Light-emitting diode chip and preparation method therefor

1. A light-emitting diode (LED) chip, comprising:

an N-type gallium nitride (GaN) doping layer;

three sub-pixel structures respectively formed in three sub-pixel regions at a first surface of the N-type GaN doping layer, wherein each of the three sub-pixel structures comprises a blue-light quantum well structure, an interface barrier layer, a green-light quantum well structure, a charge barrier layer, and a P-type GaN doping layer that grow in sequence;

three P-type contact electrodes respectively formed on the three sub-pixel structures, and an N-type contact electrode formed in a remaining region other than the three sub-pixel regions at the first surface of the N-type GaN doping layer; and

a red-light colloidal quantum dot structure formed in a region that corresponds to a first sub-pixel region in the three sub-pixel regions and that is at a second surface of the N-type GaN doping layer.

2. The chip according to claim 1 , wherein the blue-light quantum well structure comprises N blue-light quantum well layers, and N+1 isolation layers that are used to isolate the N blue-light quantum well layers and that are alternately formed with the N blue-light quantum well layers, wherein N≥1.

3. The chip according to claim 1 , wherein the green-light quantum well structure comprises M green-light quantum well layers, and M+1 isolation layers that are used to isolate the M green-light quantum well layers and that are alternately formed with the M green-light quantum well layers, wherein M≥1.

4. The chip according to claim 1 , further comprising:

a red light filter disposed on the red-light colloidal quantum dot structure;

a blue light filter disposed in a region that corresponds to a second sub-pixel region in the three sub-pixel regions and that is at the second surface of the N-type GaN doping layer; and

a green light filter disposed in a region that corresponds to a third sub-pixel region in the three sub-pixel regions and that is at the second surface of the N-type GaN doping layer.

5. The chip according to claim 1 , further comprising:

a drive circuit connected to the three P-type contact electrodes and the N-type contact electrode.

6. The chip according to claim 1 , further comprising:

a buffer layer and a substrate that are formed at the second surface of the N-type GaN doping layer, wherein the buffer layer is adjacent to the N-type GaN doping layer, and the substrate is adjacent to the buffer layer and the red-light colloidal quantum dot structure.

7. The chip according to claim 1 , wherein the three sub-pixel regions are all circular regions, or the three sub-pixel regions are all square regions.

8. The chip according to claim 1 , wherein the N-type GaN doping layer is a GaN layer doped with silicon, and the P-type GaN doping layer is a GaN layer doped with magnesium.

9. The chip according to claim 3 , wherein the blue-light quantum well layer is a GaN layer doped with indium, the green-light quantum well layer is a GaN layer doped with indium, and a proportion of indium doped in the green-light quantum well layer is different from a proportion of indium doped in the blue-light quantum well layer.

10. A preparation method for a LED chip, comprising:

sequentially growing a buffer layer, an N-type GaN doping layer, a blue-light quantum well structure, an interface barrier layer, a green-light quantum well structure, a charge barrier layer, and a P-type GaN doping layer at a first surface of a substrate, to form a first sample;

transferring a mask pattern to the P-type GaN doping layer, to form a second sample, wherein the mask pattern comprises a plurality of sub-pixel regions and a remaining region other than the plurality of sub-pixel regions;

performing etching on the second sample based on the mask pattern, protecting structures in the plurality of sub-pixel regions, and exposing the N-type GaN doping layer in the remaining region, to form a third sample;

respectively forming a plurality of P-type contact electrodes in the plurality of sub-pixel regions in the third sample, and forming an N-type contact electrode in the remaining region, to form a fourth sample; and

respectively using at least one red-light colloidal quantum dot structure for coating in a region that is at a second surface of the substrate and that corresponds to at least one first sub-pixel region in the plurality of sub-pixel regions that is used to emit red light, to form an LED chip.

11. The method according to claim 10 , further comprising:

respectively disposing at least one red light filter on the at least one red-light colloidal quantum dot structure;

respectively disposing at least one blue light filter in a region that is at the second surface of the substrate and that corresponds to at least one second sub-pixel region in the plurality of sub-pixel regions that is used to emit blue light; and

respectively disposing at least one green light filter in a region that is at the second surface of the substrate and that corresponds to at least one third sub-pixel region in the plurality of sub-pixel regions that is used to emit green light.

12. The method according to claim 10 , further comprising:

connecting a drive circuit to the plurality of P-type contact electrodes and the N-type contact electrode through alignment by using a metal solder ball.

13. The method according to claim 10 , before the respectively using at least one red-light colloidal quantum dot structure for coating, further comprising:

performing cleavage between the LED chip and each of the substrate and the buffer layer in a laser radiation manner; wherein

the respectively using at least one red-light colloidal quantum dot structure for coating in a region that is at a second surface of the substrate and that corresponds to at least one first sub-pixel region in the plurality of sub-pixel regions that is used to emit red light comprises:

respectively using the at least one red-light colloidal quantum dot structure for coating in the region that is at the surface of the N-type GaN doping layer adjacent to the buffer layer and that corresponds to the at least one first sub-pixel region.

14. The method according to claim 10 , wherein the performing etching on the second sample based on the mask pattern, protecting structures in the plurality of sub-pixel regions, and exposing the N-type GaN doping layer in the remaining region comprises:

passivating and protecting a side surface of the LED chip and the plurality of sub-pixel regions; and

performing etching on the remaining region by using inductively coupled plasma ICP or through reactive ion etching RIE, so that the N-type GaN doping layer in the remaining region is exposed.

15. The method according to claim 10 ; wherein the respectively forming a plurality of P-type contact electrodes in the plurality of sub-pixel regions, and forming an N-type contact electrode in the remaining region comprises:

evaporating and depositing a gold-nickel alloy by using an electron beam, and respectively forming the plurality of P-type contact electrodes in the plurality of sub-pixel regions after annealing at 200° C. to 500° C.; and

sputtering indium tin oxide ITO or graphite in the remaining region, to form the N-type contact electrode.