SEMICONDUCTOR DEVICE, OPTICAL PRINT HEAD AND IMAGE FORMING APPARATUS THEREWITH
A semiconductor device includes a base material and light emitting elements (or LEE) aligned in a first direction on the base material. Among the LEEs, a first LEE is provided with a first semiconductor multilayer structure and a first organic insulating film. Among the LEEs, a second LEE is provided with a second semiconductor multilayer structure and a second organic insulating film. A first multilayer structure width is smaller than a second multilayer structure width that is the first direction width of the second semiconductor multilayer structure, a first multilayer structure thickness is narrower than a second multilayer structure thickness, and a first film thickness is greater than a second film thickness wherein the first film thickness is a thickness of a portion of the first organic insulating film and a second film thickness is a thickness of a portion of the second organic insulating film.
1 . A semiconductor device, comprising:
a base material, and
a plurality of light emitting elements aligned in a first direction on the base material, wherein
among the light emitting elements, a first light emitting element that is one light emitting element, which is positioned closest to a base material end part that is an end part of the base material in the first direction, is provided with
a first semiconductor multilayer structure and
a first organic insulating film covering at least side faces of the first semiconductor multilayer structure in the first direction,
among the light emitting elements, a second light emitting element that is a different light emitting element from the first light emitting element is provided with
a second semiconductor multilayer structure and
a second organic insulating film covering at least side faces of the second semiconductor multilayer structure in the first direction,
a first multilayer structure width that is the first direction width of the first semiconductor multilayer structure is smaller than a second multilayer structure width that is the first direction width of the second semiconductor multilayer structure,
a first multilayer structure thickness is narrower than a second multilayer structure thickness wherein the first multilayer structure thickness is a thickness of the first semiconductor multilayer structure determined in the first direction, and the second multilayer structure thickness is a thickness of the second semiconductor multilayer structure determined in the first direction, and
a first film thickness is greater than a second film thickness wherein the first film thickness is a thickness of a portion of the first organic insulating film that covers one of the side faces of the first semiconductor multilayer structure, which is closer to the base material end part than the other of the side faces, and the second film thickness is a thickness of a portion of the second organic insulating film that covers one of the side faces of the second semiconductor multilayer structure, which is closer to the base material end part that the other of the side faces.
2 . The semiconductor device according to claim 1 , wherein
a first element width that is the first direction width of the first light emitting element is ranged within a ±10% range of a second element width that is the first direction width of the second light emitting element.
3 . The semiconductor device according to claim 1 , wherein
the first film thickness is greater than a third film thickness that is a thickness of a portion of the first organic insulating film that covers the other of the side faces of the first semiconductor multilayer structure, which is farther from the base material end part than the one of the side faces.
4 . The semiconductor device according to claim 2 , wherein
the first organic insulating film is provided with a first portion covering an upper face of the first semiconductor multilayer structure,
the second organic insulating film is provided with a second portion covering an upper face of the second semiconductor multilayer structure,
the first element width is a width of an upper face of the first portion in the first direction, and
the second element width is a width of an upper face of the second portion in the first direction.
5 . The semiconductor device according to claim 1 , wherein
the first light emitting element and the second light emitting element are light emitting thyristors.
