Memory device equipped with data protection scheme

1. A memory device, comprising:

a hybrid memory portion including a main nonvolatile memory and an auxiliary nonvolatile memory; and

a controller configured to:

store data information in the main nonvolatile memory;

select whether to write the data information directly into the auxiliary nonvolatile memory without accumulating parity information or to write the data information into the main nonvolatile memory while accumulating parity information based on a dimension of the data information to be written in the hybrid memory portion, a type of the data information to be written in the hybrid memory portion, or a combination thereof;

accumulate parity information in the auxiliary nonvolatile memory, the parity information associated with the data information stored in the main nonvolatile memory; and

responsive to completion of accumulating the parity information into the auxiliary nonvolatile memory, transfer the complete parity information from the auxiliary nonvolatile memory to the main nonvolatile memory.

2. The memory device of claim 1 , wherein the accumulated parity information is a Redundant Array of Independent NAND (RAIN) parity calculated by an Exclusive OR (XOR) program.

3. The memory device of claim 1 , wherein the controller comprises:

a front-end configured to interface with a host device; and

a back-end configured to interface with the hybrid memory portion,

wherein the back-end is structured into a first portion adapted to interface with the main nonvolatile memory and a second portion adapted to interface with the auxiliary nonvolatile memory.

4. The memory device of claim 3 , further comprising a parity engine configured to connect the first portion of the back-end with the second portion of the-back end to transfer the complete parity information from the auxiliary nonvolatile memory to the main nonvolatile memory.

5. The memory device of claim 1 , wherein the controller is configured to store the data information in the main nonvolatile memory simultaneously with the accumulation of the parity information in the auxiliary nonvolatile memory.

6. The memory device of claim 1 , wherein the controller is configured to save the complete parity information into the auxiliary nonvolatile memory.

7. The memory device of claim 1 , wherein the main nonvolatile memory comprises a plurality of NAND dies.

8. The memory device of claim 1 , wherein the auxiliary nonvolatile memory is a 3D X Point (3DXP) memory.

9. The memory device of claim 1 , wherein the auxiliary nonvolatile memory is a phase change memory (PCM) or a chalcogenide memory.

10. The memory device of claim 1 , wherein the main nonvolatile memory is configured to implement a low-density parity-check (LDPC) code.

11. The memory device of claim 1 , wherein the auxiliary nonvolatile memory is configured to implement a Bose-Chaudhuri-Hocquenghem (BCH) code.

12. The memory device of claim 1 , comprising:

the hybrid memory portion configured to execute an internal program in response to a program command from the controller;

the auxiliary nonvolatile memory configured to:

store, based on the internal program, the parity information by overwriting old parity information with new parity information according to an Exclusive OR (XOR) program rule; and

execute the internal command to overwrite or keep the old parity information without intervention from the controller,

wherein the previous parity information is associated with first data information stored in the main nonvolatile memory and the updated parity information is associated with second data information different from the first data information.

13. A method for operating a memory device, comprising:

storing data information in a main nonvolatile memory;

selecting, based on the dimension of data to be written, type of data to be written, or a combination thereof, whether to write the data information into the auxiliary nonvolatile memory without accumulating parity information or to write the data information into the main nonvolatile memory while accumulating parity information;

accumulating parity information in an auxiliary nonvolatile memory, the parity information associated with the data information stored in the main nonvolatile memory; and

responsive to completion of accumulating the parity information, transferring the complete parity information from the auxiliary nonvolatile memory to the main nonvolatile memory.

14. The method of claim 13 , comprising simultaneously storing data information in the main nonvolatile memory and accumulating parity information in the auxiliary nonvolatile memory.

15. The method of claim 13 , comprising:

executing, in a memory portion of the memory device, an internal program in response to a program command from a controller, wherein executing the internal program comprises:

the auxiliary nonvolatile memory storing, based on the internal program, the parity information by overwriting old parity information with new parity information according to an Exclusive OR (XOR) program rule; and

the auxiliary nonvolatile memory overwriting or keeping the old parity information without intervention from the controller responsive to the memory system receiving the program command, wherein:

the previous parity information is associated with first data information stored in the main nonvolatile memory; and

the new parity information is associated with second data information different from the first data information, the new parity information included in an accumulated parity sum of data stored in the memory portion for recovering an original data from a corrupted data.

16. The method of claim 15 , comprising:

overwriting the old parity information stored in the auxiliary nonvolatile memory with the new parity information regardless of a value of the old parity information responsive to the new parity information having a first value; and

keeping the old parity information at a same value responsive to the new parity information having a second value different from the first value.

17. The method of claim 13 , comprising

passing the data information saved into the main nonvolatile memory through a data scrambler; and

passing the data information and the accumulated complete parity information through a low-density parity-check (LDPC) encoder in the main nonvolatile memory.

18. An apparatus comprising:

a host device; and

a memory device coupled to the host device, the memory device comprising:

a hybrid memory portion including a main nonvolatile memory and an auxiliary nonvolatile memory; and

a controller configured to store data information into the main nonvolatile memory, and comprising:

a front-end for interfacing with the host;

a back-end for interfacing with the hybrid memory portion and structured into a first portion configured to interface with the main nonvolatile memory and a second portion adapted to interface with the auxiliary nonvolatile memory; and

a parity engine configured to:

connect the first portion of the back-end with the second portion of the back-end;

select, based on the dimension of data to be written, type of data to be written, or a combination thereof, whether to write the data information into the auxiliary nonvolatile memory without accumulating parity information or to write the data information into the main nonvolatile memory while accumulating parity information;

accumulate parity information in the auxiliary nonvolatile memory, the parity information associated with the data information stored in the main nonvolatile memory; and

responsive to completion of accumulation of the parity information into the auxiliary nonvolatile memory, transfer the complete parity information from the auxiliary nonvolatile memory to the main nonvolatile memory.