Self-forming barrier for use in air gap formation
An etch back air gap (EBAG) process is provided. The EBAG process includes forming an initial structure that includes a dielectric layer disposed on a substrate and a liner disposed to line a trench defined in the dielectric layer. The process further includes impregnating a metallic interconnect material with dopant materials, filling a remainder of the trench with the impregnated metallic interconnect materials to form an intermediate structure and drive-out annealing of the intermediate structure. The drive-out annealing of the intermediate structure serves to drive the dopant materials out of the impregnated metallic interconnect materials and thereby forms a chemical- and plasma-attack immune material.
1. A device comprising:
a first dielectric layer;
a first interconnect, a second interconnect, and a third interconnect extending parallel to each other in a first direction in a metallization layer, the first interconnect, the second interconnect, and the third interconnect each comprising a metallic interconnect material disposed in a liner,
wherein each of the first, second, and third interconnects are disposed on a first, a second, and a third portion of the first dielectric layer, respectively,
wherein the second interconnect is disposed between, and adjacent to, each of the first interconnect and the third interconnect, and
wherein the first interconnect, the second interconnect, and the third interconnect each have a barrier comprising an oxide of manganese disposed on respective (i) outer bottom surfaces of the interconnects and (ii) first and second outer opposing sidewall surfaces of the interconnects;
a first conductive cap disposed on top of the metallic interconnect material of the first interconnect, a second conductive cap disposed on top of the metallic interconnect material of the second interconnect, and a third conductive cap disposed on top of the metallic interconnect material of the third interconnect,
wherein the barrier comprising the oxide of manganese is disposed on top of the first conductive cap, the second conductive cap, and the third conductive cap;
a first and a second air gap on opposite sides of the first interconnect in a second direction perpendicular to the first direction, each extending in the first direction, the second air gap located between the first interconnect and the second interconnect; and
a fourth and a fifth portion of the first dielectric layer on opposite sides of the third interconnect in the second direction, each without an air gap and each extending in the first direction, the fourth portion of the first dielectric layer between the second interconnect and the third interconnect.
2. The device of claim 1 , wherein the first and second air gaps each comprise tapered sides.
3. The device of claim 2 , wherein the first and second air gaps each further comprise a pointed top.
4. The device of claim 1 , wherein the liner comprises tantalum.
5. The device of claim 1 , wherein the liner comprises cobalt.
6. The device of claim 1 , wherein the liner comprises ruthenium.
7. The device of claim 1 , wherein the first dielectric layer comprises an ultra-low-k material.
8. The device of claim 1 , wherein at least one of the first conductive cap, the second conductive cap, and/or the third conductive cap comprise at least one of tantalum, cobalt, or ruthenium.
9. The device of claim 1 , wherein the device further comprises a conformal dielectric capping material surrounding three sides of the first and the second air gaps.
10. The device of claim 9 , wherein the device further comprises a second dielectric layer disposed on (i) the conformal dielectric capping material and (ii) the first and second air gaps.
11. A device comprising:
a first dielectric layer; and
a first interconnect and a non-adjacent second interconnect extending parallel to each other in a first direction in a metallization layer, the first interconnect and the second interconnect each comprising a metallic interconnect material disposed in a liner;
wherein each of the first and second interconnects are disposed on a first and a second portion of the first dielectric layer, respectively, and
wherein the first interconnect and the second interconnect each have a barrier comprising an oxide of manganese disposed on respective (i) outer bottom surfaces of the interconnects and (ii) first and second outer opposing sidewall surfaces of the interconnects;
a first conductive cap disposed on top of the metallic interconnect material of the first interconnect and a second conductive cap disposed on top of the metallic interconnect material of the second interconnect,
wherein the barrier comprising the oxide of manganese is disposed on top of the first conductive cap and the second conductive cap;
a first and a second air gap on opposite sides of the first interconnect in a second direction perpendicular to the first direction, each extending in the first direction;
a third and a fourth portion of the first dielectric layer on opposite sides of the second interconnect in the second direction, each without an air gap and each extending in the first direction; and
a second dielectric layer bordering an upper portion of each of the first and the second air gaps.
12. The device of claim 11 , wherein the first and second air gaps each comprise tapered sides.
13. The device of claim 12 , wherein the first and second air gaps each further comprise a pointed top.
14. The device of claim 11 , wherein the liner comprises tantalum.
15. The device of claim 11 , wherein the liner comprises cobalt.
16. The device of claim 11 , wherein the liner comprises ruthenium.
17. The device of claim 11 , wherein the first dielectric layer comprises an ultra-low-k material.
18. The device of claim 11 , wherein at least one of the first conductive cap or the second conductive cap comprises at least one of tantalum, cobalt, or ruthenium.
19. The device of claim 11 , wherein the device further comprises a conformal dielectric capping material surrounding three sides of the first and the second air gaps.