Solid-state imaging element, comparator, and electronic device
A solid-state imaging element of the present disclosure includes: a pixel array in which a plurality of unit pixels is arranged in a matrix shape, the plurality of unit pixels each including a photoelectric conversion unit; and an analog-to-digital conversion unit that converts an analog pixel signal into a digital signal, the analog pixel signal being output from each of the plurality of unit pixels of the pixel array. Then, the analog-to-digital conversion unit includes a comparator that includes a differential input unit and an active load of the differential input unit, the differential input unit using, as an input, a prescribed reference signal and the analog pixel signal. At least one transistor that configures the active load includes a plurality of control terminals that controls current. The plurality of control terminals is electrically connected in common.
1. A solid-state imaging element comprising:
a pixel array in which a plurality of unit pixels is arranged in a matrix shape, the plurality of unit pixels each including a photoelectric conversion unit; and
an analog-to-digital converter configured to convert an analog pixel signal into a digital signal, the analog pixel signal being output from each of the plurality of unit pixels of the pixel array, wherein
the analog-to-digital converter includes a comparator that includes a differential input unit and an active load of the differential input unit, the differential input unit including a first input for receiving a prescribed reference signal and a second input for receiving the analog pixel signal, the active load being connected to the first input and the second input of the differential input unit,
at least one transistor that configures the active load includes a plurality of control terminals that controls current, and
the plurality of control terminals is electrically connected in common.
2. The solid-state imaging element according to claim 1 , wherein
the at least one transistor that configures the active load includes a plurality of field effect transistors that includes the plurality of control terminals.
3. The solid-state imaging element according to claim 2 , wherein,
in the plurality of field effect transistors, drain regions and source regions are alternately connected in series, and all gate terminals are commonized.
4. The solid-state imaging element according to claim 3 , wherein
each of the plurality of field effect transistors are respectively disposed in an identical configured active region.
5. The solid-state imaging element according to claim 4 , wherein
each of the plurality of field effect transistors are respectively connected in series via an active region.
6. The solid-state imaging element according to claim 3 , wherein
each of the plurality of field effect transistors are dispersedly disposed in active regions different from each other, and the active regions different from each other are connected by a wiring line.
7. The solid-state imaging element according to claim 3 , wherein
a dummy gate terminal is disposed in an active region in which the plurality of field effect transistors is not formed.
8. The solid-state imaging element according to claim 1 , wherein
the at least one transistor that configures the active load includes a plurality of bipolar transistors that includes the plurality of control terminals.
9. The solid-state imaging element according to claim 8 , wherein,
in the plurality of bipolar transistors, emitter regions and collector regions are alternately connected in series, and all base terminals are commonized.
10. The solid-state imaging element according to claim 9 , wherein
the plurality of bipolar transistors is dispersedly disposed in active regions different from each other, and is connected in series by a wiring line.
11. solid-state imaging element according to claim 10 , wherein
the plurality of bipolar transistors is connected in series by the wiring line, across the active regions different from each other.
12. The solid-state imaging element according to claim 9 , wherein
the plurality of bipolar transistors is disposed in an identical active region, and a base terminal is commonized among the plurality of bipolar transistors.
13. The solid-state imaging element according to claim 1 , wherein
the at least one transistor that configures the active load includes a Fin-FET.
14. A comparator comprising:
a differential input unit including a first input for receiving a prescribed reference signal and a second input for receiving an analog pixel signal; and
an active load of the differential input unit that is connected to the first input and the second input of the differential input unit, wherein
at least one transistor that configures the active load includes a plurality of control terminals that controls current, and
the plurality of control terminals is electrically connected in common.
15. An electronic device comprising:
a solid-state imaging element including:
a pixel array in which a plurality of unit pixels is arranged in a matrix shape, the plurality of unit pixels each including a photoelectric conversion unit; and
an analog-to-digital converter configured to convert an analog pixel signal into a digital signal, the analog pixel signal being output from each of the plurality of unit pixels of the pixel array, wherein
the analog-to-digital converter includes a comparator that includes a differential input unit and an active load of the differential input unit, the differential input unit including a first input for receiving a prescribed reference signal and a second input for receiving the analog pixel signal, the active load being connected to the first input and the second input of the differential input unit,
at least one transistor that configures the active load includes a plurality of control terminals that controls current, and
the plurality of control terminals is electrically connected in common.