Semiconductor packages having vias

1. A semiconductor package comprising:

a lower redistribution layer including an insulating pattern having an opening and a via in the opening;

a first semiconductor chip on the lower redistribution layer, the first semiconductor chip including a chip pad on a lower surface of the first semiconductor chip, a passivation layer, disposed directly on the lower surface of the first semiconductor chip, and a pad bump, the pad bump extending through the passivation layer and being connected to the chip pad; and

a first encapsulant on the lower redistribution layer and the first semiconductor chip,

wherein the opening of the insulating pattern defines a lower surface and a side surface of the pad bump, and

wherein the via is in physical contact with the lower surface and the side surface of the pad bump.

2. The semiconductor package according to claim 1 , wherein the via includes:

a central protrusion in physical contact with the lower surface of the pad bump; and

an outer protrusion in physical contact with a lower surface of the passivation layer and the side surface of the pad bump.

3. The semiconductor package according to claim 2 , wherein the via further includes a flange portion on an upper surface of the outer protrusion, the flange portion extending toward the via.

4. The semiconductor package according to claim 2 , wherein the via further includes a flange portion on an upper surface of the outer protrusion, the flange portion extending away from the via.

5. The semiconductor package according to claim 2 , wherein an edge of the outer protrusion in physical contact with the insulating pattern is rounded.

6. The semiconductor package according to claim 2 , wherein the passivation layer includes a recess formed at a location where a portion of the passivation layer meets the outer protrusion, and

wherein the outer protrusion protrudes into the recess.

7. The semiconductor package according to claim 1 , wherein the via physically contacts a portion of the side surface of the pad bump, and

wherein the insulating pattern physically contacts a remaining portion of the side surface of the pad bump.

8. The semiconductor package according to claim 1 , wherein a lower surface of the via has a convex shape extending toward the lower redistribution layer.

9. The semiconductor package according to claim 1 , wherein, in a cross-sectional view of the semiconductor package, a horizontal width of a portion of the via in physical contact with the passivation layer is greater than a horizontal width of the pad bump.

10. The semiconductor package according to claim 1 , wherein the via further includes a seed layer conformally formed along an upper surface of the via.

11. The semiconductor package according to claim 10 , wherein the seed layer is on the lower surface and the side surface of the pad bump.

12. The semiconductor package according to claim 10 , wherein the seed layer is on a portion of a lower surface of the passivation layer.

13. The semiconductor package according to claim 1 , further comprising:

a connection member on the lower redistribution layer adjacent to the first semiconductor chip; and

an upper redistribution layer on an upper surface of the first encapsulant and electrically connected to the connection member.

14. The semiconductor package according to claim 13 , further comprising an upper package on the upper redistribution layer including a substrate, a second semiconductor chip, a second encapsulant, and a connection terminal, wherein the upper package is electrically connected to the upper redistribution layer through the connection terminal.

15. A semiconductor package comprising:

a lower redistribution layer including an insulating pattern having a first opening and a second opening, a first via in the first opening, and a second via in the second opening;

a first semiconductor chip on the lower redistribution layer, the first semiconductor chip including a chip pad, a passivation layer, and a pad bump, the pad bump extending through the passivation layer and being connected to the chip pad;

a first encapsulant on the lower redistribution layer and the first semiconductor chip, and

a connection member on the lower redistribution layer adjacent to the first semiconductor chip, the connection member including an insulating layer and a conductive pad between the insulating layer and the lower redistribution layer,

wherein the first opening of the insulating pattern defines a lower surface and a side surface of the pad bump,

the first via is in physical contact with the lower surface and the side surface of the pad bump,

the second opening defines a lower surface and a side surface of the conductive pad, and

the second via is in physical contact with the insulating layer and the lower surface and the side surface of the conductive pad.

16. The semiconductor package according to claim 15 , wherein, in a cross-sectional view of the semiconductor package, a horizontal width of a portion of the second via in physical contact with the insulating layer is greater than a horizontal width of the conductive pad.

17. The semiconductor package according to claim 15 , wherein, in a cross-sectional view of the semiconductor package, the second via and the first via are on a same level.

18. The semiconductor package according to claim 15 , further comprising an upper redistribution layer on an upper surface of the first encapsulant and electrically connected to the connection member.

19. A semiconductor package comprising:

a lower package comprising:

a lower redistribution layer including an insulating pattern having an opening and a via in the opening;

a first semiconductor chip on the lower redistribution layer, the first semiconductor chip including a chip pad, a passivation layer, and a pad bump, the pad bump extending through the passivation layer and being connected to the chip pad;

a connection member on the lower redistribution layer adjacent to the first semiconductor chip;

a first encapsulant on the lower redistribution layer and the first semiconductor chip; and

an upper redistribution layer on an upper surface of the first encapsulant and electrically connected to the connection member,

wherein the opening defines a lower surface and a side surface of the pad bump,

wherein the via is in physical contact with the lower surface and the side surface of the pad bump,

wherein the via physically contacts a portion of the side surface of the pad bump,

wherein the insulating pattern physically contacts a remaining portion of the side surface of the pad bump, and

wherein the via includes a central protrusion in physical contact with the lower surface of the pad bump; and an outer protrusion in physical contact with a lower surface of the passivation layer and the side surface of the pad bump.

20. The semiconductor package according to claim 19 , wherein, in a cross-sectional view of the semiconductor package, a horizontal width of a portion of the via in physical contact with the passivation layer is greater than a horizontal width of the pad bump.