Low power dual-sensitivity FG-MOSFET sensor for a wireless radiation dosimeter
View Patent ↗Low-power, dual sensitivity thin oxide FG-MOSFET sensors in RF-CMOS technology for a wireless X-ray dosimeter chip, methods for radiation measurement and for charging and discharging the sensors are described. The FG-MOSFET sensor from a 0.13 μm (RF-CMOS process, includes a thin oxide layer having a device region, a source and a drain associated with the device well region, separated by a channel region, a floating gate extending over the channel region, and a floating gate extension extending over the thin oxide layer adjacent to the device well region. In a matched sensor pair for dual sensitivity radiation measurement, the floating gate and the floating gate extension of a FG-MOSFET higher sensitivity sensor are without a salicide layer or a silicide layer formed thereon and the floating gate and the floating gate extension of a FG-MOSFET lower sensitivity sensor have a salicide layer or a silicide layer formed thereon.
1. A low power floating gate metal-oxide semiconductor field-effect transistor (FG-MOSFET) sensor from a 0.13 μm radio frequency complementary metal-oxide semiconductor (RF-CMOS) process, comprising:
a thin oxide layer from the 0.13 μm RF-CMOS process comprising a device well region;
a source and a drain associated with the device well region, separated by a channel region;
a floating gate extending over the channel region; and
a floating gate extension communicating with the floating gate and extending over the thin oxide layer from the 0.13 μm RF-CMOS process adjacent the device well region,
wherein the floating gate and the floating gate extension are each without a salicide layer or a silicide layer formed thereon.
2. A dual sensitivity matched sensor pair of low power floating gate metal-oxide semiconductor field-effect transistor (FG-MOSFET) sensors from a 0.13 μm radio frequency complementary metal-oxide semiconductor (RF-CMOS) process, comprising:
a FG-MOSFET higher sensitivity sensor and a FG-MOSFET lower sensitivity sensor from the 0.13 μm RF-CMOS process on a common substrate, the FG-MOSFET higher sensitivity sensor having a higher sensitivity S 1 than a sensitivity S 2 of the FG-MOSFET lower sensitivity sensor, and the FG-MOSFET higher sensitivity sensor and the FGMOSFET lower sensitivity sensor each comprising:
a thin oxide layer from the 0.13 μm RF-CMOS process situated within a device well region;
a source and a drain associated with the device well region, separated by a channel region;
a floating gate extending over the channel region; and
a floating gate extension communicating with the floating gate and extending over a shallow trench isolation (STI) from the 0.13 μm RF-CMOS process adjacent to the device well region, wherein
the floating gate and the floating gate extension of the FG-MOSFET higher sensitivity sensor are each without a salicide layer or a silicide layer formed thereon, and
the floating gate and the floating gate extension of the FG-MOSFET lower sensitivity sensor each have a salicide layer or a silicide layer formed thereon.
3. The dual sensitivity matched sensor pair of low power FG-MOSFET sensors from a 0.13 μm RF-CMOS process according to claim 2 , wherein:
respective channel widths, W, and channel lengths, L, of the FG-MOSFET higher sensitivity sensor and the FGMOSFET lower sensitivity sensor are substantially identical.
4. The dual sensitivity matched sensor pair of low power FG-MOSFET sensors from a 0.13 μm RF-CMOS process according to claim 2 , further comprising:
a pre-charger communicatively associated with the floating gate extension for each of the FG-MOSFET higher sensitivity sensor and the FG-MOSFET lower sensitivity sensor for one or more of pre-charging and discharging the floating gate of the FG-MOSFET higher sensitivity sensor and the floating gate of the FG-MOSFET lower sensitivity sensor.
5. The dual sensitivity matched sensor pair of low power FG-MOSFET sensors from a 0.13 μm RF-CMOS process according to claim 2 , wherein:
the FG-MOSFET higher sensitivity sensor and the FG-MOSFET lower sensitivity sensor are each a PMOS floating gate transistor.
6. The dual sensitivity matched sensor pair of low power FG-MOSFET sensors from a 0.13 μm RF-CMOS process according to claim 2 , further comprising:
a shielding metal layer positioned on the FG-MOSFET higher sensitivity sensor and on the FG-MOSFET lower sensitivity sensor to isolate the FG-MOSFET higher sensitivity sensor and the FG-MOSFET lower sensitivity sensor from external radio frequency (RF) interferences.
7. The dual sensitivity matched sensor pair of low power FG-MOSFET sensors from a 0.13 μm RF-CMOS process according to claim 2 , wherein:
the floating gate of at least one or more of the FG-MOSFET higher sensitivity sensor and the FG-MOSFET lower sensitivity sensor includes a plurality of gate fingers forming the floating gate.
8. The dual sensitivity matched sensor pair of low power FG-MOSFET sensors from a 0.13 μm RF-CMOS process according to claim 2 , wherein:
the FG-MOSFET higher sensitivity sensor and the FG-MOSFET lower sensitivity sensor are monolithically integrated on a same substrate from the 0.13 μm RF-CMOS process.
