Light-emitting diode and method of manufacturing the same, and display device
View Patent ↗A light-emitting diode includes a first semiconductor layer, a second semiconductor layer, a light-emitting layer disposed between the first semiconductor layer and the second semiconductor layer, and a barrier layer disposed on at least part of a side face of at least one of the first semiconductor layer and the second semiconductor layer. The barrier layer is configured to form a charge depletion region between the barrier layer and the at least part of the side face.
1. A light-emitting diode, comprising:
a first semiconductor layer;
a second semiconductor layer;
a light-emitting layer disposed between the first semiconductor layer and the second semiconductor layer; and
a barrier layer disposed on at least part of a side face of at least one of the first semiconductor layer and
the second semiconductor layer,
wherein the barrier layer is configured to form a charge depletion region between the barrier layer and the at least part of the side face, and a material of the barrier layer includes at least one of metal, conductive metal oxide, graphene, and metallic carbon nanotube;
the first semiconductor layer is a P-type semiconductor layer and the second semiconductor layer is an N-type semiconductor layer;
the barrier layer includes a first barrier layer covering at least part of a side face of the P-type semiconductor layer, and a work function of the first barrier layer is less than a work function of the Ptype semiconductor layer; and
the first barrier layer includes:
a first main body portion covering the side face of the P-type semiconductor layer;
a first extension portion connected to a side of the first main body portion proximate to the light-emitting layer, wherein the first extension portion covers a part of a side face of the light-emitting layer proximate to the P-type semiconductor layer, and a distance exists between the first extension portion and the N-type semiconductor layer in a direction perpendicular to a main surface of the light-emitting layer; and
a second extension portion connected to a side of the first main body portion away from the light-emitting layer, wherein the second extension portion covers an edge of a main surface of the P-type semiconductor layer away from the light-emitting layer.
2. The light-emitting diode according to claim 1 wherein an orthographic projection of the first barrier layer on a main surface of the light-emitting layer has a closed frame shape.
3. The light-emitting diode according to claim 1 wherein the work function of the first barrier layer ranges from 4.0 eV to 5.5 eV.
4. The light-emitting diode according to claim 1 wherein an absolute value of a difference between the work function of the first barrier layer and the work function of the P- type semiconductor layer is greater than or equal to 0.3 eV.
5. The light-emitting diode according to claim 1 wherein a material of the first barrier layer includes at least one of metal, conductive metal oxide, graphene and metallic carbon nanotube.
6. The light-emitting diode according to claim 1 , wherein
the barrier layer further includes a second barrier layer covering at least part of a side face of the N-type semiconductor layer, and a work function of the second barrier layer is greater than a work function of the N-type semiconductor layer.
7. The light-emitting diode according to claim 6 , wherein an orthographic projection of the second barrier layer on a plane determined by the light-emitting layer has a closed frame shape.
8. The light-emitting diode according to claim 6 , wherein the work function of the second barrier layer ranges from 4.5 eV to 5.1 eV.
9. The light-emitting diode according to claim 6 , wherein an absolute value of a difference between the work function of the second barrier layer and the work function of the N-type semiconductor layer is greater than or equal to 0.3 eV.
10. The light-emitting diode according to claim 6 , wherein a material of the second barrier layer includes at least one of metal, conductive metal oxide, graphene and metallic carbon nanotube.
11. The light-emitting diode according to claim 1 , wherein
the barrier layer further includes a second barrier layer covering at least part of a side face of the N-type semiconductor layer; and
a distance exists between the first barrier layer and the second barrier layer in a direction perpendicular to a main surface of the light-emitting layer.
12. The light-emitting diode according to claim 1 , wherein the second semiconductor layer has a main body region and a second electrode placement region, a part of the second semiconductor layer in the main body region overlaps the light-emitting layer and the first semiconductor layer, and a part of the second semiconductor layer in the second electrode placement region does not overlap the light-emitting layer and the first semiconductor layer;
the light-emitting diode further comprises:
a base disposed on a side of the second semiconductor layer away from the light-emitting layer;
a first electrode disposed on a main surface of the first semiconductor layer away from the light- emitting layer: and
a second electrode disposed in the second electrode placement region of the second semiconductor layer.
13. A method of manufacturing a light-emitting diode, comprising:
providing a base;
forming, on the base, a second semiconductor layer, a light-emitting layer and a first semiconductor layer sequentially on top of one another;
patterning the first semiconductor layer to remove a part of the first semiconductor layer at an edge of a light-emitting region of the light-emitting diode;
forming a first barrier film at a side of the base at which the patterned first semiconductor layer has been formed; and
patterning the first barrier film to retain a part of the first barrier film covering a side face of the patterned first semiconductor layer and form a first barrier layer; wherein the first barrier layer is configured to form a charge depletion region between the first barrier layer and the first semiconductor layer.
14. The method according to claim 13 , after the step of patterning the first semiconductor layer, the method further comprising:
etching, by using a mask used for patterning the first semiconductor layer, a part of the light-emitting layer at the edge of the light-emitting region, an etching depth being less than a thickness of the light-emitting layer.
15. The method according to claim 14 , wherein in the step of patterning the first barrier film, a part of the first barrier film covering an edge of a main surface of the patterned first semiconductor layer in the light-emitting region is retained.
16. The method according to claim 13 , before forming the light-emitting layer, the method further comprising:
patterning the second semiconductor layer to remove a part of the second semiconductor layer at the edge of the light-emitting region;
forming a second barrier film at a side of the base on which the patterned second semiconductor layer has been formed; and
patterning the second barrier film to retain a part of the second barrier film covering a side face of the patterned second semiconductor layer and form a second barrier layer; wherein the second barrier layer is configured to form a charge depletion region between the second barrier layer and the second semiconductor layer.
17. A display device, comprising:
a driving substrate; and
a plurality of light-emitting diodes mounted on a side of the driving substrate, each light-emitting diode being a light-emitting diode according to claim 1 , and each light-emitting diode being electrically connected to the driving substrate.