Single plate configuration and memory array operation
Methods, systems, and devices for a single plate configuration and memory array operation are described. A non-volatile memory array may utilize a single plate to cover a subset of the array. One or more memory cells of the subset may be selected by operating the plate and an access line of an unselected memory cell at a fixed voltage. A second voltage may be applied to an access line of the selected cell, and subsequently reduced to perform an access operation. Removing the applied voltage may allow for the memory cell to undergo a recovery period prior to a subsequent access operation.
1. An apparatus, comprising:
a memory cell coupled with a digit line and a plate and comprises a first selection component;
a sense component coupled with the digit line;
a second memory cell coupled with a second digit line and the plate, the second memory cell comprising a second selection component, wherein the sense component is coupled with the second digit line;
a switching component coupled with the second digit line and the plate and configured to couple the second digit line with the plate; and
a precharge voltage selector coupled with the sense component and the digit line, wherein the precharge voltage selector is configured to apply, after a precharge operation for the memory cell, a negative voltage to the digit line based at least in part on a logic state stored by the sense component, wherein the precharge voltage selector further comprises:
a first transistor coupled with the sense component;
a second transistor coupled with the first transistor and a first voltage source;
a third transistor coupled with the first transistor and a second voltage source, wherein the precharge voltage selector is configured to output a first voltage associated with the first voltage source or the second voltage source based at least in part on a second voltage of a gate of the first transistor; and
a fourth transistor coupled with a common node of the first transistor and the second transistor and configured to couple the digit line with a third voltage source having a negative polarity.
2. The apparatus of claim 1 , further comprising:
a third memory cell coupled with the digit line and the plate, wherein the precharge voltage selector is configured to discharge the third memory cell based at least in part on applying the negative voltage to the digit line.
3. The apparatus of claim 1 , further comprising:
a column decoder that is coupled with the sense component and a plurality of digit lines that include the digit line, wherein the column decoder comprises:
a first switching component coupled with the digit line and the sense component, the first switching component configured to couple the digit line with the sense component, and
a second switching component coupled with the second digit line and the sense component, the second switching component configured to couple the second digit line with the sense component.