Three-dimensional memory device and method

1. A method of manufacturing a semiconductor device, the method comprising:

etching a first trench in a multilayer stack, the multilayer stack comprising alternating dielectric layers and sacrificial layers;

depositing a first conductive material within the first trench;

filling a remainder of the first trench with a first dielectric material, the first dielectric material being a single dielectric material filling each part of the first trench that is not filled by the first conductive material;

after the filling the remainder of the first trench, etching a second trench in the multilayer stack;

depositing a second conductive material within the second trench;

filling a remainder of the second trench with a second dielectric material;

etching the first conductive material and the second conductive material; and

after the etching the first conductive material and the second conductive material, depositing a channel material into the first trench.

2. The method of claim 1 , further comprising:

planarizing the second dielectric material with a portion of the dielectric layers after the filling the remainder of the second trench; and

removing the portion of the dielectric layers prior to the etching the first conductive material.

3. The method of claim 2 , wherein the removing the portion of the dielectric layers forms an “H”-shaped structure.

4. The method of claim 1 , wherein the first conductive material comprises a first glue layer and wherein the depositing the second conductive material deposits a second glue layer in physical contact with the first glue layer.

5. The method of claim 1 , further comprising recessing the sacrificial layers prior to the depositing the first conductive material.

6. The method of claim 1 , further comprising planarizing the first dielectric material and the first conductive material prior to the etching the second trench.

7. The method of claim 1 , further comprising depositing a ferroelectric material into the first trench.

8. A method of manufacturing a semiconductor device, the method comprising:

forming an alternating stack of first dielectric materials and sacrificial materials;

forming a first portion of a first word line within the alternating stack, the forming the first portion of a first word line comprising:

etching a first trench in the alternating stack;

forming first recesses by recessing first portions of the sacrificial material exposed within the first trench;

depositing a first conductive material into the first recesses; and

depositing a second dielectric material to fill a remainder of the first trench, wherein the second dielectric material extends into each portion of the first trench not filled by the first conductive material; and

forming a second portion of the first word line within the alternating stack, the forming the second portion of the first word line comprising:

etching a second trench in the alternating stack;

forming second recesses by removing a second portion of the sacrificial material exposed within the second trench, wherein the removing the second portion of the sacrificial material exposes a portion of the first conductive material;

depositing a second conductive material into the second recesses; and

depositing a third dielectric material to fill a remainder of the second trench.

9. The method of claim 8 , further comprising removing a top layer of the first dielectric materials after the depositing the third dielectric material.

10. The method of claim 9 , wherein the removing the top layer of the first dielectric materials leaves a “U”-shaped opening, wherein sidewalls of the “U”-shaped opening comprise the first conductive material and the second conductive material.

11. The method of claim 8 , further comprising planarizing the third dielectric material after the depositing the third dielectric material.

12. The method of claim 8 , wherein the third dielectric material is different from the second dielectric material.

13. The method of claim 8 , further comprising:

removing the second dielectric material and the third dielectric material;

etching the first conductive material and the second conductive material;

depositing a ferroelectric material adjacent to the first conductive material and the second conductive material; and

depositing a channel material adjacent to the ferroelectric material.

14. The method of claim 8 , wherein the first conductive material and the second conductive material are part of a word line of a memory cell.

15. A method of manufacturing a semiconductor device, the method comprising:

depositing a ferroelectric material over a substrate; and

depositing a channel material over the ferroelectric material, wherein a first dielectric material extends away from a second side of the ferroelectric material opposite the first side and wherein a second dielectric material extends away from the second side of the ferroelectric material, wherein a first conductive material extends away from the second side of the ferroelectric material between the first dielectric material and the second dielectric material, the first conductive material comprising a first bulk material and a first glue layer, and wherein a second conductive material extends away from the first conductive material between the first dielectric material and the second dielectric material, the second conductive material comprising a second bulk material and a second glue layer, the second glue layer being in physical contact with the first glue layer, wherein the first conductive material and the second conductive material form a word line of a memory cell.

16. The method of claim 15 , further comprising forming a second ferroelectric material in physical contact with the second conductive material.

17. The method of claim 15 , wherein a third dielectric material extends away from the second side of the ferroelectric material, wherein a third conductive material extends away from the second side of the ferroelectric material between the third dielectric material and the second dielectric material, the third conductive material comprising a third bulk material and a third glue layer, and wherein a fourth conductive material extends away from the third conductive material between the third dielectric material and the second dielectric material, the fourth conductive material comprising a fourth bulk material and a fourth glue layer, the fourth glue layer being in physical contact with the third glue layer.

18. The method of claim 15 , wherein the first conductive material and the second conductive material collectively have a width of about 80 nm.

19. The method of claim 15 , wherein the memory cell is part of a three dimensional memory array.

20. The method of claim 15 , wherein the ferroelectric material comprises hafnium zirconium oxide.