Semiconductor device and method of forming a 3D interposer system-in-package module
A semiconductor device has a first substrate and a second substrate. An opening is formed through the second substrate. A first semiconductor component and second semiconductor component are disposed between the first substrate and second substrate. The second substrate is electrically coupled to the first substrate through the first semiconductor component. A first terminal of the first semiconductor component is electrically coupled to the first substrate. A second terminal of the first semiconductor component is electrically coupled to the second substrate. The second semiconductor component extends into the opening. An encapsulant is deposited over the first substrate and second substrate.
1. A method of making a semiconductor device, comprising:
providing a first substrate;
disposing a first electrical component over the first substrate with a first terminal of the first electrical component oriented toward the first substrate and a second terminal of the first electrical component oriented away from the first substrate, wherein the first electrical component is a discrete active or passive device;
disposing a first solder material between the first terminal of the first electrical component and the first substrate;
disposing a second substrate over the first substrate with the first electrical component between the first substrate and second substrate;
disposing a second solder material between the second terminal of the first electrical component and the second substrate; and
depositing an encapsulant between the first substrate and second substrate and around the first electrical component.
2. The method of claim 1 , further including forming a shielding layer over the encapsulant, wherein the shielding layer is electrically connected to the first substrate or second substrate.
3. The method of claim 1 , further including:
forming an opening through the first substrate or second substrate; and
disposing a second electrical component between the first substrate and second substrate with the second electrical component extending into the opening.
4. The method of claim 1 , wherein the second substrate is electrically coupled to the first substrate through the first electrical component.
5. The method of claim 1 , further including disposing a second electrical component over the second substrate opposite the first electrical component.
6. A method of making a semiconductor device, comprising:
providing a first substrate;
disposing a first electrical component over the first substrate with a first terminal of the first electrical component oriented toward the first substrate and a second terminal of the first electrical component oriented away from the first substrate;
disposing a second substrate over the first substrate with the first electrical component between the first substrate and second substrate;
forming an opening through the first substrate or second substrate; and
singulating the first substrate to create a semiconductor package with the first electrical component and second substrate.
7. The method of claim 6 , further including:
electrically coupling the first terminal of the first electrical component to the first substrate; and
electrically coupling the second terminal of the first electrical component to the second substrate.
8. The method of claim 6 , further including depositing an encapsulant over the first substrate and second substrate.
9. The method of claim 8 , further including forming a shielding layer over the encapsulant.
10. The method of claim 6 , further including disposing a second electrical component between the first substrate and second substrate with the second electrical component extending into the opening.
11. The method of claim 6 , further including disposing a second electrical component over the second substrate opposite the first electrical component.
12. A semiconductor device, comprising:
a first substrate;
a second substrate;
a first electrical component disposed between the first substrate and second substrate with a first terminal of the first electrical component oriented toward the first substrate and a second terminal of the first electrical component oriented toward the second substrate, wherein the first electrical component is a discrete active or passive device;
a first solder material disposed between the first terminal of the first electrical component and the first substrate;
a second solder material disposed between the second terminal of the first electrical component and the second substrate; and
an encapsulant deposited over the first substrate, second substrate, and first electrical component.
13. The semiconductor device of claim 12 , further including a shielding layer formed over the encapsulant, wherein the shielding layer is electrically connected to the first substrate or second substrate.
14. The semiconductor device of claim 12 , further including:
an opening formed through the first substrate or second substrate; and
a second electrical component disposed between the first substrate and second substrate with the second electrical component extending into the opening.
15. The semiconductor device of claim 12 , wherein the second substrate is electrically coupled to the first substrate through the first electrical component.
16. The semiconductor device of claim 12 , further including a second electrical component disposed over the second substrate opposite the first electrical component.
17. A semiconductor device, comprising:
a first substrate;
a second substrate;
an opening formed through the first substrate or second substrate;
a first electrical component disposed between the first substrate and second substrate with a first terminal of the first electrical component oriented toward the first substrate and a second terminal of the first electrical component oriented toward the second substrate; and
an encapsulant deposited over the first substrate, second substrate, and first electrical component, wherein a surface of the encapsulant is coplanar to a surface of the first substrate.
18. The semiconductor device of claim 17 , wherein the first substrate is electrically coupled to the second substrate through the first electrical component.
19. The semiconductor device of claim 17 , wherein the surface of the encapsulant is coplanar to a surface of the second substrate.
20. The semiconductor device of claim 19 , further including a shielding layer formed over the encapsulant.
21. The semiconductor device of claim 17 , further including a second electrical component disposed between the first substrate and second substrate with the second electrical component extending into the opening.