Semiconductor light emitting device and manufacturing method of semiconductor light emitting device
Provided is a semiconductor light emitting device including a growth substrate; a pillar-shaped semiconductor layer formed on the growth substrate; and a buried semiconductor layer formed to cover the pillar-shaped semiconductor layer, wherein the pillar-shaped semiconductor layer has an n-type nanowire layer formed at a center, an active layer formed on an outermore side than the n-type nanowire layer, a p-type semiconductor layer formed on an outermore side than the active layer and a tunnel junction layer formed on an outermore side than the p-type semiconductor layer, and wherein at least a part of the pillar-shaped semiconductor layer is provided with a removed region formed by removing from the buried semiconductor layer to a part of the tunnel junction layer.
1. A semiconductor light emitting device comprising:
a growth substrate;
a pillar-shaped semiconductor layer formed on the growth substrate; and
a buried semiconductor layer formed to cover the pillar-shaped semiconductor layer,
wherein the pillar-shaped semiconductor layer has an n-type nanowire layer formed at a center, an active layer formed on an outermore side than the n-type nanowire layer, a p-type semiconductor layer formed on an outermore side than the active layer and a tunnel junction layer formed on an outermore side than the p-type semiconductor layer, and
wherein at least a part of the pillar-shaped semiconductor layer is provided with a removed. region formed by removing from the buried semiconductor layer to apart of the tunnel junction layer.
2. The semiconductor light emitting device according to claim 1 , wherein a plurality of the pillar-shaped semiconductor layers is provided, and the removed region is provided over the plurality of pillar-shaped semiconductor layers.
3. The semiconductor light emitting device according to claim 1 , wherein the removed region is removed to a part of the p-type semiconductor layer.
4. The semiconductor light emitting device according to claim 1 , wherein the removed region is removed to a part of the active layer.
5. The semiconductor light emitting device according to claim 1 , wherein the removed region is removed to a part of the n-type nanowire layer.
6. The semiconductor light emitting device according to claim 1 , wherein an insulating film is formed on the removed region, and a transparent electrode is formed covering at least a part of the buried semiconductor layer and the removed region.
7. The semiconductor light emitting device according to claim 1 , wherein a high-resistance layer is formed on a top part of the n-type nanowire layer.
8. A growth method of a semiconductor light emitting device, the growth method comprising:
a mask process of forming a mask layer having an opening portion on a growth substrate;
a growth process of forming a pillar-shaped semiconductor layer in the opening portion by using selective growth; and
a burying process of growing a buried semiconductor layer on the growth substrate so as to cover the pillar-shaped semiconductor layer,
wherein the growth process comprises a process of forming an n-type nanowire layer, a process of forming an active layer on an outermore side than the n-type nanowire layer, a process of forming a p-type semiconductor layer on an outermore side than the active layer, and a process of forming a tunnel junction layer on an outermore side than the p-type semiconductor layer, and
wherein the growth method comprises:
a removing process of forming at least a part of the pillar-shaped semiconductor layer with a removed region by removing from the buried semiconductor layer to a part of the tunnel junction layer, after the burying process, and
an activation process of annealing the p-type semiconductor layer after the removing process.
9. A semiconductor light emitting device comprising:
a growth substrate; and
a pillar-shaped semiconductor layer formed on the growth substrate,
wherein the pillar-shaped semiconductor layer has an n-type nanowire layer formed at a center, an active layer formed on an outermore side than the n-type nanowire layer, and a p-type semiconductor layer formed on an outermore side than the active layer, and
wherein an inner surface protection layer made of a nitride semiconductor material containing Al is provided on a further n-side than the active layer.
10. The semicmductor light emitting device according to claim 9 , wherein the inner surface protection layer is provided covering an outer periphery of the n-type nanowire layer and in contact with the active laver.
11. The semiconductor light emitting device according to claim 9 , wherein at least Al is contained in the inner surface protection layer, and a maximum composition ratio of Al is 0.06 mol % or less.
12. The semiconductor light emitting device according to claim 9 , wherein a film thickness of the inner surface protection layer is equal to or greater than 1 nm and equal to or smaller than 100 nm.
13. A semiconductor light emitting device comprising:
a growth substrate; and
a pillar-shaped semiconductor layer formed on the growth substrate,
wherein the pillar-shaped semiconductor layer has an n-type nanowire layer formed at a center, an active layer fonned on an outermore side than the n-type nanowire layer, and a p-type semiconductor layer formed on an outermore side than the active layer, and
wherein an outer surface protection layer made of a nitride semiconductor material containing Al is provided covering an outer periphery of the active layer.
14. A semiconductor light emitting device comprising:
a growth substrate; and
a pillar-shaped semiconductor layer formed on the growth substrate,
wherein the pillar-shaped semiconductor layer has an n-type nanowire layer formed at a center, an active layer fanned on an outermore side than the n-type nanowire layer, and a p-type semiconductor layer formed on an outermore side than the active layer, and
wherein an outer surface protection layer made of a nitride semiconductor material containing Al is provided covering an outer periphery of a tunnel junction layer.
15. The semiconductor light emitting device according to claim 9 , wherein the inner surface protection layer is provided on a bottom part of the n-type nanowire layer.
16. The semiconductor light emitting device according to claim 9 , further comprising a buried semiconductor layer formed to cover the pillar-shaped semiconductor layer.
17. The semiconductor fight emitting device according to claim 9 , wherein a tunnel junction layer is formed on an outermore side than the p-type semiconductor layer.
18. A growth method of a semiconductor light emitting device comprising:
a mask process of forming a mask layer having an opening portion on a growth substrate; and
a growth process of forming a pillar-shaped semiconductor layer in the opening portion by using selective growth,
wherein the growth process comprises:
a process of forming an n-type nanowire layer,
a process of forming an active layer on an outermore side than the n-type nanowire layer,
a process of forming an inner surface protection layer in contact with lower sides of the n-type nanowire layer and the active layer, the inner surface protection layer being made of a nitride semiconductor material containing Al, and
a process of forming a p-type semiconductor layer on an outermoreside than the active layer.