High-electron-mobility transistor (HEMT) semiconductor devices with reduced dynamic resistance
A semiconductor device includes a carrier generation layer disposed on a channel layer, a source contact and a drain contact disposed on the carrier generation layer, and a gate contact disposed between the source contact and the drain contact. The semiconductor device further includes a number N of conductive stripes disposed directly on the carrier generation layer in an area between the drain contact and the gate contact, and a number M of conductive transverse stripes disposed directly on the carrier generation layer in the area between the drain contact and the gate contact. Each of the N conductive stripes extends from and is electrically coupled to the drain contact. Each of the M conductive transverse stripes is aligned non-parallel to the N conductive stripes and is not in direct physical contact with the N conductive stripes.
1. A semiconductor device, comprising:
a channel layer;
a carrier generation layer disposed on the channel layer;
a source contact disposed on the carrier generation layer;
a drain contact disposed on the carrier generation layer;
a gate contact disposed between the source contact and the drain contact;
a number N of conductive stripes disposed directly on the carrier generation layer in an area between the drain contact and the gate contact, each of the N conductive stripes extending from and being electrically coupled to the drain contact; and
a number M of conductive transverse stripes disposed directly on the carrier generation layer in the area between the drain contact and the gate contact, each of the M conductive transverse stripes being aligned non-parallel to the N conductive stripes and not in direct physical contact with the N conductive stripes,
wherein the number N of the conductive stripes and the number M of the conductive transverse stripes are unequal numbers.
2. The semiconductor device of claim 1 , wherein the number N is greater than the number M.
3. The semiconductor device of claim 1 , wherein at least one of the N conductive stripes extending from drain contact has a rectangular shape with a longitudinal length substantially aligned with a direction from the drain contact to the gate contact.
4. The semiconductor device of claim 1 , wherein at least one of the M conductive stripes disposed directly on the carrier generation layer in the area between the N conductive stripes and the gate contact has a rectangular shape with a longitudinal length substantially aligned with a direction from the drain contact to the gate contact.
5. The semiconductor device of claim 1 , wherein at least one of the M conductive stripes disposed in the area between the N conductive stripes and the gate contact is in direct electrical connection with the drain contact through an intervening metal layer.
6. The semiconductor device of claim 1 , further comprising:
a field plate coupled to the M conductive transverse stripes.
7. A semiconductor device, comprising:
a channel layer;
a carrier generation layer disposed on the channel layer;
a source contact disposed on the carrier generation layer;
a drain contact disposed on the carrier generation layer;
a gate contact disposed between the source contact and the drain contact;
a plurality of conductive stripes disposed on the carrier generation layer in direct contact with the carrier generation layer and electrically coupled with the drain contact; and
a multiplicity of conductive transverse stripes disposed directly on the carrier generation layer in an area between the plurality of conductive stripes and the gate contact, the multiplicity of conductive transverse stripes not being in direct physical contact with the plurality of conductive stripes, at least one of the multiplicity of conductive transverse stripes having a curved shape.
8. The semiconductor device of claim 7 , wherein the curved shape has a concave portion facing toward the drain contact.
9. The semiconductor device of claim 7 , wherein one or more of the multiplicity of conductive transverse stripes are aligned with one or more of the plurality of conductive stripes.
10. The semiconductor device of claim 7 , wherein one or more of the plurality of conductive stripes are aligned with spaces between the conductive transverse stripes.
11. A semiconductor device, comprising:
a channel layer;
a carrier generation layer disposed on the channel layer;
a source contact disposed on the carrier generation layer;
a drain contact disposed on the carrier generation layer;
a gate contact disposed between the source contact and the drain contact; and
a plurality of conductive stripes electrically coupled with the drain contact, the plurality of conductive stripes disposed entirely below the drain contact in direct contact with the carrier generation layer, each of the plurality of conductive stripes being made of a pGaN material.
12. The semiconductor device of claim 11 , wherein each of the plurality of conductive stripes disposed entirely below drain contact has a length that is less than or equal to a width of the drain contact.
13. The semiconductor device of claim 11 , wherein, wherein a portion of the drain contact between two adjacent conductive stripes forms an Ohmic contact with the carrier generation layer.
14. A semiconductor device, comprising:
a channel layer;
a carrier generation layer disposed on the channel layer;
a source contact disposed on the carrier generation layer;
a drain contact disposed on the carrier generation layer;
a gate contact disposed between the source contact and the drain contact;
a plurality of conductive stripes disposed directly on the carrier generation layer, each of the plurality of conductive stripes extending from the drain contact and electrically coupled with the drain contact; and
a field plate coupled to one or more of the plurality of conductive stripes, the field plate configured to redistribute an electric field associated with the plurality of conductive stripes.
15. The semiconductor device of claim 14 , wherein the field plate includes recesses that are shaped to re-direct portions of the electric field.
16. The semiconductor device of claim 15 , wherein one or more of the recesses have a trapezoidal shape.
17. The semiconductor device of claim 15 , wherein one or more of the recesses have a semi-circular shape or a rectangular shape.
18. The semiconductor device of claim 14 , wherein the field plate is coupled to the drain contact via a metal layer.
19. The semiconductor device of claim 14 , wherein the field plate is made of a same metal as the gate contact.