Electronic device and method for manufacturing electronic device
A method for manufacturing an electronic device including a semiconductor memory may include forming a first carbon electrode material, surface-treating the first carbon electrode material to decrease a surface roughness of the first carbon electrode material, and forming a second carbon electrode material on the treated surface of the first carbon electrode material. The second carbon electrode material may have a thickness that is greater than a thickness of the first carbon electrode material.
1. A method for manufacturing an electronic device including a semiconductor memory, the method comprising:
forming a first carbon electrode material;
surface-treating the first carbon electrode material to decrease a surface roughness of the first carbon electrode material; and
forming a second carbon electrode material on a surface of the surface-treated first carbon electrode material, wherein the second carbon electrode material has a thickness that is less than a thickness of the first carbon electrode material.
2. The method of claim 1 , wherein surface-treating the first carbon electrode material includes performing an etching process, an ion injection process, or a doping process.
3. The method of claim 1 , wherein the thickness of the second carbon electrode material is 100 Å or less.
4. The method of claim 1 , wherein the second carbon electrode material has a surface roughness of 30 Å or less.
5. The method of claim 1 , wherein the first carbon electrode material and the second carbon electrode material have substantially the same resistivity.
6. The method of claim 1 , wherein the first carbon electrode material and the second carbon electrode material have different resistivities.
7. The method of claim 1 , wherein the first carbon electrode material is formed at a first temperature, and the second carbon electrode material is formed at a second temperature different from the first temperature.
8. The method of claim 1 , wherein the surface-treated first carbon electrode material and the second carbon electrode material have different impurity concentrations.
9. The method of claim 1 , wherein forming the first carbon electrode material, surface-treating the first carbon electrode material, and forming of second carbon electrode material are performed in-situ.
10. A method for manufacturing an electronic device including a semiconductor memory, the method comprising:
forming a first carbon electrode material under first process conditions; and
forming a second carbon electrode material on a surface of the first carbon electrode material under second process conditions different from the first process conditions, wherein a thickness of the second carbon electrode material is less than a thickness of the first carbon electrode material.
11. The method of claim 10 , wherein the first carbon electrode material is formed at a first temperature, and the second carbon electrode material is formed at a second temperature different from the first temperature.
12. The method of claim 10 , wherein the first carbon electrode material includes an impurity of a first concentration, and the second carbon electrode material includes an impurity of a second concentration different from the first concentration.
13. The method of claim 10 , wherein the second carbon electrode material has a thickness of 100 Å or less.
14. The method of claim 10 , wherein the second carbon electrode material has a surface roughness of 30 Å or less.
15. The method of claim 10 , wherein the first carbon electrode material and the second carbon electrode material have different resistivities.
16. The method of claim 10 , further comprising surface-treating the first carbon electrode material before the second carbon electrode material is formed.