Memory system
A memory system has a nonvolatile memory which comprises memory cells capable of storing 4-bit data of first to fourth bits by sixteen threshold regions including a first threshold region corresponding to an erased state and second to sixteenth threshold regions having higher voltage levels than a voltage level of the first threshold region corresponding to a written state; and a controller which causes the nonvolatile memory to execute a first program for writing data of the first bit and the second bit and then causes the nonvolatile memory to execute a second program for writing data of the third bit and the fourth bit. The controller controls such that the threshold region is any threshold region of a seventeenth threshold region corresponding to an erased state and eighteenth to twentieth threshold regions having higher voltage levels than that of the seventeenth threshold region corresponding to a written state.
1. A memory system comprising:
a nonvolatile memory which comprises a plurality of memory cells capable of storing 4-bit data of first to fourth bits by sixteen threshold regions including a first threshold region indicating an erased state for erasing data and second to sixteenth threshold regions having higher voltage levels than a voltage level of the first threshold region and indicating a written state for writing data; and
a controller configured to cause the nonvolatile memory to execute a first program for writing data of the first bit and the second bit and then cause the nonvolatile memory to execute a second program for writing data of the third bit and the fourth bit, wherein
among fifteen boundaries existing between adjacent threshold regions among the first to sixteenth threshold regions, the number of first boundaries used for determining a value of the data of the first bit, the number of second boundaries used for determining a value of the data of the second bit, the number of third boundaries used for determining a value of the data of the third bit, and the number of fourth boundaries used for determining a value of the data of the fourth bit are 1, 4, 5, 5 or 4, 1, 5, 5 in order,
the controller is configured to cause the nonvolatile memory to execute the first program such that the threshold region in the memory cell is any threshold region of a seventeenth threshold region indicating an erased state for erasing data and eighteenth to twentieth threshold regions having higher voltage levels than a voltage level of the seventeenth threshold region and indicating a written state for writing data according to the data of the first bit and the second bit,
the n-th threshold region has a higher voltage level than the (n−1)-th threshold region (n is a natural number of two or more and sixteen or less),
the k-th threshold region has a higher voltage level than the (k−1)-th threshold region (k is a natural number of eighteen or more and twenty or less),
the controller is configured to cause the nonvolatile memory to execute the second program such that the threshold region in the memory cell is any threshold region of four threshold regions among the first to sixteenth threshold regions from any threshold region of the seventeenth to twentieth threshold regions according to the data of the third bit and the fourth bit, and
the number of threshold regions between a threshold region having a lowest voltage level and a threshold region having a highest voltage level among the four threshold regions is four or less.
2. The memory system according to claim 1 , wherein
a value of one bit of the first to fourth bits is inverted between adjacent threshold regions of the first to sixteenth threshold regions, and
the first bit, the second bit, the third bit, and the fourth bit are different bits among a least significant bit, a second least significant bit, a second most significant bit, and a most significant bit.
3. The memory system according to claim 1 , wherein
the controller is configured
to cause the nonvolatile memory to execute the second program such that the threshold region becomes any threshold region of four twenty-first threshold regions among the first to sixteenth threshold regions in the case where the nonvolatile memory is caused to execute the second program such that the seventeenth threshold region becomes any threshold region of the first to sixteenth threshold regions,
to cause the nonvolatile memory to execute the second program such that the threshold region becomes any threshold region of four twenty-second threshold regions among the first to sixteenth threshold regions in the case where the nonvolatile memory is caused to execute the second program such that the eighteenth threshold region becomes any threshold region of the first to sixteenth threshold regions,
to cause the nonvolatile memory to execute the second program such that the threshold region becomes any threshold region of four twenty-third threshold regions among the first to sixteenth threshold regions in the case where the nonvolatile memory is caused to execute the second program such that the nineteenth threshold region becomes any threshold region of the first to sixteenth threshold regions, and
to cause the nonvolatile memory to execute the second program such that the threshold region becomes any threshold region of four twenty-fourth threshold regions among the first to sixteenth threshold regions in the case where the nonvolatile memory is caused to execute the second program such that the twentieth threshold region becomes any threshold region of the first to sixteenth threshold regions,
all of the four twenty-third threshold region and the four twenty-fourth threshold region have a higher voltage level than any threshold region of the four twenty-first threshold regions and the four twenty-second threshold regions, and
a threshold region having a highest voltage level among the four twenty-first threshold regions has a higher voltage level than a threshold region having a lowest voltage level among the four twenty-second threshold regions, and all of the four twenty-fourth threshold regions have a higher voltage level than any threshold region of the four twenty-third threshold regions, or
a threshold region having a highest voltage level among the four twenty-third threshold regions has a higher voltage level than a threshold region having a lowest voltage level among the four twenty-fourth threshold regions, and all of the four twenty-second threshold regions have a higher voltage level than any threshold region of the four twenty-first threshold regions.
