Full spectrum white light emitting devices
A full spectrum light emitting device includes photoluminescence materials which generate light with a peak emission wavelength in a range 490 nm to 680 nm (green to red) and a broadband solid-state excitation source operable to generate broadband blue excitation light with a dominant wavelength in a range from 420 nm to 470 nm, where the broadband blue excitation light includes at least two different blue light emissions in a wavelength range 420 nm to 480 nm.
1. A full spectrum white light emitting device comprising:
photoluminescence materials which generate light with a peak emission wavelength from 490 nm to 680 nm; and
a broadband solid-state excitation source that generates broadband excitation light with a dominant wavelength from 420 nm to 480 nm,
wherein the broadband excitation light is composed of a combination of at least three different dominant wavelength narrowband light emissions of dominant wavelength from 420 nm to 480 nm, and
wherein the broadband solid-state excitation source comprises:
at least three narrowband solid-state light sources or
a single solid-state light source having at least three quantum wells each generating a light of a different dominant wavelength, wherein the single solid-state light source generates broadband excitation light with a FWHM of: at least 30 nm, from 30 nm to 50 nm, from 35 nm to 50 nm, from 40 nm to 50 nm, or from 45 nm to 50 nm.
2. The light emitting device of claim 1 , wherein the device generates white light with a color temperature from 2500 K to 3800K and has a LE of at least 224 lm/W opt .
3. The light emitting device of claim 1 , wherein the device generates white light with a color temperature from 4000 K to 5000K and has a LE of at least 256 lm/W opt .
4. The light emitting device of claim 1 , wherein the device generates white light with a color temperature of at least 6500K and has a LE of at least 305 lm/W opt .
5. The light emitting device of claim 1 , wherein the at least three narrowband solid-state light sources generate broadband excitation light with a FWHM of: at least 30 nm, from 30 nm to 50 nm, from 35 nm to 50 nm, from 40 nm to 50 nm, or from 45 nm to 50 nm.
6. The light emitting device of claim 1 , wherein a wavelength difference between the at least three narrowband light emissions is: at least 5 nm or at least 10 nm.
7. The light emitting device of claim 1 , wherein the photoluminescence materials comprise:
a first photoluminescence material which generates light with a peak emission wavelength from 490 nm to 550 nm; and
a second photoluminescence material which generates light with a peak emission wavelength from 600 nm to 680 nm.
8. The light emitting device of claim 1 , wherein the device generates white light with a CRI Ra of at least 80.
9. The light emitting device of claim 1 , wherein the device generates white light with a CRI Ra of at least 95.
10. The light emitting device of claim 1 , wherein the device generates white light with each of CRI R1 to CRI R15 of at least 90.
11. The light emitting device of claim 1 , wherein the device is one of a surface mountable device, chip on board, and packaged light emitting device.
12. The light emitting device of claim 1 , wherein a wavelength difference across the at least three narrowband light emissions is up to about 20 nm.
13. The light emitting device of claim 12 , wherein a wavelength difference between the at least three narrowband light emissions is: at least 5 nm or at least 10 nm.
14. The light emitting device of claim 13 , wherein the at least three different wavelength quantum wells generate at least three overlapping narrowband light emission peaks.
15. The light emitting device of claim 12 , wherein the at least three narrowband solid-state light sources generate at least three overlapping narrowband light emission peaks.
16. The light emitting device of claim 1 , wherein the device generates white light with a CRI R12 of at least 70 or at least 90.