Process of Forming an Electronic Device Including a Junction Field-Effect Transistor Having a Gate Within a Well Region

1 . A process of forming an electronic device comprising:

forming a first well region in a semiconductor material and forming a second well region in the semiconductor material, wherein:

the first well region and the second well region are formed during a same first doping operation,

each of the first well region and the second well region has a first conductivity type and is lightly doped, and

the first well region includes a gate electrode of the junction field-effect transistor, wherein the gate electrode contacts a channel region of the junction field-effect transistor;

forming a gate dielectric layer over the second well region; and

forming a gate electrode of a first metal-insulator-semiconductor field-effect transistor over the second well region,

wherein, in a finished device, the first metal-insulator-semiconductor field-effect transistor includes a channel region, a first part of the gate dielectric layer, and the gate electrode of the first metal-insulator-semiconductor field-effect transistor, and wherein the channel region of the first metal-insulator-semiconductor field-effect transistor includes a part of the second well region.

2 . The process of claim 1 , further comprising forming a gate contact region within the first well region, wherein the gate contact region has the first conductivity type and a peak dopant concentration of at least 1×10 19 atoms/cm 3 .

3 . The process of claim 2 , wherein forming the first well region and the second well region is performed such that each of the first well region and the second well region has an average dopant concentration in a range of 1×10 14 atoms/cm 3 to 5×10 17 atoms/cm 3 .

4 . The process of claim 1 , further comprising forming a third well region within the semiconductor material, wherein the third well region has a second conductivity type opposite the first conductivity type, an average dopant concentration less than an average dopant concentration of the first well region, and, in the finished device, sides and a bottom of the first well region contact the third well region.

5 . The process of claim 4 , wherein forming the third well region is performed such that the third well region has a depth in a range of 0.5 micron to 5 microns and an average dopant concentration in a range of 5×10 13 atoms/cm 3 to 1×10 17 atoms/cm 3 .

6 . The process of claim 4 , wherein forming the third well region is performed such that the third well region is a single well region that includes a source region of the junction field-effect transistor and a drain region of the junction field-effect transistor.

7 . The process of claim 6 , further comprising:

forming a gate contact region of the junction field-effect transistor within the first well region;

forming a source contact region of the junction field-effect transistor within the third well region;

forming a drain contact region of the junction field-effect transistor within the third well region within the drain region of the junction field-effect transistor;

forming a first conductive member in contact with the gate contact region, wherein a first ohmic contact is formed between the first conductive member and the gate contact region;

forming a second conductive member in contact with the source contact region, wherein a second ohmic contact is formed between the second conductive member and the source contact region; and

forming a third conductive member in contact with the drain contact region, wherein a third ohmic contact is formed between the third conductive member and the drain contact region.

8 . The process of claim 4 , wherein forming the first well region and forming the third well region are performed such that a thickness of the channel region of the junction field-effect transistor is a difference in between depths of the first well region and the third well region.

9 . The process of claim 8 , wherein forming the first well region and forming the third well region are performed such that the thickness of the channel region of the junction field-effect transistor is at most 2.0 microns.

10 . The process of claim 4 , further comprising forming a fourth well region within the semiconductor material, wherein:

the third well region and the fourth well region are formed during a same second doping operation,

each of the third well region and the fourth well region has the second conductivity type, and

in the finished device, a second metal-insulator-semiconductor field-effect transistor includes a channel region that includes a part of the fourth well region.

11 . The process of claim 10 , wherein:

each of the first well region and the second well region has an average dopant concentration that is greater an average dopant concentration of each of the third well region and the fourth well region,

the average dopant concentration of each of the first well region and the second well region is in a range of 1×10 14 atoms/cm 3 to 5×10 17 atoms/cm 3 , and

the average dopant concentration of each of the third well region and the fourth well region is in a range of 5×10 13 atoms/cm 3 to 1×10 17 atoms/cm 3 .

12 . The process of claim 10 , further comprising forming a gate electrode of the second metal-insulator-semiconductor field-effect transistor over the fourth well region, wherein the gate electrode of the second metal-insulator-semiconductor field-effect transistor is spaced apart from the fourth well region by a second part of the gate dielectric layer.

13 . The process of claim 12 , further comprising:

forming a gate contact region of the junction field-effect transistor within the first well region, a source region of the second metal-insulator-semiconductor field-effect transistor within the fourth well region, and a drain region of the second metal-insulator-semiconductor field-effect transistor within the fourth well region, wherein the gate contact region, the source region of the second metal-insulator-semiconductor field-effect transistor, and the drain region of the second metal-insulator-semiconductor field-effect transistor are formed during a same third doping operation; and

forming a source contact region of the junction field-effect transistor within the third well region, a drain contact region of the junction field-effect transistor within the third well region, a source region of the first metal-insulator-semiconductor field-effect transistor within the second well region, and a drain region of the first metal-insulator-semiconductor field-effect transistor within the second well region, wherein the source contact region, the drain contact region, the source region of the first metal-insulator-semiconductor field-effect transistor, and the drain region of the first metal-insulator-semiconductor field-effect transistor are formed during a same fourth doping operation.