6 . The semiconductor device according to claim 5 , wherein
the first semiconductor multilayer structure is provided with
a first semiconductor layer of a first conductive type,
a second semiconductor layer of a second conductive type that is different from the first conductive type,
a third semiconductor layer of the first conductive type, and
a fourth semiconductor layer of the second conductive type wherein the first to fourth semiconductor layers are stacked sequentially in this order on the base material,
the second semiconductor multilayer structure is provided with
a fifth semiconductor layer of the first conductive type,
a sixth semiconductor layer of the second conductive type,
a seventh semiconductor layer of the first conductive type, and
an eighth semiconductor layer of the second conductive type wherein the fifth to eighth semiconductor layers are stacked sequentially in this order on the base material,
a first distance is smaller than a second distance wherein
the first distance is defined between a first face, which includes an end face of the third semiconductor layer on one side close to the base material end part, and a second face, which includes an end face of the fourth semiconductor layer on one side close to the base material end part,
the second distance is defined between a third face, which includes an end face of the third semiconductor layer on one side far from the base material end part, and a fourth face, which includes an end face of the fourth semiconductor layer on one side far from the base material end part,
a third distance is equal to a fourth distance wherein
the third distance is defined between a fifth face, which includes an end face of the seventh semiconductor layer on one side in the first direction, and a sixth face, which includes an end face of the eighth semiconductor layer on the one side, and
the fourth distance is defined between a seventh face, which includes an end face of the seventh semiconductor layer on the other side opposite to the one side, and an eighth face, which includes an end face of the eighth semiconductor layer on the other side, and
the second distance is equal to the third distance.
7 . The semiconductor device according to claim 5 , wherein
the first semiconductor multilayer structure is provided with
a first semiconductor layer of a first conductive type,
a second semiconductor layer of a second conductive type that is different from the first conductive type,
a third semiconductor layer of the first conductive type, and
a fourth semiconductor layer of the second conductive type wherein the first to fourth semiconductor layers are stacked sequentially in this order on the base material,
the second semiconductor multilayer structure is provided with
a fifth semiconductor layer of the first conductive type,
a sixth semiconductor layer of the second conductive type,
a seventh semiconductor layer of the first conductive type, and
an eighth semiconductor layer of the second conductive type wherein the fifth to eighth semiconductor layers are stacked sequentially in this order on the base material,
a first distance is smaller than a second distance wherein
the first distance is defined between a first face, which includes an end face of the second semiconductor layer on one side close to the base material end part, and a second face, which includes an end face of the fourth semiconductor layer on one side close to the base material end part, and
the second distance is defined between a third face, which includes an end face of the second semiconductor layer on one side far from the base material end part, and a fourth face, which includes an end face of the fourth semiconductor layer on one side far from the base material end part,
a third distance is equal to a fourth distance wherein
the third distance is defined between a fifth face, which includes an end face of the sixth semiconductor layer on one side in the first direction, and a sixth face, which includes an end face of the eighth semiconductor layer on the one side,
the fourth distance is defined between a seventh face, which includes an end face of the sixth semiconductor layer on the other side opposite to the one side, and an eighth face, which includes an end face of the eighth semiconductor layer on the other side, and
the second distance is equal to the third distance.
8 . The semiconductor according to claim 6 , wherein
the first conductive type is the N type, and
the second conductive type is the P type.
9 . The semiconductor according to claim 7 , wherein
the first conductive type is the N type, and
the second conductive type is the P type.
10 . The semiconductor according to claim 6 , wherein
the first conductive type is the P type, and
the second conductive type is the N type.
11 . The semiconductor according to claim 7 , wherein
the first conductive type is the P type, and
the second conductive type is the N type.
12 . The semiconductor device according to claim 1 , wherein
the first light emitting element and the second light emitting element are light emitting diodes.
13 . The semiconductor device according to claim 1 , wherein
the first organic insulating film and the second organic insulating film are formed of polyimide.
14 . The semiconductor device according to claim 1 , wherein
the base material is in a rectangle shape in a top view, having a longer side extending in a longitudinal direction and a shorter side extending in a lateral direction perpendicular to the longitudinal direction, and
the first direction is the longitudinal direction of the base material.
15 . The semiconductor device according to claim 1 , wherein
the first light emitting element is in a planar shape, and the second light emitting element is in a planer shape,
the planner shape of the first light emitting element is identical to the planar shape of the second light emitting element.
16 . An optical print head, comprising:
a substrate, and
a semiconductor device array, wherein
a plurality of the semiconductor devices according to claim 1 is aligned on the substrate.
17 . An image forming apparatus, comprising:
the optical print head according to claim 14 .