Terminal configuration and semiconductor device
There is provided a terminal that includes a first conductive layer; a wiring layer on the first conductive layer; a second conductive layer on the wiring layer; and a conductive bonding layer which is in contact with a bottom surface and a side surface of the first conductive layer, a side surface of the wiring layer, a portion of a side surface of the second conductive layer, and a portion of a bottom surface of the second conductive layer, wherein an end portion of the second conductive layer protrudes from an end portion of the first conductive layer and an end portion of the wiring layer, and wherein the conductive bonding layer is in contact with a bottom surface of the end portion of the second conductive layer.
1. A terminal, comprising:
a first conductive layer;
a wiring layer on the first conductive layer;
a second conductive layer on the wiring layer; and
a conductive bonding layer and an external electrode which is in physical contact with a bottom surface and a side surface of the first conductive layer, a side surface of the wiring layer, a portion of a side surface of the second conductive layer, and a portion of a bottom surface of the second conductive layer,
wherein an end portion of the second conductive layer protrudes from an end portion of the first conductive layer and an end portion of the wiring layer, and
wherein the external electrode is in contact with a bottom surface of the end portion of the second conductive layer,
wherein the conductive bonding layer physically contacts the wiring layer and is spaced apart from the first conductive layer and the second conductive layer.
2. The terminal of claim 1 , wherein the second conductive layer is thicker than the first conductive layer, and
wherein the wiring layer is thinner than the first conductive layer.
3. The terminal of claim 1 , wherein a distance between the bottom surface of the first conductive layer and the bottom surface of the end portion of the second conductive layer is 100 μm or more.
4. The terminal of claim 1 , wherein the end portion of the second conductive layer protrudes 10 to 20 μm.
5. The terminal of claim 1 , wherein the conductive bonding layer includes a Ni layer, which is in contact with the bottom surface of the first conductive layer, the side surface of the wiring layer, a portion of the side surface of the second conductive layer, and a portion of the bottom surface of the second conductive layer, and an Au layer overlapping with the Ni layer.
6. The terminal of claim 1 , wherein an average surface roughness of a top surface of the second conductive layer is 2 to 5 μm.
7. The terminal of claim 1 , wherein a material of the first conductive layer is identical to a material of the second conductive layer.
8. The terminal of claim 1 , wherein the first conductive layer contains copper,
wherein the wiring layer contains titanium or tantalum nitride, and
wherein the second conductive layer contains copper.
9. The terminal of claim 1 , wherein the end portion of the wiring layer is covered with a material of the first conductive layer and a material of the second conductive layer.
10. A semiconductor device, comprising:
a terminal;
a semiconductor element electrically connected to the terminal; and
a resin covering the terminal and the semiconductor element,
wherein the terminal includes:
a first conductive layer;
a second conductive layer;
a wiring layer between the first conductive layer and the second conductive layer; and
a conductive bonding layer that physically contacts the wiring layer and is spaced apart from the first conductive layer and the second conductive layer,
wherein an end portion of the second conductive layer protrudes from an end portion of the first conductive layer and an end portion of the wiring layer, and
wherein an external electrode is in physical contact with the end portion of the second conductive layer.
11. The semiconductor device of claim 10 , wherein the second conductive layer is thicker than the first conductive layer, and
wherein the wiring layer is thinner than the first conductive layer.
12. The semiconductor device of claim 10 , wherein a distance between a bottom surface of the first conductive layer and a bottom surface of the end portion of the second conductive layer is 100 μm or more.
13. The semiconductor device of claim 10 , wherein the end portion of the second conductive layer protrudes by 10 to 20 μm.
14. The semiconductor device of claim 10 , wherein the conductive bonding layer includes a Ni layer, which is in contact with the first conductive layer, the wiring layer, and the second conductive layer, and an Au layer overlapping with the Ni layer.
15. The semiconductor device of claim 10 , wherein an average surface roughness of a top surface of the second conductive layer is 2 to 5 μm.
16. The semiconductor device of claim 10 , wherein a material of the first conductive layer is identical to a material of the second conductive layer.
17. The semiconductor device of claim 10 , wherein the first conductive layer contains copper,
wherein the wiring layer contains titanium or tantalum nitride, and
wherein the second conductive layer contains copper.
18. The semiconductor device of claim 10 , wherein the end portion of the wiring layer is covered with a material of the first conductive layer and a material of the second conductive layer.
19. The semiconductor device of claim 10 , wherein an outer side surface of the second conductive layer is exposed.