Device for injecting spin-polarized charge carriers and for reflecting light
The invention relates to a device ( 2 ) for injecting spin-polarized electrons and for reflecting light, comprising at least one lattice structure ( 3 ) having a plurality of recesses ( 4 ), wherein the lattice structure ( 3 ) is designed to reflect the light, and wherein a respective injection contact ( 5, 6 ) for injecting spin-polarized electrons is arranged in at least some of the recesses ( 4 ).
1. A Device for injecting spin-polarized electrons and for reflecting light, comprising at least one lattice structure having a plurality of recesses, wherein the lattice structure is designed to reflect the light, and wherein a respective injection contact for injecting spin-polarized charge carriers is arranged in at least some of the recesses;
an arrangement of an active region; and
a mirror with the device,
wherein the mirror and the device are arranged for reflecting light into the active region.
2. The Device according to claim 1 , wherein first injection contacts and second injection contacts are arranged in an alternating arrangement, and wherein the first injection contacts are designed for the injection of electrons having a first spin polarization and the second injection contacts are designed for the injection of electrons having a second spin polarization different from the first spin polarization.
3. The Device according to claim 1 , wherein metal contacts are further provided in some of the recesses for injecting electrons without spin polarization.
4. The Device according to claim 1 , wherein a length of the recesses in the lattice structure is smaller than a wavelength of the light to be reflected.
5. The Device according to claim 1 , wherein at least some of the injection contacts comprise a respective ferromagnetic layer.
6. The Device according to claim 5 , wherein the ferromagnetic layer has a magnetization which is oriented perpendicular to the ferromagnetic layer.
7. The Device according to claim 1 , wherein at least some of the injection contacts comprise a respective tunnel barrier.
8. The Device of claim 1 , wherein at least some of the injection contacts of the device are designed as a respective Schottky contact.
9. A Method for operating the device of claim 8 , wherein spin-polarized electrons are injected via the injection contacts into the active region of the arrangement, and wherein a polarization of the light generated by the arrangement is influenced by the spin polarization of the electrons.
10. The Device according to claim 2 wherein metal contacts are further provided in some of the recesses for injecting electrons without spin polarization.
11. The Device according to claim 2 , wherein a length of the recesses in the lattice structure is smaller than a wavelength of the light to be reflected.
12. The Device according to claim 3 , wherein a length of the recesses in the lattice structure is smaller than a wavelength of the light to be reflected.
13. The Device according to claim 2 , wherein at least some of the injection contacts comprise a respective ferromagnetic layer.
14. The Device according to claim 3 , wherein at least some of the injection contacts comprise a respective ferromagnetic layer.
15. The Device according to claim 4 , wherein at least some of the injection contacts comprise a respective ferromagnetic layer.
16. The Device according to claim 2 , wherein at least some of the injection contacts comprise a respective tunnel barrier.
17. The Device according to claim 3 , wherein at least some of the injection contacts comprise a respective tunnel barrier.
18. The Device according to claim 4 wherein at least some of the injection contacts comprise a respective tunnel barrier.
19. The Device of claim 2 , further comprising an active region, a mirror, wherein the mirror and the device are arranged for reflecting light into the active region.