Systems and methods for coupling qubits in a quantum processor
Josephson junctions (JJ) may replace primary inductance of transformers to realize galvanic coupling between qubits, advantageously reducing size. A long-range symmetric coupler may include a compound JJ (CJJ) positioned at least approximately at a half-way point along the coupler to advantageously provide a higher energy of a first excited state than that of an asymmetric long-range coupler. Quantum processors may include qubits and couplers with a non-stoquastic Hamiltonian to enhance multi-qubit tunneling during annealing. Qubits may include additional shunt capacitances, e.g., to increase overall quality of a total capacitance and improve quantum coherence. A sign and/or magnitude of an effective tunneling amplitude Δ eff of a qubit characterized by a double-well potential energy may advantageously be tuned. Sign-tunable electrostatic coupling of qubits may be implemented, e.g., via resonators, and LC-circuits. YY couplings may be incorporated into a quantum anneaier (e.g., quantum processor).
1. A superconducting integrated circuit comprising:
a first superconducting qubit comprising a first loop of material,
a second superconducting qubit comprising a second loop of material, each of the first and the second loop of material superconductive in a range of temperatures below a respective critical temperature; and
a superconducting coupler comprising:
a compound Josephson junction galvanically communicatively coupled to each of the first and the second loop of material;
a first Josephson inductance comprising a first Josephson junction interrupting the first loop of material; and
a second Josephson inductance comprising a second Josephson junction interrupting the second loop of material, wherein the first superconducting qubit is communicatively coupled to the second superconducting qubit at least in part via the first Josephson inductance and the second Josephson inductance.
2. A circuit comprising:
a first device, the first device comprising:
a first loop, the first loop comprising a material that is superconductive in a range of temperatures below a respective critical temperature, the first loop interrupted by a first Josephson junction; and
a first device inductance in series with the first Josephson junction;
a second device, the second device comprising:
a second loop, the second loop comprising a material that is superconductive in a range of temperatures below a respective critical temperature, the second loop interrupted by a second Josephson junction; and
a second device inductance in series with the second Josephson junction; and
a coupling device comprising a third loop, the third loop comprising a material that is superconductive in a range of temperatures below a respective critical temperature, the third loop interrupted by a third Josephson junction, the third loop comprising a plurality of coupling inductances, each coupling inductance in series with the third Josephson junction, a portion of the third loop shared with a portion of the first loop to form a first common segment, wherein the second device is communicatively coupled to the first device by:
an inductive coupling of the first device inductance to a first one of the plurality of coupling inductances;
an inductive coupling of the second device inductance to a second one of the plurality of coupling inductances; and
a galvanic coupling by the first common segment.
3. The circuit of claim 2 , wherein at least one of the first device and the second device further comprises a third device inductance, the second device communicatively coupled to the first device by:
an inductive coupling of the third device inductance to a third one of the plurality of coupling inductances.
4. The circuit of claim 2 , wherein the third loop further comprises a second common segment, the second common segment in common with the second loop, the second device communicatively coupled to the first device by a coupling that further includes a galvanic coupling by the second common segment.
5. The circuit of claim 4 , wherein at least one of the first device and the second device further comprises a third device inductance, the second device communicatively coupled to the first device by:
an inductive coupling of the third device inductance to a third one of the plurality of coupling inductances.
6. The circuit of claim 2 , wherein the first device is a first qubit, and the second device is a second qubit.
7. The circuit of claim 2 , wherein at least one of the first Josephson junction, the second Josephson junction, and the third Josephson junction is a compound Josephson junction.
8. The circuit of claim 2 , wherein at least one of the first Josephson junction and the second Josephson junction is a compound-compound Josephson junction.
9. The circuit of claim 2 , wherein at least one of the first device inductance, the second device inductance, and the plurality of coupling inductances includes a plurality of inductive segments.
10. A circuit comprising:
a first device, the first device comprising a first loop, the first loop comprising a material that is superconductive in a range of temperatures below a respective critical temperature, the first loop interrupted by a first Josephson junction;
a second device, the second device comprising a second loop, the second loop comprising a material that is superconductive in a range of temperatures below a respective critical temperature, the second loop interrupted by a second Josephson junction; and
a coupling device, the coupling device comprising a third loop, the third loop comprising a material that is superconductive in a range of temperatures below a respective critical temperature, the third loop comprising an ordered sequence of segments, the ordered sequence comprising in order:
a first segment in common with a segment of the first loop;
a second segment interrupted by a third Josephson junction;
a third segment in common with a segment of the second loop; and
a fourth segment interrupted by a fourth Josephson junction, wherein the second device is communicatively coupled to the first device by a galvanic coupling by the first segment and the second segment.
11. The circuit of claim 10 , wherein at least one of the third Josephson junction and the fourth Josephson junction is operable as an L-tuner.
12. The circuit of claim 10 , wherein the first device is a first qubit, and the second device is a second qubit.
13. The circuit of claim 10 , wherein at least one of the first Josephson junction, the second Josephson junction, the third Josephson junction, and the fourth Josephson junction is a compound Josephson junction.
14. The circuit of claim 10 , wherein at least one of the first Josephson junction and the second Josephson junction is a compound-compound Josephson junction.
15. The circuit of claim 10 , wherein at least one of the first device inductance, the second device inductance, the first coupling inductance, and the second coupling inductance includes a plurality of inductive segments.
16. A circuit comprising:
a first device, the first device comprising a first device loop, the first device loop comprising a material that is superconductive in a range of temperatures below a respective critical temperature, the first device loop interrupted by a first Josephson junction, the first device loop comprising a first device inductance;
a second device, the second device comprising a second device loop, the second device loop comprising a material that is superconductive in a range of temperatures below a respective critical temperature, the second device loop interrupted by a second Josephson junction, the second device loop comprising a second device inductance; and
a coupling device comprising:
a first coupling loop comprising a material that is superconductive in a range of temperatures below a respective critical temperature, the first coupling loop interrupted by a third Josephson junction,
the first coupling loop comprising:
a first coupling inductance; and
a first segment in common with a segment of the second device loop,
a second coupling loop comprising:
a second coupling inductance; and
a second segment in common with a segment of the first device loop,
wherein the first coupling loop is inductively communicatively coupled to the first device by the first coupling inductance and the first device inductance, the second coupling loop is inductively communicatively coupled to the second device by the second coupling inductance and the second device inductance, the first coupling loop is galvanically communicatively coupled to the second device by the first segment, and the second coupling loop is galvanically communicatively coupled to the first device by the second segment.
17. The circuit of claim 16 , wherein the first device is a qubit, and the second device is a qubit.
18. The circuit of claim 16 , wherein at least one of the first Josephson junction, the second Josephson junction, and the third Josephson junction is a compound Josephson junction.
19. The circuit of claim 16 , wherein at least one of the first Josephson junction and the second Josephson junction is a compound-compound Josephson junction.
20. The circuit of claim 16 , wherein at least one of the first device inductance, the second device inductance, the first coupling inductance, and the second coupling inductance includes a plurality of inductive segments.