Materials for forming a nucleation-inhibiting coating and devices incorporating same
An opto-electronic device includes a substrate, a first electrode disposed over the substrate, a semiconducting layer disposed over the first electrode, a second electrode disposed over the semiconducting layer, the second electrode having a first portion and a second portion, a nucleation inhibition coating disposed over the first portion of the second electrode; and a conductive coating disposed over the second portion of the second electrode, wherein the nucleation inhibition coating is a compound of Formula (I).
1. An opto-electronic device comprising:
a nucleation inhibition coating (NIC) disposed on a first layer surface of the device in a first portion of a lateral aspect thereof; and
a conductive coating disposed on a second layer surface of the device in a second portion of the lateral aspect thereof; and
wherein:
the NIC comprises a compound of Formula (I)
wherein at least two of X 1 to X 10 are each independently selected from the group consisting of: (I-A), (I-B), (I-C), (I-D), (I-E), (I-F), and (I-G), and the remainder of X 1 to X 10 are each independently selected from the group consisting of: H, D (deutero), F, Cl, alkyl, cycloalkyl, silyl, fluoroalkyl, arylalkyl, aryl, heteroaryl, alkoxy, and fluoroalkoxy;
wherein in (I-A), A 1 , A 2 , A 3 , A 4 , and A 5 are each independently selected from the group consisting of H, D (deutero), F, Cl, alkyl, cycloalkyl, silyl, fluoroalkyl, arylalkyl, aryl, heteroaryl, alkoxy, and fluoroalkoxy;
wherein in (I-B), at least one of B 1 , B 2 , B 3 , B 4 , B 5 , B 6 , B 7 , and B 8 represents an attachment to Formula (I), and the remainder of B 1 , B 2 , B 3 , B 4 , B 5 , B 6 , B 7 , and B 8 are each independently selected from the group consisting of H, D (deutero), F, Cl, alkyl, cycloalkyl, silyl, fluoroalkyl, arylalkyl, aryl, heteroaryl, alkoxy, and fluoroalkoxy;
wherein in (I-C), at least one of C 1 , C 2 , C 3 , C 4 , C 5 , C 6 , C 7 , C 8 , C 9 , and C 10 represents an attachment to Formula (I); and the remainder of C 1 , C 2 , C 3 , C 4 , C 5 , C 6 , C 7 , C 8 , C 9 , and C 10 are each independently selected from the group consisting of: H, D (deutero), F, Cl, alkyl, cycloalkyl, silyl, fluoroalkyl, arylalkyl, aryl, heteroaryl, alkoxy, and fluoroalkoxy;
wherein in (I-D), at least one of the D 1 , D 2 , D 3 , D 4 , D 5 , D 6 , D 7 , D 8 , D 9 , and D 10 represents an attachment to Formula (I), and the remainder of D 1 , D 2 , D 3 , D 4 , D 5 , D 6 , D 7 , D 8 , D 9 , and D 10 are each independently selected from the group consisting of: H, D (deutero), F, Cl, alkyl, cycloalkyl, silyl, fluoroalkyl, arylalkyl, aryl, heteroaryl, alkoxy, and fluoroalkoxy;
wherein in (I-E), at least one of the E 1 , E 2 , E 3 , E 4 , E 5 , E 6 , E 7 , E 8 , E 9 , E 10 , E 11 , and E 12 represents an attachment to Formula (I), and the remainder of E 1 , E 2 , E 3 , E 4 , E 5 , E 6 , E 7 , E 8 , E 9 , E 10 , E 11 , and E 12 are each independently selected from the group consisting of: H, D (deutero), F, Cl, alkyl, cycloalkyl, silyl, fluoroalkyl, arylalkyl, aryl, heteroaryl, alkoxy, and fluoroalkoxy;
wherein in (I-F), at least one of F 1 , F 2 , F 3 , F 4 , F 5 , F 6 , F 7 , F 8 , F 9 , and F 10 represents an attachment to Formula (I), and the remainder of F 1 , F 2 , F 3 , F 4 , F 5 , F 6 , F 7 , F 8 , F 9 , and F 10 are each independently selected from the group consisting of: H, D (deutero), F, Cl, alkyl, cycloalkyl, silyl, fluoroalkyl, arylalkyl, aryl, heteroaryl, alkoxy, and fluoroalkoxy; and
wherein in (I-G), at least one of G 1 , G 2 , G 3 , G 4 , G 5 , G 6 , G 7 , G 8 , G 9 , G 10 , G 11 , and G 12 represents an attachment to Formula (I), and the remainder of G 1 , G 2 , G 3 , G 4 , G 5 , G 6 , G 7 , G 8 , G 9 , G 10 , G 11 , and G 12 are each independently selected from the group consisting of: H, D (deutero), F, Cl, alkyl, cycloalkyl, silyl, fluoroalkyl, arylalkyl, aryl, heteroaryl, alkoxy, and fluoroalkoxy.
2. The opto-electronic device of claim 1 , wherein at least one of X 1 , X 8 , and X 9 is selected from the group consisting of: (I-A), (I-B), (I-C), (I-D), (I-E), (I-F), and (I-G) and at least one of X 4 , X 5 , and X 10 is selected from the group consisting of: (I-A), (I-B), (I-C), (I-D), (I-E), (I-F), and (I-G).
