Solid-state imaging element and electronic device
An imaging device and an electronic apparatus including an imaging device are provided. The imaging device includes a substrate and plurality of pixel regions, wherein each pixel region includes: a first photoelectric conversion portion that performs photoelectric conversion according to a first wavelength of incident light; a first reading portion that reads charges converted by the first photoelectric conversion portion; a first storage unit that is formed between adjacent pixels and stores the charges read by the first reading portion; a second photoelectric conversion portion that performs photoelectric conversion according to a second wavelength different from the first wavelength; a second reading portion that reads charges converted by the second photoelectric conversion portion; and a second storage unit that is formed between adjacent pixels and stores the charges read by the second reading portion.
1. A solid-state imaging device, comprising:
a substrate; and
a plurality of pixel regions, wherein each pixel region includes:
a first photoelectric conversion portion in a first pixel and a first photoelectric conversion portion in a second pixel that perform photoelectric conversion according to a first wavelength of incident light;
a first reading portion in each pixel that reads charges converted by of the first photoelectric conversion portion in each respective pixel, wherein the first reading portion is a vertical transistor;
a first storage unit that stores the charges read by the first reading portion;
a second photoelectric conversion portion in the second pixel and a second photoelectric conversion portion in a third pixel that perform photoelectric conversion according to a second wavelength of incident light different from the first wavelength of the incident light;
a second reading portion in each pixel that reads charges converted by the second photoelectric conversion portion in each respective pixel; and
a second storage unit that is formed between adjacent pixels and stores the charges read by the second reading portion.
2. The solid-state imaging device of claim 1 , wherein the first storage unit is formed between first photoelectric conversion portions in adjacent pixels.
3. The solid-state imaging device of claim 1 , wherein the first storage unit is formed between two adjacent pixels, and stores the charges read by the first reading portion formed in each of the two adjacent pixels.
4. The solid-state imaging device of claim 1 , wherein the first storage unit is formed between 2×2 adjacent pixels, and stores the charges read by the first reading portion formed in each of the 2×2 adjacent pixels.
5. The solid-state imaging device of claim 1 , wherein the second reading portion is a planar transistor.
6. The solid-state imaging device of claim 1 , wherein the second reading portion is formed adjacent to the second storage unit formed between the adjacent pixels.
7. The solid-state imaging device of claim 1 , wherein the second storage unit is formed between two adjacent pixels, and stores the charges read by the second reading portion formed in each of the two adjacent pixels.
8. The solid-state imaging device of claim 1 , wherein the second storage unit is formed between 2×2 adjacent pixels, and stores the charges read by the second reading portion formed in each of the 2×2 adjacent pixels.
9. The solid-state imaging device of claim 1 , wherein each pixel region further includes:
a third photoelectric conversion portion that performs photoelectric conversion according to a third wavelength of incident light different from the first and second wavelengths of the incident light;
a third reading portion that reads charges converted by the third photoelectric conversion portion; and
a third storage unit that is formed between adjacent pixels and stores the charges read by the third reading portion.
10. The solid-state imaging device of claim 9 , wherein the third reading portion is a through-electrode.
11. The solid-state imaging device of claim 9 , wherein the third reading portion is formed adjacent to the third storage unit formed between the adjacent pixels.
12. The solid-state imaging device of claim 9 , wherein the third storage unit is formed between two adjacent pixels, and stores the charges read by the third reading portion formed in each of the two adjacent pixels.
13. The solid-state imaging device of claim 9 , wherein the third storage unit is formed between 2×2 adjacent pixels, and stores the charges read by the third reading portion formed in each of the 2×2 adjacent pixels.
14. An electronic apparatus, the electronic apparatus comprising:
a solid-state imaging device, comprising:
a substrate;
a plurality of pixel regions wherein each pixel region includes;
a first photoelectric conversion portion in a first pixel and a first photoelectric conversion portion in a second pixel that performs photoelectric conversion according to a first wavelength of incident light;
a first reading portion in each pixel that reads charges converted by the first photoelectric conversion portion in each respective pixel, wherein the first reading portion is a vertical transistor; and
a first storage unit that stores the charges read by the first reading portion;
a second photoelectric conversion portion in the second pixel and a second photoelectric conversion portion in a third pixel that perform photoelectric conversion according to a second wavelength of incident light different from the first wavelength of the incident light;
a second reading portion in each pixel that reads charges converted by the second photoelectric conversion portion in each respective pixel; and
a second storage unit that is formed between adjacent pixels and stores the charges read by the second reading portion.
15. The electronic apparatus of claim 14 , wherein the second reading portion is a planar transistor.
16. The electronic apparatus of claim 14 , wherein each pixel region further includes:
a third photoelectric conversion portion that performs photoelectric conversion according to a third wavelength of incident light different from the first and second wavelengths of the incident light;
a third reading portion that reads charges converted by the third photoelectric conversion portion; and
a third storage unit that is formed between adjacent pixels and stores the charges read by the third reading portion.
17. The electronic apparatus of claim 16 , wherein the third reading portion is a through-electrode.