Semiconductor devices with single-photon avalanche diodes and light scattering structures with different densities
An imaging device may include single-photon avalanche diodes (SPADs). To improve the sensitivity and signal-to-noise ratio of the SPADs, light scattering structures may be formed in the semiconductor substrate to increase the path length of incident light through the semiconductor substrate. The light scattering structures may include a low-index material formed in trenches in the semiconductor substrate. One or more microlenses may focus light onto the semiconductor substrate. Areas of the semiconductor substrate that receive more light from the microlenses may have a higher density of light scattering structures to optimize light scattering while mitigating dark current.
1. A semiconductor device comprising:
a substrate;
a single-photon avalanche diode formed in the substrate;
a microlens formed over the substrate, wherein the microlens is configured to focus a first amount of light to a first portion of the substrate and a second amount of light to a second portion of the substrate and wherein the second amount is greater than the first amount; and
a plurality of light scattering structures in the substrate, wherein the light scattering structures have a first density in the first portion of the substrate and a second density in the second portion of the substrate and wherein the second density is greater than the first density.
2. The semiconductor device defined in claim 1 , wherein the microlens is a toroidal microlens.
3. The semiconductor device defined in claim 2 , wherein the toroidal microlens has a central opening and wherein the semiconductor device includes an additional microlens that is formed in the central opening.
4. The semiconductor device defined in claim 2 , wherein the toroidal microlens has a central opening, wherein the first portion of the substrate is overlapped by the central opening, and wherein the second portion of the substrate is not overlapped by the central opening.
5. The semiconductor device defined in claim 1 , wherein the first density is a non-zero density.
6. The semiconductor device defined in claim 1 , wherein the first density is zero.
7. The semiconductor device defined in claim 1 , wherein each one of the plurality of light scattering structures comprises a trench in a surface of the substrate and material formed in the trench that has a lower refractive index than the substrate.
8. The semiconductor device defined in claim 7 , wherein the trenches of the plurality of light scattering structures have sidewalls that are at non-orthogonal angles relative to the surface of the substrate.
9. The semiconductor device defined in claim 7 , wherein the trenches of the plurality of light scattering structures have sidewalls that are at orthogonal angles relative to the surface of the substrate.
10. The semiconductor device defined in claim 7 , wherein the material formed in the trench comprises a passivation layer and a buffer layer.
11. The semiconductor device defined in claim 1 , wherein the plurality of light scattering structures comprises a first light scattering structure having a first width and a second light scattering structure having a second width that is different than the first width.
12. The semiconductor device defined in claim 1 , wherein the second portion of the substrate forms a ring around the first portion of the substrate.
13. The semiconductor device defined in claim 1 , wherein the first portion of the substrate forms a ring around the second portion of the substrate.
14. A semiconductor device comprising:
a substrate;
a plurality of light scattering structures formed in trenches in the substrate; and
a single-photon avalanche diode formed in the substrate, wherein a first portion of the single-photon avalanche diode is overlapped by the plurality of light scattering structures and a second portion of the single-photon avalanche diode is not overlapped by any light scattering structures in the substrate.
15. The semiconductor device defined in claim 14 , wherein the first portion of the single-photon avalanche diode is a central portion of the single-photon avalanche diode and the second portion of the single-photon avalanche diode is a peripheral portion of the single-photon avalanche diode.
16. The semiconductor device defined in claim 14 , wherein the first portion of the single-photon avalanche diode is a peripheral portion of the single-photon avalanche diode and the second portion of the single-photon avalanche diode is a central portion of the single-photon avalanche diode.
17. The semiconductor device defined in claim 14 , further comprising:
at least one microlens configured to focus light on the single-photon avalanche diode.
18. The semiconductor device defined in claim 17 , wherein the at least one microlens is configured to focus more light to a portion of the substrate that includes the light scattering structures than an additional portion of the substrate that overlaps the second portion of the single-photon avalanche diode.
19. A semiconductor device comprising:
a semiconductor substrate having first and second opposing surfaces;
a single-photon avalanche diode formed in the semiconductor substrate;
a toroidal microlens formed over the first surface of the semiconductor substrate; and
a plurality of light scattering structures formed in trenches in the first surface of the semiconductor substrate.
20. The semiconductor device defined in claim 19 , wherein the plurality of light scattering structures has a varying density over the single-photon avalanche diode.