Method and apparatus to mitigate hot electron read disturbs in 3D NAND devices

1. An apparatus comprising control circuitry to:

implement an erase operation on a first deck of a superblock, block or subblock of a three-dimensional (3D) non-volatile memory device to obtain an erased deck;

apply a dummy read pulse to one or more wordlines (WLs) of a second deck of the superblock, block or subblock, wherein the dummy read pulse includes a negative voltage pulse, and wherein the second deck:

includes a plurality of WLs including the one or more WLs, the plurality of WLs distinct from WLs of the first deck;

shares a plurality of pillars of the memory device with the first deck; and

includes memory cells of the non-volatile memory device that are to be read; and

implement, after application of the dummy read pulse to the one or more WLs of the second deck, a read operation on the memory cells of the second deck to read data from the one or more memory cells.

2. The apparatus of claim 1 , wherein the control circuitry is to implement an erase-suspend operation on the first deck prior to applying the dummy read pulse on the second deck.

3. The apparatus of claim 1 , wherein the control circuitry is to one of:

apply the dummy read pulse immediately after a start of the erase operation; or

apply the dummy read pulse in response to a determination that the read operation is to be implemented.

4. The apparatus of claim 1 , wherein the control circuitry is to one of:

apply the read dummy pulse to all WLs of the superblock, block or subblock including WLs of the first deck and of the second deck;

apply the read dummy pulse to only WLs of the one or more memory cells of the second deck;

apply dummy read pulse to all WLs of all to-be-read decks of the superblock, block or subblock; or

apply dummy read pulse to WLs of decks of the memory device providing a path to a source or drain of the superblock, block or subblock.

5. The apparatus of claim 1 , wherein the control circuitry is to apply the dummy read pulse to the one or more WLs of the second deck after a plurality of erase and read cycles with respect to the superblock, block or subblock, each erase and read cycle including an erase operation on a deck of the superblock, block or subblock that shares a pillar of the memory device with the one or more memory cells, and a read operation on one or more memory cells of the second deck.

6. A system including:

a three-dimensional non-volatile memory device a superblock, block or subblock including:

a plurality of decks stacked with respect to one another, each of the decks including a corresponding set of wordlines (WLs) and a corresponding set of interlayer dielectrics interposed between pairs of the corresponding set of WLs; and

a plurality of pillars intersecting the wordlines and defining a plurality of memory cells therewith; and

a controller coupled to the memory device, the controller to:

implement an erase operation on a first deck of the superblock, block or subblock to obtain an erased deck;

apply a dummy read pulse to one or more wordlines (WLs) of a second deck of the superblock, block or subblock, wherein the dummy read pulse includes a negative voltage pulse, and wherein the second deck:

includes a plurality of WLs including the one or more WLs, the plurality of WLs distinct from WLs of the first deck;

shares a plurality of pillars of the memory device with the first deck; and

includes memory cells of the non-volatile memory device that are to be read; and

implement, after application of the dummy read pulse to the one or more WLs of the second deck, a read operation on the memory cells of the second deck to read data from the one or more memory cells.

7. The system of claim 6 , wherein the controller is to apply the dummy read pulse at regular intervals after a predetermined number of erase and read cycles have been completed with respect to the superblock, block or subblock.

8. The system of claim 7 , wherein the predetermined number includes a number from 500 cycles up to 1000 cycles.

9. A method including:

implementing an erase operation on a first deck of a superblock, block or subblock of a three-dimensional (3D) non-volatile memory device to obtain an erased deck;

applying a dummy read pulse to one or more wordlines (WLs) of a second deck of the superblock, block or subblock, wherein the dummy read pulse includes a negative voltage pulse, and wherein the second deck:

includes a plurality of WLs including the one or more WLs, the plurality of WLs distinct from WLs of the first deck;

shares a plurality of pillars of the memory device with the first deck; and

includes memory cells of the non-volatile memory device that are to be read; and

implementing, after application of the dummy read pulse to the one or more WLs of the second deck, a read operation on the memory cells of the second deck to read data from the one or more memory cells.

10. The method of claim 9 , further including implementing an erase-suspend operation on the first deck being erased prior to applying the dummy read pulse on the second deck.

11. The method of claim 9 , further including applying the dummy read pulse immediately after a start of the erase operation.

12. The method of claim 9 , further including applying the dummy read pulse in response to a determination that the read operation is to be implemented.

13. The method of claim 9 , further including applying the dummy read pulse to all WLs of the superblock, block or subblock including WLs of the erased deck and of the to-be-read deck.

14. The method of claim 9 , further including applying the dummy read pulse to only WLs of the second deck.

15. The method of claim 9 , further including applying the dummy read pulse to all WLs of all to-be-read decks of the superblock, block or subblock.

16. The method of claim 9 , further including applying the dummy read pulse to WLs of decks of the memory device providing a path to a source or drain of the superblock, block or subblock.

17. The method of claim 9 , further including applying the dummy read pulse to the one or more WLs of the second deck after a plurality of erase and read cycles with respect to the superblock, block or subblock, each erase and read cycle including an erase operation on a deck of the superblock, block or subblock that shares a pillar of the memory device with the one or more memory cells, and a read operation on one or more memory cells of the second deck.

18. The method of claim 17 , further including applying the dummy read pulse to the one or more WLs of the second deck at regular intervals after a predetermined number of erase and read cycles have been completed with respect to the superblock, block or subblock.

19. A non-transitory machine-readable storage medium having instructions stored thereon, the instructions when executed by a machine to cause the machine to:

implement an erase operation on a first deck of a superblock, block or subblock of a three-dimensional (3D) non-volatile memory device to obtain an erased deck;

apply a dummy read pulse to one or more wordlines (WLs) of a second deck of the superblock, block or subblock, wherein the dummy read pulse includes a negative voltage pulse, and wherein the second deck:

includes a plurality of WLs including the one or more WLs, the plurality of WLs distinct from WLs of the first deck;

shares a plurality of pillars of the memory device with the first deck; and

includes memory cells of the non-volatile memory device that are to be read; and

implement, after application of the dummy read pulse to the one or more WLs of the second deck, a read operation on the memory cells of the second deck to read data from the one or more memory cells.

20. The machine-readable storage medium of claim 19 , wherein the instructions are to cause the machine to one of:

apply the read dummy pulse to all WLs of the superblock, block or subblock including WLs of the first deck and of the second deck;

apply the read dummy pulse to only WLs of the one or more memory cells of the second deck;

apply dummy read pulse to all WLs of all to-be-read decks of the superblock, block or subblock; or

apply dummy read pulse to WLs of decks of the memory device providing a path to a source or drain of the superblock, block or subblock.