14 . A process of forming an electronic device comprising:

forming a first well region within a substrate, wherein the first well region has a first conductivity type and includes a drain region or a source region of a junction field-effect transistor;

forming a second well region within the substrate, wherein the second well region is spaced apart from the first well region, has the first conductivity type, and includes the other of the drain region and the source region of the junction field-effect transistor; and

forming a third well region within the substrate, wherein the third well region has a second conductivity type opposite the first conductivity type,

wherein:

a first portion of the third well region is disposed between the first well region and the second well region, does not counter dope the first well region, and does not counter dope the second well region,

the third well region includes a gate electrode of the junction field-effect transistor, and

the gate electrode of the junction field-effect transistor contacts a channel region of the junction field-effect transistor;

forming a first contact region within the first well region, wherein the first contact region has the first conductivity type, and a peak dopant concentration of the first contact region is greater than an average dopant concentration of the first well region;

forming a second contact region within the second well region, wherein the second contact region has the first conductivity type, and a peak dopant concentration of the second contact region is greater than an average dopant concentration of the second well region;

forming a third contact region within the third well region, wherein the third contact region has the second conductivity type, and a peak dopant concentration of the third contact region is greater than an average dopant concentration of the third well region; and

forming a first metal-insulator-semiconductor field-effect transistor overlying the substrate and including a channel region that includes a fourth well region spaced apart from the first well region, the second well region, and the third well region, wherein the fourth well region has the second conductivity type.

15 . The process of claim 14 , wherein:

forming the first well region is performed such that the average dopant concentration of the first well region is in a range of 5×10 13 atoms/cm 3 to 1×10 17 atoms/cm 3 ,

forming the second well region is performed such that the average dopant concentration of the second well region is in a range of 5×10 13 atoms/cm 3 to 1×10 17 atoms/cm 3 , and

forming the third well region is performed such that the average dopant concentration of the third well region is in a range of 1×10 14 atoms/cm 3 to 5×10 17 atoms/cm 3 .

16 . The process of claim 14 , wherein:

forming the first contact region is performed such that the peak dopant concentration of the first contact region is at least 1×10 19 atoms/cm 3 ,

forming the second contact region is performed such that the peak dopant concentration of the second contact region is at least 1×10 19 atoms/cm 3 , and

forming the third contact region is performed such that the peak dopant concentration of the third contact region is at least 1×10 19 atoms/cm 3 .

17 . The process of claim 14 , further comprising:

forming a first conductive member in contact with the first contact region, wherein a first ohmic contact is formed between the first conductive member and the first contact region;

forming a second conductive member in contact with the second contact region, wherein a second ohmic contact is formed between the second conductive member and the second contact region; and

forming a third conductive member in contact with the third contact region, wherein a third ohmic contact is formed between the third conductive member and the third contact region.

18 . The process of claim 14 , wherein forming the third well region comprises forming the third well region including:

a second portion of the third well region is adjacent to the first well region and counter dopes a part of the first well region,

a third portion of the third well region is adjacent to the second well region and counter dopes a part of the second well region, and

wherein the first portion of the third well region is disposed between the second portion of the third well region and the third portion of the third well region.

19 . The electronic device of claim 14 , wherein forming the third well region comprises forming the third well region such that the first portion of the third well region overlies a channel region of the junction field-effect transistor.

20 . The electronic device of claim 14 , wherein:

forming the first well region is performed such that the average dopant concentration of the first well region is in a range of 5×10 13 atoms/cm 3 to 1×10 17 atoms/cm 3 ,

forming the second well region is performed such that the average dopant concentration of the second well region is in a range of 5×10 13 atoms/cm 3 to 1×10 17 atoms/cm 3 ,

forming the third well region is performed such that the average dopant concentration of the third well region is in a range of 1×10 14 atoms/cm 3 to 5×10 17 atoms/cm 3 ,

forming the first contact region is performed such that the peak dopant concentration of the first contact region is at least 1×10 19 atoms/cm 3 ,

forming the second contact region is performed such that the peak dopant concentration of the second contact region is at least 1×10 19 atoms/cm 3 , and

forming the third contact region is performed such that the peak dopant concentration of the third contact region is at least 1×10 19 atoms/cm 3 ,

the process further comprises:

forming a first conductive member in contact with the first contact region, wherein a first ohmic contact is formed between the first conductive member and the first contact region;

forming a second conductive member in contact with the second contact region, wherein a second ohmic contact is formed between the second conductive member and the second contact region;

forming a third conductive member in contact with the third contact region, wherein a third ohmic contact is formed between the third conductive member and the third contact region; and

forming a second metal-insulator-semiconductor field-effect transistor including a channel region within a portion of a fifth well region having the first conductivity type, wherein one of the first and second metal-insulator-semiconductor field-effect transistors is an n-channel transistor, and the other of the first and second metal-insulator-semiconductor field-effect transistors is a p-channel transistor, and

forming the first well region, forming the second well region, and forming the fifth well region are formed during a same first doping operation, and forming the third well region and the fourth well region are formed during a same second doping operation.