Semiconductor package

1. A semiconductor package comprising:

a redistribution substrate including a first redistribution layer;

a semiconductor chip on the redistribution substrate and electrically connected to the first redistribution layer;

a first molding member on the redistribution substrate and directly on the semiconductor chip;

a second redistribution layer on the first molding member and having a redistribution pad;

a vertical connection structure between the redistribution substrate and the second redistribution layer and electrically connecting the first redistribution layer and the second redistribution layer to each other;

a second molding member on the first molding member and at least a portion of the second redistribution layer;

an electrical connection pad on an uppermost surface of the second molding member and electrically connected to the second redistribution layer; and

a passivation layer on the second molding member and having an opening exposing at least a portion of the electrical connection pad,

wherein the electrical connection pad includes a conductor layer, including a first metal, and a contact layer on the conductor layer and including a second metal,

wherein the redistribution pad includes a third metal, different from the first metal and the second metal,

wherein the portion of the electrical connection pad, exposed by the opening, has a width greater than a width of the redistribution pad, and

wherein the vertical connection structure extends through the first molding member.

2. The semiconductor package of claim 1 , wherein the second molding member includes a base molding layer, on an upper surface of the first molding member, and a build-up molding layer on an upper surface of the base molding layer,

wherein the redistribution pad of the second redistribution layer is on an upper surface of the base molding layer and the build-up molding layer is on a portion of the redistribution pad,

wherein the electrical connection pad is on an upper surface of the build-up molding layer,

wherein the second redistribution layer extends from one side of the redistribution pad along the upper surface of the base molding layer and has a redistribution pattern electrically connected to the vertical connection structure through a backside via extending through the base molding layer,

wherein the redistribution pad includes a first backside redistribution pad and a second backside redistribution pad that are adjacent to each other,

wherein the electrical connection pad includes a first electrical connection pad above the first backside redistribution pad, and a second electrical connection pad above the second backside redistribution pad in a cross-sectional view of the semiconductor package in which the redistribution substrate serves as a base reference plane,

wherein the redistribution pattern includes a plurality of redistribution patterns extending between the first backside redistribution pad and the second backside redistribution pad, and

wherein at least a portion of the plurality of redistribution patterns vertically overlap at least one of the first electrical connection pad and the second electrical connection pad in the cross-sectional view of the semiconductor package.

3. The semiconductor package of claim 2 , wherein a distance between the first electrical connection pad and the second electrical connection pad is less than a distance between the first backside redistribution pad and the second backside redistribution pad.

4. The semiconductor package of claim 1 , wherein the electrical connection pad has an external region in which a plurality of first grooves are formed that extend through the contact layer and the conductor layer,

wherein the passivation layer is on the electrical connection pad.

5. The semiconductor package of claim 4 , wherein the electrical connection pad has an internal region in which a plurality of second grooves are formed that extends through the contact layer and the conductor layer,

wherein the internal region of the electrical connection pad is free of the passivation layer.

6. The semiconductor package of claim 1 , further comprising:

an electrical connection pattern on the uppermost surface of the second molding member and extending from the electrical connection pad,

wherein the electrical connection pattern is connected to the redistribution pad by an electrical connection via that extends through the second molding member, and

wherein the electrical connection pad is offset from the redistribution pad.

7. The semiconductor package of claim 1 , wherein the second redistribution layer includes a plurality of second redistribution layers spaced apart from each other,

wherein a bypass wiring layer is on a same level as the electrical connection pad and electrically connects the plurality of second redistribution layers to each other, and

wherein the bypass wiring layer is spaced apart from the electrical connection pad.

8. The semiconductor package of claim 7 , wherein the passivation layer is on an upper surface of the bypass wiring layer.

9. The semiconductor package of claim 1 , further comprising:

an electrical connection via formed below the electrical connection pad in a cross-sectional view of the semiconductor package in which the redistribution substrate serves as a base reference plane and electrically connecting the electrical connection pad and the redistribution pad to each other through the second molding member,

wherein the conductor layer includes a body layer extending on the second molding member in a vertical direction in the cross-sectional view, and a via body layer extending through the second molding member and toward the redistribution pad.