4. The memory system according to claim 3 , wherein
a threshold region having a lowest voltage level among the four twenty-second threshold regions has a higher voltage level than a threshold region having a lowest voltage level among the four twenty-first threshold regions,
a threshold region having a highest voltage level among the four twenty-second threshold regions has a higher voltage level than a threshold region having a highest voltage level among the four twenty-first threshold regions,
a threshold region having a lowest voltage level among the four twenty-fourth threshold regions has a higher voltage level than a threshold region having a lowest voltage level among the four twenty-third threshold regions, and
a threshold region having a highest voltage level among the four twenty-fourth threshold regions has a higher voltage level than a threshold region having a highest voltage level among the four twenty-third threshold regions.
5. The memory system according to claim 3 , wherein
the eighteenth threshold region has a lower voltage level than a boundary between two threshold regions having different values of the first bit among the first to sixteenth threshold regions at end of the second program, and
the twentieth threshold region has a greater voltage level than the boundary.
6. The memory system according to claim 1 , wherein
the plurality of memory cells in the nonvolatile memory comprise a plurality of first memory cells connected to a first word line and a plurality of second memory cells connected to a second word line adjacent to the first word line, and
the controller is configured to perform the first program on the plurality of second memory cells after performing the first program on the plurality of first memory cells, and perform the second program on the plurality of first memory cells after performing the first program on the plurality of second memory cells.
7. The memory system according to claim 1 , wherein
the nonvolatile memory comprises a control unit that is configured to read data programmed by the first program and determine a threshold voltage in the second program based on the read data.
8. The memory system according to claim 1 , wherein
the nonvolatile memory comprises the control unit that is configured to read the first bit data and the second bit data programmed by the first program in response to an execution request of the second program from the controller, and perform the second program based on the read data and data of the third bit and fourth bit.
9. A memory system comprising:
a nonvolatile memory which comprises a plurality of memory cells capable of storing 4-bit data of first to fourth bits by sixteen threshold regions including a first threshold region indicating an erased state for erasing data and second to sixteenth threshold regions having higher voltage levels than a voltage level of the first threshold region and indicating a written state for writing data; and
a controller configured to cause the nonvolatile memory to execute a first program for writing data of the first bit and the second bit and then cause the nonvolatile memory to execute a second program for writing data of the third bit and the fourth bit, wherein
the n-th threshold region has a higher voltage level than the (n−1)-th threshold region (n is a natural number of two or more and sixteen or less), and
among fifteen boundaries existing between adjacent threshold regions among the first to sixteenth threshold regions, the number of first boundaries used for determining a value of the data of the first bit, the number of second boundaries used for determining a value of the data of the second bit, the number of third boundaries used for determining a value of the data of the third bit, and the number of fourth boundaries used for determining a value of the data of the fourth bit are 2, 3, 5, 5 or 3, 2, 5, 5 in order.
10. The memory system according to claim 9 , wherein
the controller is configured to cause the nonvolatile memory to execute the first program such that the threshold region in the memory cell is any threshold region of a seventeenth threshold region indicating an erased state for erasing data and eighteenth to twentieth threshold regions having higher voltage levels than a voltage level of the seventeenth threshold region and indicating a written state for writing data according to the data of the first bit and the second bit,
the n-th threshold region has a higher voltage level than the (n−1)-th threshold region (n is a natural number of two or more and sixteen or less),
the k-th threshold region has a higher voltage level than the (k−1)-th threshold region (k is a natural number of eighteen or more and twenty or less),
the controller is configured to cause the nonvolatile memory to execute the second program such that the threshold region in the memory cell is any threshold region of four threshold regions among the first to sixteenth threshold regions from any threshold region of the seventeenth to twentieth threshold regions according to the data of the third bit and the fourth bit, and
the number of threshold regions between a threshold region having a lowest voltage level and a threshold region having a highest voltage level among the four threshold regions is four or less.
11. A memory system comprising:
a nonvolatile memory which comprises a plurality of memory cells capable of storing 4-bit data of first to fourth bits by sixteen threshold regions including a first threshold region indicating an erased state for erasing data and second to sixteenth threshold regions having higher voltage levels than a voltage level of the first threshold region and indicating a written state for writing data; and
a controller configured to cause the nonvolatile memory to execute a first program for writing data of the first bit and the second bit and then cause the nonvolatile memory to execute a second program for writing data of the third bit and the fourth bit, wherein
the n-th threshold region has a higher voltage level than the (n−1)-th threshold region (n is a natural number of two or more and sixteen or less), and
among fifteen boundaries existing between adjacent threshold regions among the first to sixteenth threshold regions, the number of first boundaries used for determining a value of the data of the first bit, the number of second boundaries used for determining a value of the data of the second bit, the number of third boundaries used for determining a value of the data of the third bit, and the number of fourth boundaries used for determining a value of the data of the fourth bit are 4, 3, 4, 4 or 3, 4, 4, 4 or 4, 4, 3, 4 or 4, 4, 4, 3 in order.
