Semiconductor device and method of manufacturing the semiconductor device
A semiconductor device, including: a first semiconductor element formed at a first surface on a substrate, and has a first electrode portion formed thereon a first metal silicide film; a second semiconductor element formed at a second surface at a higher position than the first surface, and has a second electrode portion formed thereon a second metal silicide film and a hydrogen supply film configured to cover a part of an upper portion of the second metal silicide film; an interlayer insulating film formed on the first semiconductor element and the second semiconductor element; a first contact hole formed through the interlayer insulating film until the first metal silicide film; a second contact hole formed through the interlayer insulating film and the hydrogen supply film until the second metal silicide film; and a metal wiring embedded in each of the first contact hole and the second contact hole.
1. A semiconductor device, comprising:
a first semiconductor element which is formed at a first surface on a substrate, and has a first electrode portion having formed thereon a first metal silicide film;
a second semiconductor element which is formed at a second surface at a higher position than the first surface, and has a second electrode portion having formed thereon a second metal silicide film and a hydrogen supply film configured to cover at least a part of an upper portion of the second metal silicide film, wherein the hydrogen supply film does not cover a center portion of the second semiconductor element;
an interlayer insulating film formed on the first semiconductor element and the second semiconductor element;
a first contact hole formed so as to pass through the interlayer insulating film on the first electrode portion so as to reach the first metal silicide film;
a second contact hole formed so as to pass through the interlayer insulating film and the hydrogen supply film on the second electrode portion so as to reach the second metal silicide film; and
a metal wiring embedded in each of the first contact hole and the second contact hole.
2. The semiconductor device according to claim 1 , further comprising a metal film formed in the vicinity of an upper portion of the second semiconductor element.
3. The semiconductor device according to claim 1 ,
wherein the second semiconductor element is a resistive element formed from a polycrystalline silicon film having a low-concentration impurity region and high-concentration impurity regions, and
wherein the hydrogen supply film is formed at a position apart from the low-concentration impurity region.
4. The semiconductor device according to claim 3 , further comprising a hydrogen barrier film formed on the low-concentration impurity region.
5. A method of manufacturing a semiconductor device, comprising:
forming a first semiconductor element at a first surface on a substrate, the first semiconductor element having a first electrode portion that is formed thereon a first metal silicide film;
forming a second semiconductor element at a second surface at a higher position than the first surface, the second semiconductor element having a second electrode portion that is formed thereon a second metal silicide film and a hydrogen supply film configured to cover a part of an upper portion of the second metal silicide film, wherein the hydrogen supply film does not cover a center portion of the second semiconductor element;
forming an interlayer insulating film on the first semiconductor element and the second semiconductor element;
forming a first contact hole so as to pass through the interlayer insulating film on the first electrode portion so as to reach the first metal silicide film;
forming a second contact hole so as to pass through the interlayer insulating film and the hydrogen supply film on the second electrode portion so as to reach the second metal silicide film; and
embedding a metal wiring into each of the first contact hole and the second contact hole.