3. The opto-electronic device of claim 2 , wherein X 2 , X 3 , X 6 , and X 7 are each individually selected from the group consisting of: H, D (deutero), F, Cl, C 1 -C 6 alkyl, cycloalkyl, silyl, fluoroalkyl, arylalkyl, aryl, heteroaryl, alkoxy, and fluoroalkoxy.
4. The opto-electronic device of claim 1 , wherein at least one of X 1 , X 8 , and X 9 is selected from the group consisting of: (I-A), (I-B), and (I-C), and at least one of X 4 , X 5 , and X 10 is selected from the group consisting of: (I-A), (I-B), and (I-C).
5. The opto-electronic device of claim 4 , wherein X 2 , X 3 , X 6 , and X 7 are each individually selected from the group consisting of: H, D (deutero), F, Cl, C 1 -C 6 alkyl, cycloalkyl, silyl, fluoroalkyl, arylalkyl, aryl, heteroaryl, alkoxy, and fluoroalkoxy.
6. The opto-electronic device of claim 1 , wherein at least one of X 1 , X 8 , and X 9 is (I-A), and at least one of X 4 , X 5 , and X 10 is selected from the group consisting (I-B) and (I-C).
7. The opto-electronic device of claim 1 , wherein at least one of X 1 , X 8 , and X 9 is (I-A), and at least one of X 4 , X 5 , and X 10 is (I-B).
8. The opto-electronic device of claim 1 , wherein at least one of X 1 , X 8 , and X 9 is (I-A), and at least one of X 4 , X 5 , and X 10 is (I-C).
9. The opto-electronic device of claim 6 , wherein at least one of A 1 , A 2 , A 3 , A 4 , and A 5 is t-butyl, methoxy, trifluoromethoxy, methyl, trifluoromethyl, or F.
10. The opto-electronic device of claim 6 , wherein up to three of the A 1 , A 2 , A 3 , A 4 , and A 5 are F.
11. The opto-electronic device of claim 6 , wherein B 1 , B 2 , B 3 , B 4 , B 5 , B 6 , B 7 , C 1 , C 2 , C 3 , C 4 , C 5 , C 6 , and C 7 are H.
12. The opto-electronic device of claim 1 , wherein X 9 is (I-A), and X 10 is selected from the group consisting of: (I-D), (I-E), (I-F), and (I-G).
13. The opto-electronic device of claim 1 , wherein the NIC has a thickness of about 5 nm to about 100 nm.
14. The opto-electronic device of claim 1 , wherein the NIC comprises a compound selected from the group consisting of:
15. The opto-electronic device of claim 1 , wherein the first portion comprises at least one emissive region.
16. The opto-electronic device of claim 1 , wherein the second portion comprises at least a part of a non-emissive region.
17. The opto-electronic device of claim 1 , further comprising a first electrode, a second electrode and a semiconducting layer between the first electrode and the second electrode, wherein the second electrode extends between the NIC and the semiconducting layer in the first portion.
18. The opto-electronic device of claim 17 , wherein the conductive coating is electrically coupled to the second electrode.
19. The opto-electronic device of claim 15 , wherein at least a first part of the first portion overlaps at least a second part of the second portion.
20. The opto-electronic device of claim 19 , wherein the NIC is disposed on the surface of the device in the second part and the conductive coating is disposed over the NIC therein.
21. The opto-electronic device of claim 20 , wherein the conductive coating is spaced apart from the NIC in a cross-sectional aspect.
22. The opto-electronic device of claim 19 , wherein the conductive coating is electrically coupled to an auxiliary electrode.
23. The opto-electronic device of claim 19 , wherein the second portion comprises at least one additional emissive region.
24. The opto-electronic device of claim 23 , wherein at least one of the additional emissive regions of the second portion of the device comprises a first electrode, a second electrode and a semiconducting layer between the first electrode and the second electrode, wherein the second electrode comprises the conductive coating.
25. The opto-electronic device of claim 23 , wherein a wavelength of light emitted from the at least one additional emissive region of the second portion of the device differs from a wavelength of light emitted from the at least one emissive region of the first portion of the device.
26. The opto-electronic device of claim 15 , wherein the conductive coating comprises an auxiliary electrode.
27. The opto-electronic device of claim 1 , wherein the second portion comprises at least one emissive region.
28. The opto-electronic device of claim 27 , wherein the first portion comprises at least a part of a non-emissive region.
29. The opto-electronic device of claim 27 , wherein the first portion is substantially light-transmissive therethrough.
30. The opto-electronic device of claim 27 , further comprising a first electrode, a second electrode and a semiconducting layer between the first electrode and the second electrode, wherein the second electrode extends between the NIC and the semiconducting layer in the first portion.
31. The opto-electronic device of claim 30 , wherein the second electrode extends between the conductive coating and the semiconducting layer in the second portion.
32. The opto-electronic device of claim 27 , further comprising a first electrode, a semiconducting layer between the first electrode and the conductive coating, wherein the conductive coating comprises a second electrode of the device.