10. The semiconductor package of claim 9 , wherein the conductor layer includes a lower metal layer, including copper, and an upper metal layer on the lower metal layer and including nickel.

11. The semiconductor package of claim 9 , comprising:

a seed layer extending continuously along a lower surface of the conductor layer.

12. The semiconductor package of claim 11 , wherein the seed layer includes a lower seed layer, including titanium, and an upper seed layer on the lower seed layer and including copper.

13. The semiconductor package of claim 1 , wherein the vertical connection structure includes a first insulating layer in physical contact with the redistribution substrate, a first wiring layer in physical contact with the redistribution substrate and embedded in the first insulating layer, a second wiring layer on a side opposing a side of the first insulating layer in which the first wiring layer is embedded, a second insulating layer on the first insulating layer and the second wiring layer, and a third wiring layer on a side opposing a side of the second insulating layer in which the second wiring layer is embedded, and

wherein the first, second, and third wiring layers are electrically connected to the first redistribution layer.

14. A semiconductor package comprising:

a redistribution substrate including a first redistribution layer;

a semiconductor chip on the redistribution substrate;

a first molding member on the redistribution substrate and the semiconductor chip;

a second redistribution layer on the first molding member and including a redistribution pad;

a vertical connection structure on the redistribution substrate and electrically connecting the first redistribution layer and the second redistribution layer to each other;

a second molding member directly on the first molding member and on at least a portion of the second redistribution layer, such that the portion of the second redistribution layer is between the second molding member and the redistribution substrate; and

an electrical connection structure on the second molding member and electrically connected to the redistribution pad,

wherein the electrical connection structure includes a conductor layer, including nickel (Ni), and a contact layer on an upper surface of the conductor layer and including gold (Au), and

wherein the redistribution pad includes copper (Cu).

15. The semiconductor package of claim 14 , wherein the electrical connection structure has a pad portion, protruding from an uppermost surface of the second molding member, and a via portion in physical contact with the redistribution pad through the second molding member.

16. The semiconductor package of claim 15 , wherein the pad portion of the electrical connection structure has a width greater than a width of the redistribution pad.

17. A semiconductor package comprising:

a redistribution substrate including a first redistribution layer;

a semiconductor chip on the redistribution substrate and electrically connected to the first redistribution layer;

a first molding member on the redistribution substrate and directly on at least an upper surface of the semiconductor chip, such that the semiconductor chip is between the first molding member and the redistribution substrate;

a plurality of vertical connection structures embedded in the first molding member and electrically connected to the first redistribution layer;

a second molding member including a base molding layer on an upper surface of the first molding member, and a build-up molding layer on an upper surface of the base molding layer;

a second redistribution layer on the upper surface of the base molding layer and including a plurality of redistribution pads and a plurality of redistribution patterns electrically connecting the plurality of redistribution pads and the plurality of vertical connection structures to each other; and

a plurality of electrical connection structures on the second molding member and having a pad portion, protruding from the upper surface of the build-up molding layer, and a via portion in physical contact with at least one of the plurality of redistribution pads through the build-up molding layer,

wherein the plurality of electrical connection structures include a conductor layer, including nickel (Ni), and a contact layer on an upper surface of the conductor layer and including gold (Au),

wherein the plurality of redistribution pads include a first backside redistribution pad and a second backside redistribution pad adjacent to each other,

wherein the plurality of electrical connection structures include a first backside electrical connection structure and a second backside electrical connection structure corresponding to the first backside redistribution pad and the second backside redistribution pad, respectively, and

wherein the plurality of redistribution patterns extend between the first backside redistribution pad and the second backside redistribution pad, and at least a portion of the plurality of redistribution patterns vertically overlaps at least one of the first backside electrical connection structure and the second backside electrical connection structure in a cross-sectional view of the semiconductor package in which the redistribution substrate serves as a base reference plane.

18. The semiconductor package of claim 17 , wherein the plurality of vertical connection structures border the semiconductor chip on the redistribution substrate, and

wherein the plurality of electrical connection structures are in a region bordered by the plurality of vertical connection structures.

19. The semiconductor package of claim 18 , wherein the plurality of electrical connection structures are outside of a central portion of the region bordered by the plurality of vertical connection structures.