Method of depositing carbon-containing material on a surface of a substrate, structure formed using the method, and system for forming the structure
Methods and systems for filling a recess on a surface of a substrate with carbon-containing material are disclosed. Exemplary methods include forming a first carbon layer within the recess, etching a portion of the first carbon layer within the recess, and forming a second carbon layer within the recess. Structures formed using the method or system are also disclosed.
1. A method of filling a recess on a surface of a substrate, the method comprising the steps of:
providing a substrate in a reaction space of a reactor, the substrate comprising a surface comprising a recess;
forming a first carbon layer within the recess, wherein the first carbon layer is initially flowable;
etching a portion of the first carbon layer within the recess; and
forming a second carbon layer within the recess,
wherein the temperature of the reaction chamber during the step of etching a portion of the first carbon layer is between about 20° C. and about 100° C.
2. The method of claim 1 , wherein the second carbon layer is initially flowable.
3. The method of claim 2 , further comprising a step of etching a portion of the second carbon layer.
4. The method of claim 3 , further comprising repeating the steps of forming the second carbon layer and etching the portion of the second carbon layer.
5. The method of claim 3 , wherein one or more of the steps of etching the portion of the first carbon layer and etching the portion of the second carbon layer comprise a plasma-enhanced etch process.
6. The method of claim 5 , wherein an etchant used during one or more of the steps of etching the portion of the first carbon layer and etching the portion of the second carbon layer comprises supplying one or more of oxygen or hydrogen to the reaction space.
7. The method of claim 5 , wherein the step of etching a portion of the first carbon layer comprises etching the first carbon layer until a surface of the first carbon layer within the recess is below the top surface.
8. The method of claim 1 , further comprising a step of forming a third carbon layer overlying the second carbon layer.
9. The method of claim 8 , wherein the third carbon layer is formed using one or more of plasma-enhanced chemical vapor deposition, plasma-enhanced atomic layer deposition, and a hybrid chemical vapor deposition and atomic layer deposition process.
10. The method of claim 8 , wherein one or more of the steps of forming the first carbon layer, forming the second carbon layer, and forming the third carbon layer comprise providing a precursor represented by the formula C x H y N z , where x is a natural number greater than or equal to 2, y is a natural number, and z is zero or a natural number.
11. The method of claim 10 , wherein one or more of the steps of forming the first carbon layer, forming the second carbon layer, and forming the third carbon layer further comprise:
after providing the precursor, purging the reaction chamber;
after purging the reaction chamber, providing a reactant;
exposing the reactant to a plasma to form an activated species from the reactant; and
exposing the activated species to the substrate.
12. The method of claim 11 , wherein the reactant is continuously flowed into the reaction chamber through the steps of providing the reactant, exposing the reactant to the plasma, and exposing the activated species to the substrate, and wherein the step of exposing the reactant to the plasma comprises periodically turning the plasma on and off.
13. The method of claim 8 , wherein one or more of the steps of forming the first carbon layer, forming the second carbon layer, and forming the third carbon layer comprise providing a precursor comprising a chain or cyclic molecule having two or more carbon atoms and one or more hydrogen atoms.
14. The method of claim 8 , wherein a temperature within the reaction space during one or more of the steps of forming the first carbon layer, forming the second carbon layer, and forming the third carbon layer is less than 100° C.
15. The method of claim 8 , wherein one or more of the steps of forming the first carbon layer, forming the second carbon layer, and forming the third carbon layer comprise a plasma treatment step, wherein the plasma treatment step comprises exposing one or more of the first carbon layer, the second carbon layer, and the third carbon layer to species formed using one or more of a direct plasma and a remote plasma.
16. The method of claim 15 , wherein the species are formed from one or more of argon, helium, nitrogen, and hydrogen.
17. The method of claim 16 , wherein the temperature of the reaction chamber during the plasma treatment step is between about 20° C. and about 100° C.
18. The method of claim 1 , wherein the first carbon layer fills the recess to at least a top surface of the substrate.
19. The method of claim 1 , wherein the second carbon layer fills the recess to at least a top surface of the substrate.
20. The method of claim 1 , wherein the step of etching a portion of the second carbon layer comprises etching the second carbon layer until a surface of the second carbon layer within the recess is below the top surface.
21. The method of claim 1 , wherein the first carbon layer and second carbon layer are formed using one or more of plasma-enhanced chemical vapor deposition, plasma-enhanced atomic layer deposition, and a hybrid chemical vapor deposition and atomic layer deposition process.
22. The method of claim 21 , wherein one or more of plasma-enhanced chemical vapor deposition, plasma-enhanced atomic layer deposition, and a hybrid chemical vapor deposition and atomic layer deposition process comprise providing argon or helium dilution gas for igniting and sustaining the plasma.