2. The display device of claim 1 , wherein
a thickness of the first auxiliary layer is in a range of 1 Å to 100 Å.
3. The display device of claim 1 , wherein
the second gate upper electrode and the light blocking layer include a same material.
4. The display device of claim 1 , wherein
the light blocking layer overlaps the first semiconductor layer and has an area similar to that of the first semiconductor layer.
5. The display device of claim 1 , further comprising:
a third gate insulating layer disposed between the first semiconductor layer and the first gate electrode,
wherein the third gate insulating layer overlaps the first semiconductor layer.
6. The display device of claim 1 , further comprising:
a third gate insulating layer disposed between the first semiconductor layer and the first gate electrode,
wherein the third gate insulating layer overlaps the channel region of the first semiconductor layer and does not overlap a source region and a drain region of the first semiconductor layer.
7. The display device of claim 1 , further comprising:
a second auxiliary layer disposed on the first gate electrode,
wherein the second auxiliary layer includes an insulating layer including at least one compound selected from SiNx, SiOx, and SiON, and at least one material selected from F, Cl, and C, and
a content of the at least one material selected from F, Cl, and C included in the second auxiliary layer is three times or more greater than at least one material selected from F, Cl, and C included in the second gate insulating layer.
8. The display device of claim 7 , further comprising:
a third gate insulating layer disposed between the first semiconductor layer and the first gate electrode,
wherein the third gate insulating layer overlaps the first semiconductor layer.
9. The display device of claim 7 , further comprising:
a third gate insulating layer disposed between the first semiconductor layer and the first gate electrode,
wherein the third gate insulating layer overlaps the channel region of the first semiconductor layer and does not overlap a source region and a drain region of the first semiconductor layer.
10. The display device of claim 1 , further comprising:
a third auxiliary layer disposed between the second gate lower electrode and the second gate insulating layer,
wherein the third auxiliary layer includes an insulating layer including at least one compound selected from SiNx, SiOx, and SiON, and at least one material selected from F, Cl, and C, and
a content of the at least one material selected from F, Cl, and C included in the third auxiliary layer is three times or more greater than that of one or materials of F, Cl, and C included in the second gate insulating layer.
11. The display device of claim 10 , further comprising:
a third gate insulating layer disposed between the first semiconductor layer and the first gate electrode,
wherein the third gate insulating layer overlaps the first semiconductor layer.
12. The display device of claim 10 , further comprising:
a third gate insulating layer disposed between the first semiconductor layer and the first gate electrode,
wherein the third gate insulating layer overlaps the channel region of the first semiconductor layer and does not overlap a source region and a drain region of the first semiconductor layer.
13. The display device of claim 1 , further comprising:
a second auxiliary layer disposed on the first gate electrode; and a third auxiliary layer disposed between the second gate lower electrode and the second gate insulating layer,
wherein each of the second auxiliary layer and the third auxiliary layer includes an insulating layer including at least one compound selected from SiNx, SiOx, and SiON, and at least one material selected from F, Cl, and C, and
a content of the at least one material selected from F, Cl, and C included in the second auxiliary layer and the third auxiliary layer is three times or more greater than at least one material selected from F, Cl, and C included in the second gate insulating layer.
14. The display device of claim 13 , further comprising
a third gate insulating layer disposed between the first semiconductor layer and the first gate electrode,
wherein the third gate insulating layer overlaps the first semiconductor layer.
15. The display device of claim 13 , further comprising
a third gate insulating layer disposed between the first semiconductor layer and the first gate electrode,
wherein the third gate insulating layer overlaps the channel region of the first semiconductor layer and does not overlap a source region and a drain region of the first semiconductor layer.
16. The display device of claim 15 , wherein
a light blocking layer is disposed on a same layer as the second gate upper electrode, and
the first auxiliary layer is disposed on the second gate upper electrode and the light blocking layer.
17. The display device of claim 15 , further comprising
a second auxiliary layer disposed on the first gate electrode,
wherein the second auxiliary layer includes an insulating layer including at least one compound selected from SiNx, SiOx, and SiON, and at least one material selected from F, Cl, and C.
18. The display device of claim 15 , further comprising
a third auxiliary layer disposed between the second gate lower electrode and the second gate upper electrode,
wherein the third auxiliary layer includes an insulating layer including at least one compound selected from SiNx, SiOx, and SiON, and at least one material selected from F, Cl, and C.
19. A display device, comprising:
a substrate; and
a first transistor and a second transistor disposed on the substrate;
the first transistor includes a first semiconductor layer, the first semiconductor layer including air oxide semiconductor and a first gate electrode,
the second transistor includes a second semiconductor layer, the second semiconductor layer including a Si semiconductor, a second gate lower electrode and a second gate upper electrode,
a first auxiliary layer is disposed between the second gate upper electrode and the first semiconductor layer, and
the first auxiliary layer includes an insulating layer and at least one material selected from F, Cl, and C,
wherein a content of the at least one material selected from F, Cl, and C included in the first auxiliary layer is three times or more greater than that of at least one material selected from F, Cl, and C included in a second gate insulating layer.