Method for manufacturing semiconductor apparatus
A resin membrane ( 8 ) covering a semiconductor device ( 5 ) and a dicing line ( 7 ) of a semiconductor substrate ( 1 ) is formed on a main surface of the semiconductor substrate ( 1 ). The resin membrane ( 8 ) around the first electrode ( 2 ) is removed and the resin membrane ( 8 ) on the second electrode ( 3,4 ) is removed to form a first contact hole ( 9 ) without removing the resin membrane ( 8 ) on the dicing line ( 7 ). A resin film ( 11 ) is applied to a top surface of the resin membrane ( 8 ) to form a hollow structure ( 12 ) around the first electrode ( 2 ). The resin film ( 11 ) is patterned to form a second contact hole ( 13 ) connected to the first contact hole ( 9 ) and a first opening ( 14 ) above the dicing line ( 7 ) simultaneously. After forming the first opening ( 14 ), the semiconductor substrate ( 1 ) is diced along the dicing line ( 7 ).
1. A method for manufacturing a semiconductor apparatus comprising:
forming a semiconductor device including first and second electrodes on a main surface of a semiconductor substrate;
forming a resin membrane covering the semiconductor device and a dicing line of the semiconductor substrate on the main surface of the semiconductor substrate;
removing the resin membrane around the first electrode and removing the resin membrane on the second electrode to form a first contact hole without removing the resin membrane on the dicing line;
applying a resin film covering above the first and second electrodes and separated from the first and second electrodes to a top surface of the resin membrane to form a hollow structure around the first electrode;
patterning the resin film to form a second contact hole connected to the first contact hole and a first opening above the dicing line simultaneously;
forming a wiring connected to the second electrode via the first and second contact holes; and
after forming the first opening, dicing the semiconductor substrate along the dicing line.
2. The method for manufacturing a semiconductor apparatus according to claim 1 , wherein after the resin film supported by a support film is applied to a top surface of the resin membrane, the support film is removed from the resin film.
3. The method for manufacturing a semiconductor apparatus according to claim 2 , wherein the first electrode is a Y-shaped or T-shaped gate electrode including overhangs and the hollow structure is also formed under the overhangs of the gate electrode.
4. The method for manufacturing a semiconductor apparatus according to claim 2 , further comprising, after forming the first opening and before dicing the semiconductor substrate, the resin membrane on the dicing line is removed to form a second opening.
5. The method for manufacturing a semiconductor apparatus according to claim 4 , wherein an end part of the first opening is located closer to the semiconductor device side than an end part of the second opening.
6. The method for manufacturing a semiconductor apparatus according to claim 2 , wherein the resin membrane on the dicing line is diced together with the semiconductor substrate.
7. The method for manufacturing a semiconductor apparatus according to claim 1 , wherein the first electrode is a Y-shaped or T-shaped gate electrode including overhangs and the hollow structure is also formed under the overhangs of the gate electrode.
8. The method for manufacturing a semiconductor apparatus according to claim 7 , further comprising, after forming the first opening and before dicing the semiconductor substrate, the resin membrane on the dicing line is removed to form a second opening.
9. The method for manufacturing a semiconductor apparatus according to claim 7 , wherein the resin membrane on the dicing line is diced together with the semiconductor substrate.
10. The method for manufacturing a semiconductor apparatus according to claim 8 , wherein an end part of the first opening is located closer to the semiconductor device side than an end part of the second opening.
11. The method for manufacturing a semiconductor apparatus according to claim 1 , further comprising, after forming the first opening and before dicing the semiconductor substrate, the resin membrane on the dicing line is removed to form a second opening.
12. The method for manufacturing a semiconductor apparatus according to claim 11 , wherein an end part of the first opening is located closer to the semiconductor device side than an end part of the second opening.
13. The method for manufacturing a semiconductor apparatus according to claim 1 , wherein the resin membrane on the dicing line is diced together with the semiconductor substrate.