Memory device

1. A memory device, comprising:

a periphery wafer having a functional surface;

a memory array chip stack disposed on the periphery wafer and having a functional surface, wherein the functional surface of the periphery wafer faces toward the functional surface of the memory array chip stack, and a first side of the memory array chip stack is in a staircase configuration;

a plurality of first conductive contacts on the first side of the memory array chip stack, and between and interconnecting the functional surface of the periphery wafer and the functional surface of the memory array chip stack; and

a plurality of third conductive contacts on the functional surface of the periphery wafer and surrounding the memory array chip stack, wherein a top surface of each of the third conductive contacts that is facing away from the functional surface of the periphery wafer is higher than a top surface of the memory array chip stack that is facing away from the functional surface of the memory array chip stack.

2. The memory device of claim 1 , wherein a second side of the memory array chip stack is in a staircase configuration, and the second side is adjacent the first side of the memory array chip stack.

3. The memory device of claim 2 , further comprising a plurality of second conductive contacts on the second side of the memory array chip stack, and between and interconnecting the functional surface of the periphery wafer and the functional surface of the memory array chip stack.

4. The memory device of claim 3 , wherein a total number of the first conductive contacts and the second conductive contacts is in a range from about 100,000 to about 100,000,000.

5. The memory device of claim 2 , wherein a third side opposite to the first side of the memory array chip stack is in an inverted staircase configuration.

6. The memory device of claim 1 , wherein the memory array chip stack comprises a plurality of memory array chips vertically stacked in a face-to-bottom manner.

7. The memory device of claim 6 , wherein the memory array chip stack comprises at least four of the memory array chips.

8. The memory device of claim 6 , wherein a thickness of each of the memory array chips is in a range from about 1 μm to about 50 μm.

9. The memory device of claim 6 , wherein the memory array chips are of a same size.

10. The memory device of claim 6 , further comprising a plurality of dielectric layers laterally interposed between the memory array chips.

11. The memory device of claim 6 , wherein each of the memory array chips is exposed by the adjacent one of the memory array chips at the first side of the memory array chip stack by the same interval.

12. The memory device of claim 1 , wherein a length and a width of the periphery wafer are respectively larger than a length and a width of the memory array chip stack.

13. The memory device of claim 1 , wherein a length and a width of each of the first conductive contacts are in a range from about 0.1 μm to about 2 μm.

14. The memory device of claim 1 , further comprising a first dielectric layer laterally extending over the periphery wafer and surrounding the memory array chip stack and the first conductive contacts.

15. The memory device of claim 14 , further comprising a second dielectric layer laterally extending over the first dielectric layer and covering the memory array chip stack.

16. The memory device of claim 15 , wherein an interface is between the first dielectric layer and the second dielectric layer.

17. The memory device of claim 14 , wherein the first dielectric layer further covers the memory array chip stack.

18. The memory device of claim 1 , wherein a fourth side opposite to the second side of the memory array chip stack is in an inverted staircase configuration.