Sputtering target and magnetic film
Provided is a sputtering target, comprising: from 0.001 mol % to 0.5 mol % of Bi; from 45 mol % or less of Cr; 45 mol % or less of Pt; 60 mol % or less of Ru; and a total of 1 mol % to 35 mol % of at least one metal oxide, the balance being Co and inevitable impurities.
1. A sputtering target comprising a sintered body, the sputtering target having metal phases and oxide phases, and comprising:
from 0.1 mol % to 0.5 mol % of Bi;
at least one of 4 mol % to 45 mol % of Cr and 15 mol % to 35 mol % of Pt;
50 mol % or less of Ru; and
at least one oxide of at least one element selected from the group consisting of Co, Cr, Si, Ti, and B, wherein said at least one oxide has a volume fraction of 12% to 39%,
the balance containing Co and inevitable impurities.
2. The sputtering target according to claim 1 , wherein the sputtering target further comprises from 1 mol % to 30 mol % of at least one selected from the group consisting of Au, Ag, B, Cu, Ge, Ir, Mn, Mo, Nb, Ni, Pd, Re, Rh, Ta, W, and V.
3. A magnetic film for a perpendicular magnetic recording type magnetic recording medium, the magnetic film having metal phases and oxide phases, the magnetic film comprising:
from 0.1 mol % to 0.5 mol % of Bi;
at least one of 4 mol % to 45 mol % of Cr and 15 mol % to 35 mol % of Pt;
50 mol % or less of Ru; and
at least one oxide of at least one element selected from the group consisting of Co, Cr, Si, Ti, and B, wherein said at least one oxide has a volume fraction of 12% to 39%,
the balance containing Co and inevitable impurities,
wherein the magnetic film is formed by performing sputtering using the sputtering target according to claim 1 .
4. The magnetic film according to claim 3 , wherein the magnetic film further comprises from 1 mol % to 30 mol % of at least one selected from the group consisting of Au, Ag, B, Cu, Ge, Ir, Mn, Mo, Nb, Ni, Pd, Re, Rh, Ta, W, and V.