IP Library › Granted Patent US 11,649,300
Granted Patent B2
US 11,649,300 · App. 16/999,157 · Granted May 16, 2023

Extraction method of chitin nanocrystals using electron beam irradiation and chitin nanocrystal powder

Inventors: Jihoon Shin (Daejeon, KR); Hyunho Lee (Daejeon, KR); Yeong Un Kim (Daejeon, KR)
Assignee: KOREA RESEARCH INSTITUTE OF CHEMICAL TECHNOLOGY
C08B37/003B01J19/085
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Quick Facts
Patent No.
US 11,649,300
App. No.
16/999,157
Granted
May 16, 2023
Kind
B2
Abstract

The present disclosure relates to a method for extracting chitin nanocrystals through electron beam irradiation comprising the steps of: (i) irradiating a chitin-based solid material with an electron beam; (ii) washing the chitin-based solid material subjected to electron beam irradiation; (iii) adding a basic solution to the washed chitin-based solid material; (iv) high-pressure homogenizing the chitin-based solid material dispersed in an aqueous system to which the basic solution is added, to prepare a suspension containing chitin nanocrystals.

Claims (44)

1. A method for extracting chitin nanocrystals through electron beam irradiation comprising the steps of:

(i) irradiating a chitin-based solid material with an electron beam;

(ii) washing the chitin-based solid material subjected to electron beam irradiation;

(iii) adding a basic solution to the washed chitin-based solid material;

(iv) high-pressure homogenizing the chitin-based solid material dispersed in an aqueous system to which the basic solution is added, to prepare a suspension containing chitin nanocrystals.

2. A method for extracting chitin nanocrystals through electron beam irradiation comprising the steps of:

(a) irradiating a chitin-based solid material with an electron beam;

(b) washing the chitin-based solid material subjected to electron beam irradiation;

(c) adding a basic solution to the washed chitin-based solid material;

(d) high-pressure homogenizing the chitin-based solid material dispersed in an aqueous system to which the basic solution is added, to prepare a suspension containing chitin nanocrystals,

(e) neutralizing suspension containing chitin nanocrystals; and

(f) drying the neutralized suspension to obtain a chitin nanocrystal powder.

3. The method for extracting chitin nanocrystals through electron beam irradiation according to claim 1 ,

wherein the electron beam irradiation dose is 1000 to 3000 KGy.

4. The method for extracting chitin nanocrystals through electron beam irradiation according to claim 1 ,

wherein the step (i) or (a) is a step of irradiating a chitin-based solid material with an electron beam to oxidize a hydroxy group (—OH) of the chitin-based solid material to a carboxylate (—COO—) group.

5. The method for extracting chitin nanocrystals through electron beam irradiation according to claim 1 ,

wherein the step (ii) or (b) is a step of filtering and washing with water the chitin-based solid material subjected to electron beam irradiation.

6. The method for extracting chitin nanocrystals through electron beam irradiation according to claim 1 ,

wherein the step (iii) or (c) is a step of adding a basic solution to the washed chitin-based solid material to adjust the pH to 9 to 11.

7. The method for extracting chitin nanocrystals through electron beam irradiation according to claim 1 ,

wherein the step (iii) or (c) is a step of irradiating a chitin-based solid material with an electron beam to oxidize a hydroxy group (—OH) of the chitin-based solid material to a carboxylate (—COO − ) group, and

adding a basic solution thereto to introduce Na+ or K+, which is a counter ion having a charge opposite in sign to the carboxylate (—COO—) group charge.

8. The method for extracting chitin nanocrystals through electron beam irradiation according to claim 1 ,

wherein the chitin nanocrystals have an average width of 10 to 20 nm and an average length of 261 to 757 nm.

9. The method for extracting chitin nanocrystals through electron beam irradiation according to claim 1 ,

wherein the high-pressure homogenization is performed less than 1-5 times at 20 to 25° C. under a pressure of 20,000 to 25,000 psi.

10. The method for extracting chitin nanocrystals through electron beam irradiation according to claim 2 ,

wherein the step (e) is a step of injecting an air containing carbon dioxide into the suspension containing chitin nanocrystals to neutralize the suspension.

11. The method for extracting chitin nanocrystals through electron beam irradiation according to claim 2 ,

wherein the electron beam irradiation dose is 1000 to 3000 KGy.

12. The method for extracting chitin nanocrystals through electron beam irradiation according to claim 2 ,

wherein the step (i) or (a) is a step of irradiating a chitin-based solid material with an electron beam to oxidize a hydroxy group (—OH) of the chitin-based solid material to a carboxylate (—COO—) group.

13. The method for extracting chitin nanocrystals through electron beam irradiation according to claim 2 ,

wherein the step (ii) or (b) is a step of filtering and washing with water the chitin-based solid material subjected to electron beam irradiation.

14. The method for extracting chitin nanocrystals through electron beam irradiation according to claim 2 ,

wherein the step (iii) or (c) is a step of adding a basic solution to the washed chitin-based solid material to adjust the pH to 9 to 11.

15. The method for extracting chitin nanocrystals through electron beam irradiation according to claim 2 ,

wherein the step (iii) or (c) is a step of irradiating a chitin-based solid material with an electron beam to oxidize a hydroxy group (—OH) of the chitin-based solid material to a carboxylate (—COO − ) group, and

adding a basic solution thereto to introduce Na+ or K+, which is a counter ion having a charge opposite in sign to the carboxylate (—COO—) group charge.

16. The method for extracting chitin nanocrystals through electron beam irradiation according to claim 2 ,

wherein the chitin nanocrystals have an average width of 10 to 20 nm and an average length of 261 to 757 nm.

17. The method for extracting chitin nanocrystals through electron beam irradiation according to claim 2 ,

wherein the high-pressure homogenization is performed less than 1-5 times at 20 to 25° C. under a pressure of 20,000 to 25,000 psi.

Assignments (1)
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Aug 21, 2020
From: SHIN, JIHOON; LEE, HYUNHO; KIM, YEONG UN
To: KOREA RESEARCH INSTITUTE OF CHEMICAL TECHNOLOGY
Reel/Frame 053559/0840 →
Priority Claims (1)
KR 10-2019-0102697 · Aug 21, 2019 · national
Continuity (1)
Related Publication 20210054107A1 · Feb 25, 2021