12. The memory system according to claim 11 , wherein
the controller is configured to cause the nonvolatile memory to execute the first program such that the threshold region in the memory cell is any threshold region of a seventeenth threshold region indicating an erased state for erasing data and eighteenth to twentieth threshold regions having higher voltage levels than a voltage level of the seventeenth threshold region and indicating a written state for writing data according to the data of the first bit and the second bit,
the controller is configured to cause the nonvolatile memory to execute the second program such that the threshold region in the memory cell is any threshold region of four threshold regions among the first to sixteenth threshold regions from any threshold region of the seventeenth to twentieth threshold regions according to the data of the third bit and the fourth bit, and
the number of threshold regions between a threshold region having a lowest voltage level and a threshold region having a highest voltage level among the four threshold regions is six or less.
13. The memory system according to claim 11 , wherein
a value of one bit of the first to fourth bits is inverted between adjacent threshold regions of the first to sixteenth threshold regions, and
the first bit, the second bit, the third bit, and the fourth bit are different bits among a least significant bit, a second least significant bit, a second most significant bit, and a most significant bit.
14. A memory system comprising:
a nonvolatile memory which comprises a plurality of memory cells capable of storing 4-bit data of first to fourth bits by sixteen threshold regions including a first threshold region indicating an erased state for erasing data and second to sixteenth threshold regions having higher voltage levels than a voltage level of the first threshold region and indicating a written state for writing data; and
a controller configured to cause the nonvolatile memory to execute a first program for writing data of the first bit and then cause the nonvolatile memory to execute a second program for writing data of the second bit, the third bit, and the fourth bit.
15. The memory system according to claim 14 , wherein
the n-th threshold region has a higher voltage level than the (n−1)-th threshold region (n is a natural number of two or more and sixteen or less),
the controller is configured to cause the nonvolatile memory to execute the first program such that the threshold region in the memory cell is any threshold region of a seventeenth threshold region indicating an erased state for erasing data and an eighteenth threshold region having higher voltage levels than a voltage level of the seventeenth threshold region and indicating a written state for writing data according to the data of the first bit, and
the controller is configured to cause the nonvolatile memory to execute the second program such that the threshold region in the memory cell becomes any threshold region among the first to eighth threshold regions from the seventeenth threshold region or such that the threshold region becomes any threshold region among the ninth to sixteenth threshold regions from the eighteenth threshold region according to the data of the third bit and the fourth bit.
16. The memory system according to claim 14 , wherein
among fifteen boundaries existing between adjacent threshold regions among the first to sixteenth threshold regions, the number of first boundaries used for determining a value of the data of the first bit, the number of second boundaries used for determining a value of the data of the second bit, the number of third boundaries used for determining a value of the data of the third bit, and the number of fourth boundaries used for determining a value of the data of the fourth bit are 1, 4, 5, 5 or 1, 6, 4, 4, or 1, 2, 6, 6 or 1, 5, 5, 4 or 1, 5, 4, 5 or 1, 4, 6, 4 or 1, 4, 4, 6 or 1, 5, 6, 3 or 1, 5, 3, 6 or 1, 3, 6, 5 or 1, 3, 5, 6 or 1, 6, 5, 3 or 1, 6, 3, 5 in order.
17. The memory system according to claim 14 , wherein
one of the first bit and the second bit is a least significant bit, and another is a second least significant bit, and
one of the third bit and the fourth bit is a second most significant bit, and another is a most significant bit.
18. A memory system comprising:
a nonvolatile memory which comprises a plurality of memory cells capable of storing 4-bit data of first to fourth bits by sixteen threshold regions including a first threshold region indicating an erased state for erasing data and second to sixteenth threshold regions having higher voltage levels than a voltage level of the first threshold region and indicating a written state for writing data and
a controller configured to cause the nonvolatile memory to execute a first program for writing data of the first bit, the second bit, and the third bit, and then cause the nonvolatile memory to execute a second program for writing data of the fourth bit.
19. The memory system according to claim 18 , wherein
among fifteen boundaries existing between adjacent threshold regions among the first to sixteenth threshold regions, the number of first boundaries used for determining a value of the data of the first bit, the number of second boundaries used for determining a value of the data of the second bit, the number of third boundaries used for determining a value of the data of the third bit, and the number of fourth boundaries used for determining a value of the data of the fourth bit are 2, 3, 2, 8 or 2, 2, 3, 8 or 3, 2, 2, 8 or 1, 3, 3, 8 or 3, 1, 3, 8 or 3, 3, 1, 8 or 1, 2, 4, 8 or 1, 4, 2, 8 or 2, 1, 4, 8 or 2, 4, 1, 8 or 4, 1, 2, 8 or 4, 2, 1, 8 in order.
20. The memory system according to claim 18 , wherein
a value of one bit of the first to fourth bits is inverted between adjacent threshold regions of the first to sixteenth threshold regions, and
the first bit, the second bit, and the third bit are different bits among a least significant bit, a second least significant bit, and a second most significant bit.
21. The memory system according to claim 1 , wherein
the nonvolatile memory comprises at least a first word line and a second word line to which two or more of the memory cells are each connected, and
the controller is configured to instruct the nonvolatile memory to execute continuous execution of the first program for the memory cell connected to the first word line and the second program for the memory cell connected to the second word line by inputting continuous commands and data.