Semiconductor processing tools with improved performance by use of hybrid learning models

1. A method for developing a semiconductor manufacturing process recipe, comprising:

selecting one or more device outcomes;

querying a hybrid model to obtain a process recipe recommendation suitable for obtaining the device outcomes, wherein the hybrid process model comprises:

a statistical model; and

a physical model, wherein the physical model is generated from a simulation of physical and chemical interactions within a processing tool across a plurality of different processing parameters;

executing a design of experiment (DoE) on a set of wafers to validate the process recipe recommended by the hybrid process model and to provide a validated process recipe, wherein the validated process recipe comprises an oxidation process, the oxidation process for growth of an oxide material;

applying the validated process recipe to a wafer, wherein applying the validated process recipe to the wafer comprises applying the oxidation process to grow the oxide material the wafer executing the recipe on a plurality of first wafers;

obtaining wafer data from the plurality of first wafers;

obtaining process data from the processing tool relating to the execution of the recipe on the plurality of first wafers;

and providing the wafer data and the process data from the processing of the plurality of first wafers to the hybrid model to generate an updated hybrid model.

2. The method of claim 1 , wherein executing the DoE comprises:

measuring the DoE wafer results with a metrology tool; and

determining from the DoE wafer results if the desired device outcomes are achieved.

3. The method of claim 1 , wherein the oxidation process is a radical oxidation process.

4. The method of claim 3 , wherein the process recipe comprises one or more of a pressure, a temperature, a flow rate, and a soak time.

5. The method of claim 3 , wherein the device outcomes comprise one or more of a thickness, a thickness uniformity, a profile, and a hydrogen percentage.

6. The method of claim 1 , wherein the statistical model is generated from a physical DoE and interpolation of data from the physical DoE.

7. The method of claim 1 , wherein the hybrid model is a multi-dimensional process space.

8. A method of baselining a chamber executing a semiconductor manufacturing process, comprising:

running a limited design of experiment (DoE) of wafers with external metrology to baseline chamber performance;

adding wafer outcomes and metrology data from the limited DoE to a hybrid model as a calibration data set, wherein the hybrid model comprises:

a statistical model; and

a physical model, wherein the physical model is generated from a simulation of physical and chemical interactions within a processing tool across a plurality of different processing parameters;

adjusting the model's predictions to account for specific chamber conditions and/or wafer conditions identified by the limited DoE;

predicting optimized process parameters to achieve a desired wafer outcome for wafers processed in the chamber and to provide optimized process parameters, wherein the optimized process parameters comprise an oxidation process, the oxidation process for growth of an oxide material;

applying the optimized process parameters to a wafer, wherein applying the optimized process parameters to the wafer comprises applying the oxidation process to grow the oxide material the wafer executing the recipe on a plurality of first wafers;

obtaining wafer data from the plurality of first wafers;

obtaining process data from the processing tool relating to the execution of the recipe on the plurality of first wafers;

and providing the wafer data and the process data from the processing of the plurality of first wafers to the hybrid model to generate an updated hybrid model.

9. The method of claim 8 , wherein the oxidation process is a radical oxidation process.

10. The method of claim 9 , wherein the process parameters comprises one or more of a pressure, a flow rate, temperature and a soak time.

11. The method of claim 3 , wherein the wafer outcome comprises one or more of a thickness, a thickness uniformity, a profile, and a hydrogen percentage.

12. The method of claim 8 , wherein the statistical model is generated from a modeling DoE and interpolation of data from the modeling DoE.

13. The method of claim 8 , wherein the hybrid model is a multi-dimensional process space.

14. The method of claim 8 , wherein the limited DoE comprises 20 or fewer wafers.

15. A method for processing wafers in a processing tool, comprising:

providing a hybrid model of a processing tool, wherein the hybrid model comprises:

a statistical model; and

a physical model, wherein the physical model is generated from a simulation of physical and chemical interactions within a processing tool across a plurality of different processing parameters;

executing a recipe in the processing tool to process a first wafer;

obtaining wafer data from the first wafer after execution of the recipe;

obtaining process data from the processing tool relating to the execution of the recipe;

providing the wafer data and the process data to the hybrid model to generate an updated hybrid model;

using the updated hybrid model to generate a modified recipe to account for chamber drift in the processing tool, wherein the modified recipe comprises an oxidation process, the oxidation process for growth of an oxide material;

applying the modified recipe to a second wafer in the processing tool, wherein applying the modified recipe to the wafer comprises applying the oxidation process to grow the oxide material the wafer executing the recipe on a plurality of first wafers;

obtaining wafer data from the plurality of first wafers;

obtaining process data from the processing tool relating to the execution of the recipe on the plurality of first wafers;

and providing the wafer data and the process data from the processing of the plurality of first wafers to the hybrid model to generate an updated hybrid model.

16. The method of claim 15 , wherein the wafer data comprises metrology data.

17. The method of claim 16 , wherein the metrology data comprises one or more of a thickness, a thickness uniformity, a profile, and a hydrogen percentage.