Solid-state imaging element and electronic device
An imaging device and an electronic apparatus including an imaging device are provided. The imaging device includes a substrate and plurality of pixel regions, wherein each pixel region includes: a first photoelectric conversion portion that performs photoelectric conversion according to a first wavelength of incident light; a first reading portion that reads charges converted by the first photoelectric conversion portion; a first storage unit that is formed between adjacent pixels and stores the charges read by the first reading portion; a second photoelectric conversion portion that performs photoelectric conversion according to a second wavelength different from the first wavelength; a second reading portion that reads charges converted by the second photoelectric conversion portion; and a second storage unit that is formed between adjacent pixels and stores the charges read by the second reading portion.
1. A solid-state imaging device, comprising:
a substrate; and
a plurality of pixel regions, wherein each pixel region of the plurality of pixel regions includes:
a first photoelectric conversion portion that performs photoelectric conversion according to a first wavelength of incident light;
a first reading portion that reads charges converted by the first photoelectric conversion portion;
a first storage unit that is formed between adjacent pixels and stores the charges read by the first reading portion;
a second photoelectric conversion portion that performs photoelectric conversion according to a second wavelength different from the first wavelength of the incident light;
a second reading portion that reads charges converted by the second photoelectric conversion portion;
a second storage unit that is formed between adjacent pixels and stores the charges read by the second reading portion; and
a wiring connecting the first storage unit and the second storage unit.
2. The solid-state imaging device of claim 1 , wherein the first reading portion is a vertical transistor.
3. The solid-state imaging device of claim 1 , wherein the first reading portion is formed adjacent to the first storage unit formed between the adjacent pixels.
4. The solid-state imaging device of claim 1 , wherein the first storage unit is formed between two adjacent pixels, and stores the charges read by the first reading portion formed in each of the two adjacent pixels.
5. The solid-state imaging device of claim 1 , wherein the first storage unit is formed between 2×2 adjacent pixels, and stores the charges read by the first reading portion formed in each of the 2×2 adjacent pixels.
6. The solid-state imaging device of claim 1 , wherein the second reading portion is a planar transistor.
7. The solid-state imaging device of claim 1 , wherein the second reading portion is formed adjacent to the second storage unit formed between adjacent pixels.
8. The solid-state imaging device of claim 1 , wherein the second storage unit is formed between two adjacent pixels, and stores the charges read by the second reading portion formed in each of the two adjacent pixels.
9. The solid-state imaging device of claim 1 , wherein the second storage unit is formed between 2×2 adjacent pixels, and stores the charges read by the second reading portion formed in each of the 2×2 adjacent pixels.
10. The solid-state imaging device of claim 1 , wherein each pixel region of the plurality of pixel regions further includes:
a third photoelectric conversion portion that performs photoelectric conversion according to a third wavelength different from the first and second wavelengths of the incident light;
a third reading portion that reads charges converted by the third photoelectric conversion portion; and
a third storage unit that is formed between adjacent pixels and stores the charges read by the third reading portion.
11. The solid-state imaging device of claim 10 , wherein the third reading portion is a through-electrode.
12. An electronic apparatus, the electronic apparatus comprising:
a solid-state imaging device, comprising:
a substrate; and
a plurality of pixel regions, wherein each pixel region of the plurality of pixel regions includes:
a first photoelectric conversion portion that performs photoelectric conversion according to a first wavelength of incident light;
a first reading portion that reads charges converted by the first photoelectric conversion portion;
a first storage unit that stores the charges read by the first reading portion formed in each of a plurality of adjacent pixels;
a second photoelectric conversion portion that performs photoelectric conversion according to a second wavelength different from the first wavelength of the incident light;
a second reading portion that reads charges converted by the second photoelectric conversion portion;
a second storage unit that stores the charges read by the second reading portion formed in each of the plurality of adjacent pixels; and
a wiring connecting the first storage unit and the second storage unit.
13. The electronic apparatus of claim 12 , wherein the first reading portion is a vertical transistor.
14. The electronic apparatus of claim 12 , wherein the first reading portion is formed adjacent to the first storage unit formed between adjacent pixels.
15. The electronic apparatus of claim 12 , wherein the first storage unit is formed between two adjacent pixels, and stores the charges read by the first reading portion formed in each of the two adjacent pixels.
16. The electronic apparatus of claim 12 , wherein the first storage unit is formed between 2×2 adjacent pixels, and stores the charges read by the first reading portion formed in each of the 2×2 adjacent pixels.
17. The electronic apparatus of claim 12 , wherein the second reading portion is a planar transistor.
18. The electronic apparatus of claim 12 , wherein each pixel region of the plurality of pixel regions further includes:
a third photoelectric conversion portion that performs photoelectric conversion according to a third wavelength different from the first and second wavelengths of the incident light;
a third reading portion that reads charges converted by the third photoelectric conversion portion; and
a third storage unit that is formed between adjacent pixels and stores the charges read by the third reading portion.
19. The electronic apparatus of claim 18 , wherein the third reading portion is a through-electrode.