Solid-state image device and imaging apparatus

1. A solid-state imaging device comprising:

a photoelectric conversion film provided over a plurality of pixels;

a first electrode electrically coupled to the photoelectric conversion film and provided to each pixel, wherein the first electrode is provided in a passivation film;

a second electrode opposed to the first electrode, the photoelectric conversion film being interposed between the second electrode and the first electrode;

a first electric charge accumulation section that accumulates signal electric charges which are generated in the photoelectric conversion film and are moved via the first electrode;

a reset transistor that is provided to each pixel and applies a reset electric potential to the first electric charge accumulation section; and

an electric potential generator that applies, during a period in which the signal electric charges are accumulated in the first electric charge accumulation section, an electric potential VPD to the first electrode of each of at least one or more pixels out of the plurality of pixels, wherein the signal electric charges generated in the photoelectric conversion film of the at least one or more pixels out of the plurality of pixels in which the electric potential VPD is applied to the first electrode moves to the first electric charge accumulation section of a pixel other than the at least one or more pixels out of the plurality of pixels in which the electric potential VPD is applied to the first electrode.

2. The solid-state imaging device according to claim 1 , wherein the electric potential generator is coupled to the first electrode via the reset transistor.

3. The solid-state imaging device according to claim 1 , wherein the electric potential generator includes a first transistor.

4. The solid-state imaging device according to claim 3 , wherein the first transistor is coupled to the electric potential VPD, and is coupled in parallel to the reset transistor between the first electrode and the reset transistor.

5. The solid-state imaging device according to claim 4 , wherein the first transistor is configured to turn into an on state during the period.

6. The solid-state imaging device according to claim 3 , wherein the first transistor is coupled in series to the first electric charge accumulation section between the first electrode and the first electric charge accumulation section.

7. The solid-state imaging device according to claim 6 , wherein the first transistor is configured to turn into an off state during the period.

8. The solid-state imaging device according to claim 3 , wherein the electric potential generator includes a second electric charge accumulation section provided for each pixel between the first electrode and the first electric charge accumulation section, and wherein a second transistor is provided between the second electric charge accumulation section and the first electric charge accumulation section.

9. The solid-state imaging device according to claim 8 , wherein the second transistor is configured to turn into an off state during the period.

10. The solid-state imaging device according to claim 1 , further comprising:

a control line that selects the at least one or more pixels out of the plurality of pixels in which the electric potential VPD is applied to the first electrode.

11. The solid-state imaging device according to claim 10 , wherein the plurality of pixels are arranged along a first direction and along a second direction that intersects the first direction, and wherein the control line is provided along at least one of the first direction or the second direction.

12. The solid-state imaging device according to claim 8 , further comprising:

a third transistor for switching a capacitance that is coupled to the first electric charge accumulation section of a pixel other than the at least one or more pixels out of the plurality of pixels in which the electric potential VPD is applied to the first electrode; and

an additional capacitance element that is coupled to the third transistor.

13. The solid-state imaging device according to claim 1 , wherein the photoelectric conversion film includes a compound semiconductor, an organic semiconductor, or a quantum dot.

14. An imaging apparatus comprising a solid-state imaging device, the solid-state imaging device including:

a photoelectric conversion film provided over a plurality of pixels;

a first electrode electrically coupled to the photoelectric conversion film and provided to each pixel, wherein the first electrode is provided in a passivation film;

a second electrode opposed to the first electrode, the photoelectric conversion film being interposed between the second electrode and the first electrode;

a first electric charge accumulation section that accumulates signal electric charges which are generated in the photoelectric conversion film and are moved via the first electrode;

a reset transistor that is provided to each pixel and applies a reset electric potential to the first electric charge accumulation section; and

an electric potential generator that applies, during a period in which the signal electric charges are accumulated in the first electric charge accumulation section, an electric potential VPD to the first electrode of each of at least one or more pixels out of the plurality of pixels, wherein the signal electric charges generated in the photoelectric conversion film of the at least one or more pixels out of the plurality of pixels in which the electric potential VPD is applied to the first electrode moves to the first electric charge accumulation section of a pixel other than the at least one or more pixels out of the plurality of pixels in which the electric potential VPD is applied to the first electrode.