Boron-containing compounds, compositions, and methods for the deposition of a boron containing films

1. A method of forming a boron doped silicon nitride, boron doped silicon carbonitride, or boron doped silicon carboxynitride film via a deposition process selected from the group consisting of an atomic layer deposition process and an ALD-like process, the method comprising the steps of:

a. providing a substrate in a reactor;

b. introducing into the reactor at least one boron-containing precursor represented by either of the following Formulae I and II below:

wherein R 1 is selected from a linear C 1 to C 10 alkyl group, a branched C 3 to C 10 alkyl group, a linear or branched C 3 to C 10 alkenyl group, a linear or branched C 3 to C 10 alkynyl group, a C 1 to C 6 dialkylamino group, an electron withdrawing group such as halides (Cl, Br, I), and a C 6 to C 10 aryl group; R 2 is selected from hydrogen, a linear C 1 to C 10 alkyl group, a branched C 3 to C 10 alkyl group, a linear or branched C 3 to C 6 alkenyl group, a linear or branched C 3 to C 6 alkynyl group, a C 1 to C 6 dialkylamino group, a C 6 to C 10 aryl group, a linear or branched C 1 to C 6 fluorinated alkyl group, an electron withdrawing group such as halides (Cl, Br, I), and a C 4 to C 10 aryl group;

c. purging the reactor with a first purge gas;

d. providing at least one nitrogen-containing source to deposit the film onto the at least one surface;

e. purging the reactor with a second purge gas;

f. introducing into the reactor at least one silicon-containing source;

g. purging the reactor with a third purge gas;

h. providing at least one nitrogen-containing source to deposit the film onto the at least one surface;

i. purging the reactor with a fourth purge gas;

wherein steps b through i are repeated until a desired thickness of the film is obtained, and wherein the first through fourth purge gases may be the same or different.

2. The method of claim 1 wherein the nitrogen-containing source comprises at least one member selected from the group consisting of ammonia, hydrazine, monoalkylhydrazine, dialkylhydrazine, organoamine, organoamine plasma, nitrogen, nitrogen plasma, nitrogen/hydrogen, nitrogen/helium, nitrogen/argon plasma, ammonia plasma, ammonia/helium plasma, ammonia/argon plasma, ammonia/nitrogen plasma, NF 3 , NF 3 plasma, and mixtures thereof.

3. A boron-containing film produced in accordance with claim 1 .

4. The method of claim 1 further comprising introducing a silicon source into the reactor.

5. The method of claim 4 wherein the silicon source has at least one Si-H3 group.

6. The method of claim 5 wherein the silicon source comprises di-iso-propylaminodisilane.

7. The method of claim 1 further comprising introducing a metal containing source into the reactor.

8. The method of claim 7 wherein the metal source comprises at least one member selected from the group consisting of aluminum, zirconium, hafnium, titanium, vanadium, tantalum, and tungsten.

9. The method of claim 7 wherein the metal source comprises tetrakis(dimethylamino)titanium.