Reducing gate induced drain leakage in DRAM wordline
Memory devices and methods of forming memory devices are described. The memory devices comprise two work-function metal layers, where one work-function layer has a lower work-function than the other work-function layer. The low work-function layer may reduce gate-induced drain leakage current losses. Methods of forming memory devices are also described.
1. A method of forming a memory device, the method comprising:
depositing a conformal gate oxide layer on a substrate having a plurality of trenches extending a depth into the substrate, each trench including a bottom and sidewall, the conformal gate oxide layer formed on a surface of the substrate and along the sidewall and bottom of each of the plurality of trenches;
depositing a conformal first work-function metal layer on the conformal gate oxide layer and a bulk metal layer on the conformal first work-function metal layer to form a metal layer, the metal layer comprising the conformal first work-function metal layer and the bulk metal layer;
recessing the metal layer to form a recessed metal layer; and
depositing a second work-function metal layer on the recessed metal layer,
wherein the conformal first work-function metal layer comprises a material having a work-function, the second work-function metal layer comprises a material having a work-function, the material of the second work-function metal layer comprising a metal carbide with one or more metal selected from gallium (Ga), indium (In) or thallium (Tl) or a metal silicide with one or more metal selected from aluminum (Al), gallium (Ga), indium (In) or thallium (Tl) and having a work-function that is at least 0.5 eV less than the work-function of the material of the conformal first work-function metal layer, the second work-function metal layer substantially free of polysilicon and/or doped polysilicon.
2. The method of claim 1 , wherein recessing the metal layer moves a top surface of the conformal first work-function metal layer and a top surface of the bulk metal layer to a recess depth in the plurality of trenches.
3. The method of claim 1 , wherein the second work-function metal layer has a thickness in a range of about 10 nm to about 50 nm.
4. The method of claim 1 , wherein the conformal gate oxide layer comprises one or more of silicon oxynitride (SiON), silicon oxide (SiO), or a high-κ dielectric material.
5. The method of claim 1 , further comprising etching the second work-function metal layer.
6. The method of claim 5 , further comprising depositing an insulating layer on the second work-function metal layer.
7. The method of claim 1 , wherein the conformal first work-function metal layer comprises a material having a work-function greater than or equal to 4.6 eV, the second work-function metal layer comprises a material having a work-function less than or equal to 4.05 eV.
8. The method of claim 1 , wherein the conformal first work-function metal layer comprises a material having a resistivity of greater than about 500 μΩ-cm and the second work-function metal layer comprises a material having a resistivity of less than about 500 μΩ-cm.
9. A method of forming a memory device, the method comprising:
depositing a conformal gate oxide layer on a substrate having a plurality of trenches extending a depth into the substrate, each trench including a bottom and sidewall, the conformal gate oxide layer formed on a surface of the substrate and along the sidewall and bottom of each of the plurality of trenches;
depositing a conformal first work-function metal layer on the conformal gate oxide layer and a bulk metal layer on the conformal first work-function metal layer to form a metal layer, the metal layer comprising the conformal first work-function metal layer and the bulk metal layer;
recessing the metal layer to form a recessed metal layer; and
depositing a second work-function metal layer on the recessed metal layer,
wherein the conformal first work-function metal layer comprises a material having a work-function, the second work-function metal layer comprises a material having a work-function, the material of the second work-function metal layer comprising a metal silicide with one or more metal selected from aluminum (Al), gallium (Ga), indium (In) or thallium (Tl) and having a work-function that is at least 0.5 eV less than the work-function of the material of the conformal first work-function metal layer.
10. The method of claim 9 , wherein the second work-function metal layer is substantially free of poly silicon and/or doped poly silicon.