Scattering structures for single-photon avalanche diodes
An imaging device may include single-photon avalanche diodes (SPADs). To improve the sensitivity and signal-to-noise ratio of the SPADs, light scattering structures may be formed in the semiconductor substrate to increase the path length of incident light through the semiconductor substrate. The light scattering structures may include a low-index material formed in trenches in the semiconductor substrate. The light scattering structures may have different sizes and/or a layout with a non-uniform number of structures per unit area. SPAD devices may also include isolation structures in a ring around the SPADs to prevent crosstalk. The isolation structures may include metal-filled deep trench isolation structures. The metal filler may include tungsten.
1. A semiconductor device comprising:
a substrate;
a single-photon avalanche diode formed in the substrate;
an isolation structure formed around a periphery of the single-photon avalanche diode, wherein the isolation structure comprises a metal filler in a trench;
a plurality of light scattering structures formed in the substrate over the single-photon avalanche diode, wherein the plurality of light scattering structures comprises a first light scattering structure that reaches a first depth in the substrate and a second light scattering structure that reaches a second depth in the substrate and wherein the first depth is greater than the second depth;
a passivation layer in the trench that is interposed between the metal filler and the substrate; and
a buffer layer in the trench that is interposed between the metal filler and the passivation layer.
2. The semiconductor device defined in claim 1 , wherein the isolation structure comprises a front side deep trench isolation structure.
3. The semiconductor device defined in claim 2 , wherein the substrate has a thickness, wherein the trench has a depth, and wherein the depth of the trench is less than the thickness of the substrate.
4. The semiconductor device defined in claim 2 , wherein the substrate has first and second opposing surfaces and wherein the front side deep trench isolation structure extends entirely through the substrate from the first surface to the second surface.
5. The semiconductor device defined in claim 1 , wherein the isolation structure comprises a backside deep trench isolation structure.
6. The semiconductor device defined in claim 5 , wherein the substrate has first and second opposing surfaces and wherein the backside deep trench isolation structure extends entirely through the substrate from the first surface to the second surface.
7. The semiconductor device defined in claim 1 , wherein the metal filler comprises tungsten.
8. The semiconductor device defined in claim 5 , wherein each one of the plurality of light scattering structures comprises a portion of the passivation layer formed in a respective trench.
9. The semiconductor device defined in claim 8 , wherein each one of the plurality of light scattering structures comprises a portion of the buffer layer in its respective trench.
10. The semiconductor device defined in claim 1 , wherein the substrate comprises first and second opposing sides, wherein the plurality of light scattering structures is formed in the first side of the substrate, and wherein the semiconductor device further comprises a reflector adjacent to the second side of the substrate.
11. The semiconductor device defined in claim 10 , wherein the single-photon avalanche diode has a first width and the reflector has a second width that is smaller than the first width.
12. The semiconductor device defined in claim 1 , wherein each one of the plurality of light scattering structures comprises a trench and material formed in the trench that has a lower refractive index than the substrate.
13. The semiconductor device defined in claim 1 , wherein the plurality of light scattering structures has a non-uniform density over the single-photon avalanche diode.
14. The semiconductor device defined in claim 1 , wherein the first light scattering structure has a first width, wherein the second light scattering structure has a second width, and wherein the first width is greater than the second width.
15. The semiconductor device defined in claim 14 , wherein the plurality of light scattering structures comprises a third light scattering structure that reaches a third depth in the substrate and that has a third width, wherein the third width is between the first and second widths, and wherein the third depth is between the first and second depths.
16. A semiconductor device comprising:
a substrate;
a single-photon avalanche diode formed in the substrate;
a deep trench isolation structure that extends in a ring around the single-photon avalanche diode; and
a plurality of light scattering structures formed in the substrate over the single-photon avalanche diode, wherein the plurality of light scattering structures comprises a first light scattering structure having a first width and a second light scattering structure having a second width that is different than the first width;
wherein the single-photon avalanche diode has a first portion having a third width and a second portion having a fourth width, wherein the fourth width is less than the third width, wherein the first and second portions overlap; and
wherein the first light scattering structure overlaps only the first portion, and wherein the second light scattering structure overlaps both the first and second portions.
17. A semiconductor device comprising:
a substrate;
a single-photon avalanche diode formed in the substrate;
a front side deep trench isolation structure that extends in a ring around the single-photon avalanche diode; and
a plurality of light scattering structures formed in the substrate over the single-photon avalanche diode, wherein the plurality of light scattering structures has a non-uniform number of light scattering structures per unit area over the single-photon avalanche diode.
18. The semiconductor device defined in claim 17 , wherein the substrate has a thickness, wherein the front side deep trench isolation structure includes material in a trench, wherein the trench has a depth, and wherein the depth of the trench is less than the thickness of the substrate.