Power converter embodied in a semiconductor substrate member

1. A power converter comprising a semiconductor substrate member comprising: a first region with a passive electrical component with a first electrically conductive layer pattern of an electrically conductive material and a second electrically conductive layer pattern of the electrically conductive material deposited on respective sides of the semiconductor substrate member; wherein a trench or through-hole is formed in the substrate within the first region, and wherein the electrically conductive material is deposited at least on a bottom portion of the trench or on a sidewall of the through-hole and electrically connected to one or both of the first conductive layer pattern and the second conductive layer pattern; a second region with an active semiconductor component embedded in the semiconductor substrate member by a semiconductor fabrication process; and an inductor formed in the first region with an inductor winding of the inductor comprising: a first winding portion formed in the first electrically conductive layer pattern, a second winding portion formed by a first through-substrate-via, a third winding portion formed in the second electrically conductive layer pattern, and a fourth winding portion formed by a second through-substrate-via; wherein the first, second, third and fourth portions are electrically connected by the deposited electrically conductive material, wherein the inductor winding circumscribes an inductor core which has an array of deep trenches laminated with a first layer of a magnetic material and a second layer of a non-magnetic material, wherein the power converter is embedded in a single semiconductor substrate piece by a semiconductor manufacturing process.

2. The power converter according to claim 1 , wherein one or both of the first electrically conductive layer pattern and the second electrically conductive layer pattern extends across at least some of second region to electrically connect the active semiconductor component with the passive electrical component.

3. The power converter according to claim 1 , wherein the one or both of the first electrically conductive layer pattern and the second electrically conductive layer pattern comprises a pad portion which is exposed for electrical connection by soldering, wire bonding or flip-chip bonding.

4. The power converter according to claim 3 , wherein one or both of the first electrically conductive layer pattern and the second electrically conductive layer pattern comprises a portion, extending from or to the pad portion, which is covered by an isolation layer.

5. The power converter according to claim 1 , wherein the inductor is a solenoid inductor or a toroidal inductor.

6. The power converter according to claim 1 , wherein the inductor winding circumscribes the inductor core, comprising a material selected from the group of: air, silicon, magnetic materials, epoxy or a combination thereof.

7. The power converter according to claim 1 , wherein the inductor winding circumscribes the inductor core, comprising magnetic particles suspended in epoxy.

8. The power converter according to claim 1 , wherein the inductor comprises a first coil and a second coil circumscribing a common inductor core, wherein windings of the first coil and windings of the second coil are formed by the first electrically conductive layer pattern and the second electrically conductive layer pattern and through-substrate vias.

9. The power converter according to claim 1 , wherein the power converter comprises a DC-DC converter.

10. The power converter according to claim 1 , wherein the power converter comprises a power amplifier.

11. A power converter comprising a semiconductor substrate member comprising: a first region with a passive electrical component with a first electrically conductive layer pattern of an electrically conductive material and a second electrically conductive layer pattern of the electrically conductive material deposited on respective sides of the semiconductor substrate member; wherein a trench or through-hole is formed in the substrate within the first region, and wherein the electrically conductive material is deposited at least on a bottom portion of the trench or on a sidewall of the through-hole and electrically connected to one or both of the first conductive layer pattern and the second conductive layer pattern; a second region with an active semiconductor component embedded in the semiconductor substrate member by a semiconductor fabrication process; and a capacitor formed by: a first capacitor member which comprises a conductive material deposited in first deep trenches extending from a first side of the semiconductor substrate; and a second capacitor member which comprises the conductive material deposited in second deep trenches extending from a second side of the semiconductor substrate, wherein the power converter is embedded in a single semiconductor substrate piece by a semiconductor manufacturing process.

12. A stack of components, comprising: one or more semiconductor substrate members, each comprising; a first region with a passive electrical component with a first electrically conductive layer pattern of an electrically conductive material and a second electrically conductive layer pattern of the electrically conductive material deposited on respective sides of the semiconductor substrate member; wherein a trench or through-hole is formed in the substrate within the first region, and wherein the electrically conductive material is deposited at least on a bottom portion of the trench or on a sidewall of the through-hole and electrically connected to one or both of the first conductive layer pattern and the second conductive layer pattern; a second region with an active semiconductor component embedded in the semiconductor substrate member by a semiconductor fabrication process; and an inductor formed in the first region with an inductor winding of the inductor comprising: a first winding portion formed in the first electrically conductive layer pattern, a second winding portion formed by a first through-substrate-via, a third winding portion formed in the second electrically conductive layer pattern, and a fourth winding portion formed by a second through-substrate-via; wherein the first, second, third and fourth portions are electrically connected by the deposited electrically conductive material; wherein the inductor winding circumscribes an inductor core which has an array of deep trenches laminated with a first layer of a magnetic material and a second layer of a non-magnetic material; wherein at least one of the semiconductor substrate member comprises pad portions on a top side and pad portions on a bottom side; and wherein each semiconductor substrate member is embedded in a single semiconductor substrate piece by a semiconductor manufacturing process.

13. A stack of components, comprising: one or more semiconductor substrate members, each comprising; a first region with a passive electrical component with a first electrically conductive layer pattern of an electrically conductive material and a second electrically conductive layer pattern of the electrically conductive material deposited on respective sides of the semiconductor substrate member; wherein a trench or through-hole is formed in the substrate within the first region, and wherein the electrically conductive material is deposited at least on a bottom portion of the trench or on a sidewall of the through-hole and electrically connected to one or both of the first conductive layer pattern and the second conductive layer pattern; and a second region with an active semiconductor component embedded in the semiconductor substrate member by a semiconductor fabrication process; and a capacitor formed by: a first capacitor member which comprises a conductive material deposited in first deep trenches extending from a first side of the semiconductor substrate; and a second capacitor member which comprises the conductive material deposited in second deep trenches extending from a second side of the semiconductor substrate; wherein at least one of the semiconductor substrate member comprises pad portions on a top side and pad portions on a bottom side; and wherein each semiconductor substrate member is embedded in a single semiconductor substrate piece by a semiconductor manufacturing process.