9. A method for measuring a radiation dose using a radiation sensor comprising a matched sensor pair of low power floating gate metal-oxide semiconductor field-effect transistor (FG-MOSFET) sensors from a 0.13 μm radio frequency complementary metal-oxide semiconductor (RF-CMOS) process, the matched sensor pair comprising a FG-MOSFET higher sensitivity sensor and a FG-MOSFET lower sensitivity sensor from the 0.13 μm RF-CMOS process on a common substrate, the FG-MOSFET higher sensitivity sensor having a higher sensitivity than a sensitivity of the FG-MOSFET lower sensitivity sensor, and the FG-MOSFET higher sensitivity sensor and the FGMOSFET lower sensitivity sensor each including a thin oxide layer from the 0.13 μm RF-CMOS process, a source and a drain associated with a device well region, separated by a channel region, a floating gate extending over the channel region, and a floating gate extension communicating with the floating gate and extending over the thin oxide layer from the 0.13 μm RF-CMOS process adjacent to the device well region, wherein the floating gate and the floating gate extension of the FG-MOSFET higher sensitivity sensor are each without a salicide layer or a silicide layer formed thereon, and the floating gate and the floating gate extension of the FG-MOSFET lower sensitivity sensor each have a salicide layer or a silicide layer formed thereon, comprising the steps of:
pre-charging the floating gate of each of the FG-MOSFET higher sensitivity sensor and the FG-MOSFET lower sensitivity sensor to a predetermined voltage value;
exposing the FG-MOSFET higher sensitivity sensor and the FG-MOSFET lower sensitivity sensor to radiation from a radiation source;
measuring a drain source channel current I DS for each of the FG-MOSFET higher sensitivity sensor and the FG-MOSFET lower sensitivity sensor exposed to the radiation from the radiation source for a given radiation duration time T;
determining a first sensitivity S 1 corresponding to the measured drain source channel current I DS at the given radiation duration time T for the FG-MOSFET higher sensitivity sensor; and
determining a second sensitivity S 2 corresponding to the measured drain source channel current I DS at the given radiation duration time T for the FG-MOSFET lower sensitivity sensor.
10. The method for measuring a radiation dose using a radiation sensor comprising a matched sensor pair of low power FG-MOSFET sensors from a 0.13 μm RF-CMOS process according to claim 9 , wherein:
a measurement of a radiation dose received by the FG-MOSFET higher sensitivity sensor and a measurement of a radiation dose received by the FG-MOSFET lower sensitivity sensor of the matched sensor pair at the given radiation duration time T corresponds to the two sensitivities, S 1 and S 2 , of the matched sensor pair.
11. The method for measuring a radiation dose using a radiation sensor comprising a matched sensor pair of low power FG-MOSFET sensors from a 0.13 μm RF-CMOS process according to claim 9 , wherein:
a radiation dose respectively received by each of the FG-MOSFET sensors of the matched sensor pair at the given radiation duration time T corresponds to the two sensitivities, S 1 and S 2 , of the matched sensor pair.
12. The method for measuring a radiation dose using a radiation sensor comprising a matched sensor pair of low power FG-MOSFET sensors from a 0.13 μm RF-CMOS process according to claim 9 , wherein:
pre-charging the floating gate of each of the FG-MOSFET higher sensitivity sensor and the FG-MOSFET lower sensitivity sensor to the predetermined voltage value includes pre-charging by applying negative voltage pulses of −7.0 volts (V) having a pulse width of 0.5 microseconds (μs) to the floating gate of each of the FG-MOSFET higher sensitivity sensor and the FG-MOSFET lower sensitivity sensor.
13. The method for measuring a radiation dose using a radiation sensor comprising a matched sensor pair of low power FG-MOSFET sensors from a 0.13 μm RF-CMOS process according to claim 12 , further comprising the step of:
discharging the floating gate of each of the FG-MOSFET higher sensitivity sensor and the FG-MOSFET lower sensitivity sensor after delivery of the radiation from the radiation source by applying positive voltage pulses of 7.0 volts (V) having a pulse width of 0.5 microseconds (μs) to the floating gate of each of the FG-MOSFET higher sensitivity sensor and the FG-MOSFET lower sensitivity sensor to enable the FG-MOSFET higher sensitivity sensor and the FG-MOSFET lower sensitivity sensor to measure another radiation dose.
14. The method for measuring a radiation dose using a radiation sensor comprising a matched sensor pair of low power FG-MOSFET sensors from a 0.13 μm RF-CMOS process according to claim 9 , further comprising the step of:
discharging the floating gate of each of the FG-MOSFET higher sensitivity sensor and the FG-MOSFET lower sensitivity sensor after delivery of the radiation from the radiation source by applying positive voltage pulses of 7.0 volts (V) having a pulse width of 0.5 microseconds (μs) to the floating gate of each of the FG-MOSFET higher sensitivity sensor and the FG-MOSFET lower sensitivity sensor to enable the FG-MOSFET higher sensitivity sensor and the FG-MOSFET lower sensitivity sensor to measure another radiation dose.
15. A method for pre-charging a low power floating gate metal-oxide semiconductor field-effect transistor (FG-MOSFET) sensor from a 0.13 μm radio frequency complementary metal-oxide semiconductor (RF-CMOS) process for radiation measurements, comprising the step of:
pre-charging a floating gate of the FG-MOSFET sensor by applying negative voltage pulses of −7.0 volts (V) having a pulse width of 0.5 microseconds (μs) to the floating gate.
16. The method for pre-charging a low power FG-MOSFET sensor from a 0.13 μm RF-CMOS process for radiation measurements according to claim 15 , further comprising the step of:
discharging the floating gate of the FG-MOSFET sensor after delivery of radiation from a radiation source to the FG-MOSFET sensor by applying to the floating gate positive voltage pulses of 7.0 volts (V) having a pulse width of 0.5 microseconds (μs) to enable the FG-MOSFET sensor to measure another radiation dose.