Semiconductor light-emitting device and manufacturing method therefor
Disclosed is a semiconductor light emitting device comprising: a substrate; a first semiconductor layer, which is provided on the substrate and has a first conductivity; an active layer, which is provided on the first semiconductor layer and generates ultraviolet light by electron-hole recombination; a second semiconductor layer, which is provided on the active layer and has a second conductivity different from the first conductivity; a first electrode electrically connected to the first semiconductor layer; a second electrode electrically connected to the second semiconductor layer; a second region that includes a plurality of protruded parts of the active layer and the second semiconductor layer protruded from the first semiconductor layer as seen in cross-sectional view and recesses between the protruded parts; and a first region surrounding the second region.
1. A semiconductor light emitting device comprising:
a substrate;
a first semiconductor layer, which is provided on the substrate and has a first conductivity;
an active layer, which is provided on the first semiconductor layer and generates ultraviolet light by electron-hole recombination;
a second semiconductor layer, which is provided on the active layer and has a second conductivity different from the first conductivity;
a first electrode electrically connected to the first semiconductor layer; and
a second electrode electrically connected to the second semiconductor layer;
wherein the first semiconductor layer surrounds the active layer and the second semiconductor layer,
wherein the active layer and the second semiconductor layer form a perimeter,
wherein a plurality of regions of the active layer, in which the active layer at a predefined distance away from the perimeter does not emit ultraviolet light, are formed,
wherein a passage is present between the regions that has a width smaller than a minimum width of the perimeter passing by the regions,
wherein the perimeter is at the predefined distance away from the regions, and the width of the passage is less than twice the predefined distance, and
wherein the minimum width of the perimeter and the width of the passage each correspond to a length between opposing edges of the perimeter.
2. The semiconductor light emitting device according to claim 1 , wherein the perimeter has junctions, and wherein all of the junctions are rounded.
3. The semiconductor light emitting device according to claim 1 , further comprising:
an insulating layer formed on the first semiconductor layer, the second semiconductor layer and the active layer;
a first pad electrode, which is formed on the insulating layer and electrically connected to the first electrode; and
a second pad electrode, which is formed on the insulating layer and electrically connected to the second electrode.
4. The semiconductor light emitting device according to claim 1 , wherein the active layer has a lateral surface arranged at an obtuse angle with a top surface of the first semiconductor layer.
5. The semiconductor light emitting device according to claim 1 , wherein the second semiconductor layer has a top surface smaller than that of the active layer.
6. The semiconductor light emitting device according to claim 1 , wherein at least one of the regions is present in an area of the perimeter of a maximum width.
7. The semiconductor light emitting device according to claim 1 , wherein the plurality of regions includes a first region, a second region, and a third region, and a passage is formed between the first region and the second region and between the second region and the third region, respectively.
8. The semiconductor light emitting device according to claim 1 , wherein the plurality of regions is formed in a circular shape.
9. The semiconductor light emitting device according to claim 1 , wherein the substrate is a light-transmitting substrate.